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51 条记录 (耗时 0.03 秒)

    Piezoelectric microspeaker and method of fabricating the same
    3.
    发明授权
    Piezoelectric microspeaker and method of fabricating the same 有权
    压电式微型扬声器及其制造方法

    公开(公告)号：US09049522B2

    公开(公告)日：2015-06-02

    申请号：US13169408

    申请日：2011-06-27

    申请人： Joo-Ho Lee ,  Dong-Kyun Kim ,  Sang-Hun Lee ,  Seok-Whan Chung

    发明人： Joo-Ho Lee ,  Dong-Kyun Kim ,  Sang-Hun Lee ,  Seok-Whan Chung

    IPC分类号： H04R25/00 ,  H04R17/00

    CPC分类号： H04R17/005 ,  H04R2201/003

    摘要： A piezoelectric microspeaker and a method of fabricating the same are provided. The piezoelectric microspeaker includes a substrate having a through hole therein; a diaphragm disposed on the substrate and covering the through hole; and a plurality of piezoelectric actuators including a piezoelectric member, a first electrode, and a second electrode, wherein the first and second electrodes are configured to induce an electric field in the piezoelectric member. The piezoelectric actuators include a central actuator, which is disposed on a central portion of the diaphragm and a plurality of edge actuators, which are disposed a predetermined distance apart from the central actuator and are formed on a plurality of edge portions of the diaphragm.

    摘要翻译： 提供一种压电微型扬声器及其制造方法。 压电式微型扬声器包括其中具有通孔的基板; 设置在所述基板上并覆盖所述通孔的隔膜; 以及包括压电元件，第一电极和第二电极的多个压电致动器，其中第一和第二电极构造成在压电元件中感应电场。 压电致动器包括设置在隔膜的中心部分上的中央致动器和多个边缘致动器，它们与中心致动器隔开预定距离设置并形成在隔膜的多个边缘部分上。

    Semiconductor integrated circuit and method of operating the same
    5.
    发明授权
    Semiconductor integrated circuit and method of operating the same 有权
    半导体集成电路及其操作方法

    公开(公告)号：US08629697B2

    公开(公告)日：2014-01-14

    申请号：US13486837

    申请日：2012-06-01

    申请人： Dong-Kyun Kim

    发明人： Dong-Kyun Kim

    IPC分类号： H03B1/00 ,  H03K3/00

    CPC分类号： G11C5/147

    摘要： Provided is a semiconductor integrated circuit including an internal voltage generator for generating an internal voltage. A semiconductor integrated circuit includes a dividing unit, a comparing unit, a driving unit, and a voltage level controlling unit. The dividing unit divides an internal voltage in a predetermined division ratio to output a feedback voltage. The comparing unit compares a feedback voltage with a reference voltage. The driving unit drives an internal voltage terminal in response to an output signal of the comparing unit. The voltage level controlling unit controls a voltage level of the output signal of the comparing unit in response to a first control signal that is activated at a predetermined time before an operation time point of an internal circuit using an internal voltage.

    摘要翻译： 提供了一种包括用于产生内部电压的内部电压发生器的半导体集成电路。 半导体集成电路包括分割单元，比较单元，驱动单元和电压电平控制单元。 分割单元以预定的分频比除以内部电压以输出反馈电压。 比较单元将反馈电压与参考电压进行比较。 驱动单元响应于比较单元的输出信号来驱动内部电压端子。 电压电平控制单元响应于在使用内部电压的内部电路的操作时间点之前的预定时间被激活的第一控制信号来控制比较单元的输出信号的电压电平。

    Semiconductor memory device
    9.
    发明申请
    Semiconductor memory device 审中-公开
    半导体存储器件

    公开(公告)号：US20080244157A1

    公开(公告)日：2008-10-02

    申请号：US12000028

    申请日：2007-12-07

    申请人： Dong-Kyun Kim

    发明人： Dong-Kyun Kim

    IPC分类号： G06F12/00

    CPC分类号： G11C29/20 ,  G11C2029/3602

    摘要： A semiconductor memory device includes: a memory core region; a data transfer unit configured to transfer external data to the memory core region; a data code storage unit configured to store test data; and a data selection unit configured to select one of the test data from the data code storage unit and the data from the data transfer unit and output the selected data to the memory core region.

    摘要翻译： 半导体存储器件包括：存储器芯区域; 数据传送单元，被配置为将外部数据传送到存储器核心区域; 配置为存储测试数据的数据代码存储单元; 以及数据选择单元，被配置为从数据代码存储单元选择测试数据中的一个和来自数据传送单元的数据，并将所选择的数据输出到存储器核心区域。

    Device for controlling internal voltage
    10.
    发明授权
    Device for controlling internal voltage 有权
    用于控制内部电压的装置

    公开(公告)号：US07420407B2

    公开(公告)日：2008-09-02

    申请号：US11520560

    申请日：2006-09-14

    申请人： Dong-Kyun Kim

    发明人： Dong-Kyun Kim

    IPC分类号： H01H37/76

    CPC分类号： G11C5/14

    摘要： A device controls internal voltage. Increased reliability of a semiconductor memory device is obtained by increasing or decreasing a level of internal reference voltage according to change of the device. Fuse ROMs generate fuse signals having different levels according to a cutting condition of each fuse. A bit counter performs up/down counting operation in response to a count control signal after setting the fuse signals to initial values in response to a set signal and generates counter output signals which are higher or lower than the initial values by a counting number. A decoder decodes the counter output signals and activates one of switching signals. A reference voltage selector provides a trimming level of internal reference voltage in response to the switching signals and generating reference voltage.

    摘要翻译： 器件控制内部电压。 通过根据器件的变化增加或减少内部参考电压的电平，可获得半导体存储器件的可靠性提高。 保险丝根据每个保险丝的切割条件产生具有不同电平的熔丝信号。 响应于设置信号将熔丝信号设置为初始值，位计数器响应于计数控制信号执行上/下计数操作，并产生比初始值高或低计数数的计数器输出信号。 解码器解码计数器输出信号并激活切换信号之一。 参考电压选择器响应于开关信号提供内部参考电压的微调电平并产生参考电压。