Abstract:
A system for providing a threshold voltage (VT) includes a VT extractor that extracts the VT for a MOS transistor relative to a first voltage rail. An inversion circuit inverts the extracted VT (e.g., VT+VIN) relative to a reference voltage that is intermediate the first voltage rail and a second voltage rail and provides an output corresponding to the VT (e.g., VT+VIN) relative to the second voltage rail. The relative voltages at the voltage rails generally will depend on whether the VT is being extracted for a p-channel MOS transistor or an n-channel MOS transistor. The VT can be employed to generate a ramp voltage across a capacitor formed of another MOS transistor.
Abstract translation:用于提供阈值电压(V SUB T)的系统包括提取MOS晶体管相对于第一电压的V SUB T提取器的V SUB提取器 电压轨。 反相电路相对于在第一电压轨之间的参考电压使提取的V SUB(例如,V SUB T + V IN IN)反相 和第二电压轨,并且相对于第二电压轨提供对应于V SUB(例如,V IN T + V IN IN IN)的输出 。 电压轨上的相对电压通常取决于是否为p沟道MOS晶体管或n沟道MOS晶体管提取V SUB。 可以采用V SUB来产生由另一MOS晶体管形成的电容器两端的斜坡电压。
Abstract:
A circuit and method for reducing the variation of a reference voltage as a function of resistivity ρ in a current-mode bandgap reference circuit generating a reference current that is applied to an output resistor to generate the reference voltage. According to the invention, a substantially constant current is generated and added to the reference current.