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公开(公告)号：US09373664B2
公开(公告)日：2016-06-21
申请号：US14682506
申请日：2015-04-09
申请人： Dong-Jun Seong , Youn-Seon Kang , Seung-Jae Jung , Jung-Dal Choi
发明人： Dong-Jun Seong , Youn-Seon Kang , Seung-Jae Jung , Jung-Dal Choi
CPC分类号： H01L27/2463 , H01L27/2409 , H01L27/2481 , H01L45/06 , H01L45/08 , H01L45/1233 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/1675
摘要： A variable resistance memory device, and methods of manufacturing the same, include a plurality of first conductive structures extending in a first direction, a plurality of second conductive structures extending in a second direction crossing the first direction over the first conductive structures, the second conductive structures, and a plurality of memory cells that are formed at intersections at which the first conductive structures and the second conductive structures overlap each other, and each includes a selection element and a variable resistance element sequentially stacked. An upper surface of each of the first conductive structures has a width in the second direction less than a width of a bottom surface of each of the selection elements.
摘要翻译： 可变电阻存储器件及其制造方法包括沿第一方向延伸的多个第一导电结构，沿与第一导电结构相交的第一方向的第二方向延伸的多个第二导电结构，第二导电 结构和形成在第一导电结构和第二导电结构彼此重叠的交点处的多个存储单元，并且每个存储单元包括依次堆叠的选择元件和可变电阻元件。 每个第一导电结构的上表面在第二方向上的宽度小于每个选择元件的底表面的宽度。
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公开(公告)号：US09640586B2
公开(公告)日：2017-05-02
申请号：US14620944
申请日：2015-02-12
申请人： Dong-Jun Seong , Youn-Seon Kang
发明人： Dong-Jun Seong , Youn-Seon Kang
CPC分类号： H01L27/2409 , H01L27/224 , H01L27/2418 , H01L27/2463 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/141 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/16 , H01L45/1683
摘要： A semiconductor diode includes a first semiconductor pattern including a first impurity, a first diffusion barrier pattern on the first semiconductor pattern, an intrinsic semiconductor pattern on the first diffusion barrier pattern, a second diffusion barrier pattern on the intrinsic semiconductor pattern, and a second semiconductor pattern including a second impurity on the second diffusion barrier pattern.
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公开(公告)号：US08754391B2
公开(公告)日：2014-06-17
申请号：US13366875
申请日：2012-02-06
申请人： Dong-Jun Seong , Chan-Jin Park
发明人： Dong-Jun Seong , Chan-Jin Park
CPC分类号： H01L45/04 , H01L27/249 , H01L45/12 , H01L45/1226 , H01L45/146
摘要： Nonvolatile memory devices including a first interlayer insulating film and a second interlayer insulating film separated from each other and are stacked sequentially, a first electrode penetrating the first interlayer insulating film and the second interlayer insulating film, a resistance change film along a top surface of the first interlayer insulating film, side surfaces of the first electrode, and a bottom surface of the second interlayer insulating film, and a second electrode between the first interlayer insulating film and the second interlayer insulating film.
摘要翻译： 非易失性存储器件包括彼此分离并依次层叠的第一层间绝缘膜和第二层间绝缘膜，穿过第一层间绝缘膜和第二层间绝缘膜的第一电极，沿着第一层间绝缘膜的顶表面的电阻变化膜 第一层间绝缘膜，第一电极的侧表面和第二层间绝缘膜的底表面以及第一层间绝缘膜和第二层间绝缘膜之间的第二电极。
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公开(公告)号：US20120286226A1
公开(公告)日：2012-11-15
申请号：US13366875
申请日：2012-02-06
申请人： Dong-Jun Seong , Chan-Jin Park
发明人： Dong-Jun Seong , Chan-Jin Park
IPC分类号： H01L45/00
CPC分类号： H01L45/04 , H01L27/249 , H01L45/12 , H01L45/1226 , H01L45/146
摘要： Nonvolatile memory devices including a first interlayer insulating film and a second interlayer insulating film separated from each other and are stacked sequentially, a first electrode penetrating the first interlayer insulating film and the second interlayer insulating film, a resistance change film along a top surface of the first interlayer insulating film, side surfaces of the first electrode, and a bottom surface of the second interlayer insulating film, and a second electrode between the first interlayer insulating film and the second interlayer insulating film.
摘要翻译： 非易失性存储器件包括彼此分离并依次层叠的第一层间绝缘膜和第二层间绝缘膜，穿过第一层间绝缘膜和第二层间绝缘膜的第一电极，沿着第一层间绝缘膜的顶表面的电阻变化膜 第一层间绝缘膜，第一电极的侧表面和第二层间绝缘膜的底表面以及第一层间绝缘膜和第二层间绝缘膜之间的第二电极。
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