公开(公告)号：US20110198667A1

公开(公告)日：2011-08-18

申请号：US12940399

申请日：2010-11-05

申请人： Dong Ju LEE ,  Hyun Wook Shim ,  Heon Ho Lee ,  Young Sun Kim ,  Sung Tae Kim

发明人： Dong Ju LEE ,  Hyun Wook Shim ,  Heon Ho Lee ,  Young Sun Kim ,  Sung Tae Kim

IPC分类号： H01L33/30 ,  H01L33/00 ,  H01L33/02

CPC分类号： C23C16/54 ,  C23C16/45563 ,  C30B23/02 ,  C30B25/14 ,  C30B29/40 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

摘要： There are provided a vapor deposition system, a method of manufacturing a light emitting device, and a light emitting device. A vapor deposition system according to an aspect of the invention may include: a first chamber having a first susceptor and at least one gas distributor discharging a gas in a direction parallel to a substrate disposed on the first susceptor; and a second chamber having a second susceptor and at least one second gas distributor arranged above the second susceptor to discharge a gas downwards.When a vapor deposition system according to an aspect of the invention is used, a semiconductor layer being thereby grown has excellent crystalline quality, thereby improving the performance of a light emitting device. Furthermore, while the operational capability and productivity of the vapor deposition system are improved, deterioration in an apparatus can be prevented.

摘要翻译： 提供了蒸镀系统，制造发光器件的方法和发光器件。 根据本发明的一个方面的气相沉积系统可以包括：具有第一基座和至少一个气体分布器的第一腔室，其沿平行于设置在第一基座上的衬底的方向排放气体; 以及第二室，具有第二基座和布置在第二基座上方的至少一个第二气体分配器，以向下排放气体。 当使用根据本发明的一个方面的气相沉积系统时，由此生长的半导体层具有优异的结晶质量，从而提高了发光器件的性能。 此外，虽然改善了气相沉积系统的操作能力和生产率，但是可以防止装置的劣化。

公开(公告)号：US20120326121A1

公开(公告)日：2012-12-27

申请号：US13603192

申请日：2012-09-04

申请人： Dong Ju LEE ,  Hyun Wook Shim ,  Heon Ho Lee ,  Young Sun Kim ,  Sung Tae Kim

发明人： Dong Ju LEE ,  Hyun Wook Shim ,  Heon Ho Lee ,  Young Sun Kim ,  Sung Tae Kim

IPC分类号： H01L33/04

CPC分类号： C23C16/54 ,  C23C16/45563 ,  C30B23/02 ,  C30B25/14 ,  C30B29/40 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

摘要： There are provided a vapor deposition system, a method of manufacturing a light emitting device, and a light emitting device. A vapor deposition system according to an aspect of the invention may include: a first chamber having a first susceptor and at least one gas distributor discharging a gas in a direction parallel to a substrate disposed on the first susceptor; and a second chamber having a second susceptor and at least one second gas distributor arranged above the second susceptor to discharge a gas downwards.When a vapor deposition system according to an aspect of the invention is used, a semiconductor layer being thereby grown has excellent crystalline quality, thereby improving the performance of a light emitting device. Furthermore, while the operational capability and productivity of the vapor deposition system are improved, deterioration in an apparatus can be prevented.

摘要翻译： 提供了蒸镀系统，制造发光器件的方法和发光器件。 根据本发明的一个方面的气相沉积系统可以包括：具有第一基座和至少一个气体分布器的第一腔室，其沿平行于设置在第一基座上的衬底的方向排放气体; 以及第二室，具有第二基座和布置在第二基座上方的至少一个第二气体分配器，以向下排放气体。 当使用根据本发明的一个方面的气相沉积系统时，由此生长的半导体层具有优异的结晶质量，从而提高了发光器件的性能。 此外，虽然改善了气相沉积系统的操作能力和生产率，但是可以防止装置的劣化。

公开(公告)号：US20120168769A1

公开(公告)日：2012-07-05

申请号：US13344298

申请日：2012-01-05

申请人： Dong Ju LEE ,  Heon Ho LEE ,  Hyun Wook SHIM ,  Young Sun KIM

发明人： Dong Ju LEE ,  Heon Ho LEE ,  Hyun Wook SHIM ,  Young Sun KIM

IPC分类号： H01L33/02

CPC分类号： H01L33/0075 ,  H01L33/007 ,  H01L33/32

摘要： There is provided a method of manufacturing a light emitting diode and a light emitting diode manufactured by the same. The method includes growing a first conductivity type nitride semiconductor layer and an undoped nitride semiconductor layer on a substrate sequentially in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer grown thereon to a second reaction chamber; growing an additional first conductivity type nitride semiconductor layer on the undoped nitride semiconductor layer in the second reaction chamber; growing an active layer on the additional first conductivity type nitride semiconductor layer; and growing a second conductivity type nitride semiconductor layer on the active layer.

摘要翻译： 提供了一种制造发光二极管的方法和由其制造的发光二极管。 该方法包括在第一反应室中顺序地在衬底上生长第一导电型氮化物半导体层和未掺杂的氮化物半导体层; 将具有第一导电型氮化物半导体层和其上生长的未掺杂氮化物半导体层的衬底转移到第二反应室; 在第二反应室中的未掺杂的氮化物半导体层上生长附加的第一导电型氮化物半导体层; 在附加的第一导电型氮化物半导体层上生长活性层; 以及在所述有源层上生长第二导电型氮化物半导体层。

公开(公告)号：US20110121259A1

公开(公告)日：2011-05-26

申请号：US12902233

申请日：2010-10-12

申请人： Sang Heon HAN ,  Joo Young CHEON ,  Je Won KIM ,  Dong Ju LEE ,  Dong Chul SHIN ,  Hyun Wook SHIM ,  Jae Woong HAN

发明人： Sang Heon HAN ,  Joo Young CHEON ,  Je Won KIM ,  Dong Ju LEE ,  Dong Chul SHIN ,  Hyun Wook SHIM ,  Jae Woong HAN

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  H01L33/32

摘要： There is provided a nitride semiconductor light emitting device including an active layer having enhanced external quantum efficiency at both low and high current density. The nitride semiconductor light emitting device includes a first conductivity type nitride semiconductor layer; an active layer disposed on the first conductivity type nitride semiconductor layer and having a plurality of quantum well layers and at least one quantum barrier layer alternately arranged; and a second conductivity type nitride semiconductor layer disposed on the active layer. The plurality of quantum well layers disposed adjacent to each other include first and second quantum well layers having different thicknesses.

摘要翻译： 提供一种氮化物半导体发光器件，其包括在低电流和高电流密度下具有增强的外部量子效率的有源层。 氮化物半导体发光器件包括第一导电型氮化物半导体层; 设置在所述第一导电型氮化物半导体层上并具有交替布置的多个量子阱层和至少一个量子势垒层的有源层; 以及设置在有源层上的第二导电型氮化物半导体层。 彼此相邻布置的多个量子阱层包括具有不同厚度的第一和第二量子阱层。