Micro-cantilever type probe card
    1.
    发明授权
    Micro-cantilever type probe card 有权
    微型悬臂式探头卡

    公开(公告)号:US06956386B2

    公开(公告)日:2005-10-18

    申请号:US10633022

    申请日:2003-08-01

    IPC分类号: G01R1/067 G01R1/073 G01R31/02

    CPC分类号: G01R1/07342 G01R1/06733

    摘要: A probe card has probe sections with silicon probes formed on an insulated circuit board that are connected by an adhesive on the supporting structures. The supporting structures are supported by fixing structures with each of the fixing structures being fixed on the circuit board. The probe card has the probe section's wiring and the circuit board's wiring being electrically connected by a metallic wiring and the sub printed circuit and the pogo pin electrically connected by an anisotropic conducting film with the sub printed circuit board and the pogo pin. A metallic layer is formed by the plating of the probe in the probe section. This reduces the manufacturing costs by enabling the damaged probes during manufacturing to be discarded and the others being used continually.

    摘要翻译: 探针卡具有探针部分,其中硅探针形成在绝缘电路板上,其通过粘合剂连接在支撑结构上。 支撑结构由固定结构支撑,每个固定结构固定在电路板上。 探针卡具有探针部分的布线,电路板的布线通过金属布线和副印刷电路电连接,弹簧针通过各向异性导电膜与副印刷电路板和弹簧针电连接。 通过探针在探针部中的电镀而形成金属层。 这可以通过在制造过程中使损坏的探头被丢弃而其他的被不断使用来降低制造成本。

    Micro cantilever style contact pin structure for wafer probing
    2.
    发明授权
    Micro cantilever style contact pin structure for wafer probing 失效
    微悬臂式接触针结构用于晶圆探测

    公开(公告)号:US06414501B2

    公开(公告)日:2002-07-02

    申请号:US09965607

    申请日:2001-09-27

    IPC分类号: G01R3102

    摘要: The present invention is to provide a micro cantilever-type probe disposed on a probe card, having such appropriate elasticity and mechanical strength that the probe would recover its unforced shape after deformation during an inspection and maintain its original shape even after three hundred thousand uses. The present invention provides a probe card which has an electrically insulated substrate fixed on a circuit board; a plurality of elastic probes with a sharpened end fixed on the insulated substrate; and wiring formed on the probe, the insulated substrate and the circuit board. The inventive probe is manufactured by patterning a substrate using photolithography and etching a portion except a pattern-defined portion. The probe is coated by metal layer(s).

    摘要翻译: 本发明提供一种设置在探针卡上的微型悬臂式探头,其具有适当的弹性和机械强度,使得探针在检查过程中变形后能够恢复其非强制形状,并且即使在三十万次使用后也保持其原始形状。 本发明提供了一种探针卡,其具有固定在电路板上的电绝缘基板; 多个具有固定在所述绝缘基板上的尖端的弹性探针; 以及形成在探针,绝缘基板和电路板上的布线。 本发明的探针通过使用光刻图案化衬底并蚀刻除了图案限定部分之外的部分来制造。 探针被金属层涂覆。

    Method for fabricating stacked capacitors of semiconductor device
    3.
    发明授权
    Method for fabricating stacked capacitors of semiconductor device 失效
    制造半导体器件叠层电容器的方法

    公开(公告)号:US5658817A

    公开(公告)日:1997-08-19

    申请号:US587791

    申请日:1995-12-26

    申请人: Ha Poong Jeong

    发明人: Ha Poong Jeong

    CPC分类号: H01L27/10852

    摘要: A method for fabricating capacitors of a semiconductor device capable of forming a capacitor structure providing a higher capacitance than the conventional pin-shaped structure. The method includes forming a lower insulating layer over a semiconductor substrate, forming a contact hole in the lower insulating layer, forming a first conduction layer over the resulting structure, etching the first conduction layer and the lower insulating layer at a desired region to a desired depth of the lower insulating layer, thereby forming a groove, sequentially forming a second conduction layer and a sacrificial film over the resulting structure, anisotropically etching the sacrificial film by use of said contact mask at a region where it fills the contact hole, forming a third conduction layer over the resulting structure, anisotropically etching the third conduction layer, the sacrificial film and the second conduction layer at a region where they fill the groove, forming, on side walls of the groove, spacers comprised of the portions of the second conduction layer left on the side walls of the groove, respectively, and removing the sacrificial film, thereby forming storage electrodes having an increased surface area.

    摘要翻译: 一种用于制造能够形成比传统的pin形结构提供更高电容的电容器结构的半导体器件的电容器的方法。 该方法包括在半导体衬底上形成下绝缘层,在下绝缘层中形成接触孔,在所得结构上形成第一导电层,在所需区域刻蚀第一导电层和下绝缘层至所需的区域 下部绝缘层的深度,由此形成沟槽,在所得结构上依次形成第二导电层和牺牲膜,通过使用所述接触掩模在其填充接触孔的区域各向异性地蚀刻牺牲膜,形成 在所得结构上的第三导电层,各向异性地蚀刻第三导电层,牺牲膜和第二导电层,在它们填充沟槽的区域,在沟槽的侧壁上形成由第二导电部分 分别留在槽的侧壁上,并且去除牺牲膜,从而形成储存 老化电极具有增加的表面积。