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    Phase change memory device and method of fabricating the same
    2.
    发明授权
    Phase change memory device and method of fabricating the same 有权
    相变存储器件及其制造方法

    公开(公告)号：US07767568B2

    公开(公告)日：2010-08-03

    申请号：US11905244

    申请日：2007-09-28

    申请人： Hyeong-Geun An ,  Hideki Horii ,  Jong-Chan Shin ,  Dong-Ho Ahn ,  Jun-Soo Bae ,  Jeong-Hee Park

    发明人： Hyeong-Geun An ,  Hideki Horii ,  Jong-Chan Shin ,  Dong-Ho Ahn ,  Jun-Soo Bae ,  Jeong-Hee Park

    IPC分类号： H01L21/3205

    CPC分类号： H01L27/2463 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1683

    摘要： A phase change memory device and method of manufacturing the same is provided. A first electrode having a first surface is provided on a substrate. A second electrode having a second surface at a different level from the first surface is on the substrate. The second electrode may be spaced apart from the first electrode. A third electrode may be formed corresponding to the first electrode. A fourth electrode may be formed corresponding to the second electrode. A first phase change pattern may be interposed between the first surface and the third electrode. A second phase change pattern may be interposed between the second surface and the fourth electrode. Upper surfaces of the first and second phase change patterns may be on the same plane.

    摘要翻译： 提供了一种相变存储器件及其制造方法。 具有第一表面的第一电极设置在基板上。 具有与第一表面不同的第二表面的第二电极在基板上。 第二电极可以与第一电极间隔开。 可以对应于第一电极形成第三电极。 可以对应于第二电极形成第四电极。 可以在第一表面和第三电极之间插入第一相变图案。 可以在第二表面和第四电极之间插入第二相变图案。 第一和第二相变图案的上表面可以在同一平面上。

    Phase change memory devices including memory cells having different phase change materials and related methods and systems
    4.
    发明授权
    Phase change memory devices including memory cells having different phase change materials and related methods and systems 有权
    相变存储器件包括具有不同相变材料的存储单元以及相关的方法和系统

    公开(公告)号：US07558100B2

    公开(公告)日：2009-07-07

    申请号：US11881062

    申请日：2007-07-25

    申请人： Dong-Ho Ahn ,  Hideki Horii ,  Jun-Soo Bae

    发明人： Dong-Ho Ahn ,  Hideki Horii ,  Jun-Soo Bae

    IPC分类号： G11C11/00

    CPC分类号： G11C11/5678 ,  G11C7/04 ,  G11C13/0004 ,  G11C2213/79 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/148

    摘要： A phase change memory device may include an integrated circuit substrate and first and second phase change memory elements on the integrated circuit substrate. The first phase change memory element may include a first phase change material having a first crystallization temperature. The second phase change memory element may include a second phase change material having a second crystallization temperature. Moreover, the first and second crystallization temperatures may be different so that the first and second phase change memory elements are programmable at different temperatures. Related methods and systems are also discussed.

    摘要翻译： 相变存储器件可以包括集成电路衬底以及集成电路衬底上的第一和第二相变存储元件。 第一相变存储元件可以包括具有第一结晶温度的第一相变材料。 第二相变存储元件可以包括具有第二结晶温度的第二相变材料。 此外，第一和第二结晶温度可以不同，使得第一和第二相变存储元件可在不同温度下编程。 还讨论了相关方法和系统。

    Phase change memory devices including memory cells having different phase change materials and related methods and systems
    6.
    发明申请
    Phase change memory devices including memory cells having different phase change materials and related methods and systems 有权
    相变存储器件包括具有不同相变材料的存储单元以及相关的方法和系统

    公开(公告)号：US20080068879A1

    公开(公告)日：2008-03-20

    申请号：US11881062

    申请日：2007-07-25

    申请人： Dong-Ho Ahn ,  Hideki Horii ,  Jun-Soo Bae

    发明人： Dong-Ho Ahn ,  Hideki Horii ,  Jun-Soo Bae

    IPC分类号： G11C11/00 ,  H01L45/00

    CPC分类号： G11C11/5678 ,  G11C7/04 ,  G11C13/0004 ,  G11C2213/79 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/148

    摘要： A phase change memory device may include an integrated circuit substrate and first and second phase change memory elements on the integrated circuit substrate. The first phase change memory element may include a first phase change material having a first crystallization temperature. The second phase change memory element may include a second phase change material having a second crystallization temperature. Moreover, the first and second crystallization temperatures may be different so that the first and second phase change memory elements are programmable at different temperatures. Related methods and systems are also discussed.

    摘要翻译： 相变存储器件可以包括集成电路衬底以及集成电路衬底上的第一和第二相变存储元件。 第一相变存储元件可以包括具有第一结晶温度的第一相变材料。 第二相变存储元件可以包括具有第二结晶温度的第二相变材料。 此外，第一和第二结晶温度可以不同，使得第一和第二相变存储元件可在不同温度下编程。 还讨论了相关方法和系统。

    Resistance variable memory device and programming method thereof
    8.
    发明申请
    Resistance variable memory device and programming method thereof 有权
    电阻变量存储器件及其编程方法

    公开(公告)号：US20090052235A1

    公开(公告)日：2009-02-26

    申请号：US12228914

    申请日：2008-08-18

    申请人： Hideki Horii ,  Jun-Soo Bae

    发明人： Hideki Horii ,  Jun-Soo Bae

    IPC分类号： G11C11/00 ,  G11C7/00

    CPC分类号： G11C13/0069 ,  G11C11/5678 ,  G11C13/0004 ,  G11C2013/0078 ,  G11C2013/0092

    摘要： Provided is a method of programming a resistance variable memory device. The resistance variable memory device includes a memory cell having multi states and a write driver outputting a program pulse for programming the memory cell into one of the multi states. The method of programming the resistance variable memory device includes applying a first program pulse to the resistance variable memory device and applying a second program pulse to a memory cell when the memory cell is programmed into an intermediate state. When the first program pulse is a reset pulse, the reset pulse is an over program pulse, that is, an over reset pulse. Therefore, the resistance variable memory device can secure a sufficient read margin as well as improve a resistance drift margin.

    摘要翻译： 提供了一种编程电阻变量存储器件的方法。 电阻可变存储器件包括具有多态的存储器单元和写入驱动器，其输出用于将存储器单元编程为多态的其中一个状态的编程脉冲。 编程电阻可变存储器件的方法包括：当存储器单元被编程到中间状态时，将第一编程脉冲施加到电阻可变存储器件并向存储器单元施加第二编程脉冲。 当第一个编程脉冲是复位脉冲时，复位脉冲是过程编程脉冲，即过复位脉冲。 因此，电阻可变存储器件可以确保足够的读取余量以及改善电阻漂移裕度。

    Phase changeable structure and method of forming the same
    9.
    发明授权
    Phase changeable structure and method of forming the same 有权
    相变结构及其形成方法

    公开(公告)号：US07569430B2

    公开(公告)日：2009-08-04

    申请号：US11674580

    申请日：2007-02-13

    申请人： Jun-Soo Bae ,  Hideki Horii ,  Ji-Hye Yi ,  Young-Soo Lim

    发明人： Jun-Soo Bae ,  Hideki Horii ,  Ji-Hye Yi ,  Young-Soo Lim

    IPC分类号： H01L21/82

    CPC分类号： H01L45/1675 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144

    摘要： The present invention relates to a phase changeable structure having decreased amounts of defects and a method of forming the phase changeable structure. A stacked composite is first formed by (i) forming a phase changeable layer including a chalcogenide is formed on a lower electrode, (ii) forming an etch stop layer having a first etch rate with respect to a first etching material including chlorine on the phase changeable layer, and (iii) forming a conductive layer having a second etch rate with respect to the first etching material on the etch stop layer. The conductive layer of the stacked composite is then etched using the first etching material to form an upper electrode. The etch stop layer and the phase changeable layer are then etched using a second etching material that is substantially flee of chlorine to form an etch stop pattern and a phase changeable pattern, respectively.

    摘要翻译： 本发明涉及具有减少的缺陷量的相变结构和形成相变结构的方法。 首先通过（i）在下电极上形成包括硫族化物的相变层来形成堆叠复合体，（ii）形成相对于在相上包括氯的第一蚀刻材料具有第一蚀刻速率的蚀刻停止层 可变层，和（iii）形成相对于蚀刻停止层上的第一蚀刻材料具有第二蚀刻速率的导电层。 然后使用第一蚀刻材料蚀刻层叠复合体的导电层以形成上电极。 然后使用基本上不含氯的第二蚀刻材料来蚀刻蚀刻停止层和相变层，以分别形成蚀刻停止图案和相变图案。

    Resistance variable memory device and operating method thereof
    10.
    发明授权
    Resistance variable memory device and operating method thereof 有权
    电阻变量存储器件及其操作方法

    公开(公告)号：US07787278B2

    公开(公告)日：2010-08-31

    申请号：US12229341

    申请日：2008-08-22

    申请人： Jun-Soo Bae ,  Hideki Horii ,  Mi-Lim Park

    发明人： Jun-Soo Bae ,  Hideki Horii ,  Mi-Lim Park

    IPC分类号： G11C17/00

    CPC分类号： G11C11/56 ,  G11C11/5678 ,  G11C13/0004

    摘要： Provided is a resistance variable memory device and a method for operating same. The resistance variable memory device has a phase change material between a top electrode and a bottom electrode. In the method for operating a resistance variable memory, the write current is applied in a direction from the top electrode to the bottom electrode, and the read current is applied in a direction from the bottom electrode to the top electrode. The phase change material is programmed by applying the write current, and a resistance drift of the phase change material is restrained by applying the read current.

    摘要翻译： 提供一种电阻变量存储装置及其操作方法。 电阻可变存储器件在顶部电极和底部电极之间具有相变材料。 在用于操作电阻可变存储器的方法中，写入电流沿从顶部电极到底部电极的方向施加，并且读取电流沿着从底部电极到顶部电极的方向施加。 通过施加写入电流来编程相变材料，并且通过施加读取电流来抑制相变材料的电阻漂移。