摘要:
Provided are a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same. The CMOS device comprises an epi-layer that may be formed on a substrate; a first semiconductor layer and a second semiconductor layer that may be formed on different regions of the epi-layer, respectively; and a PMOS transistor and a NMOS transistor that may be formed on the first and second semiconductor layers, respectively.
摘要:
A method of forming a nanowire and a semiconductor device comprising the nanowire are provided. The method of forming a nanowire includes forming a patterned SiyGe1-y layer (where, y is a real number that satisfies 0≦y
摘要翻译:提供了形成纳米线的方法和包括纳米线的半导体器件。 形成纳米线的方法包括在基底层上形成图案化的Si y Ga 1- y层(其中,y是满足0&lt; nlE; y <1的实数),以及在第一氧化物内形成第一氧化物层和至少一个纳米线 通过对图案化的SiyGe1-y层进行第一氧化处理。
摘要:
A method of forming a nanowire and a semiconductor device comprising the nanowire are provided. The method of forming a nanowire includes forming a patterned SiyGe1-y layer (where, y is a real number that satisfies 0≦y
摘要翻译:提供了形成纳米线的方法和包括纳米线的半导体器件。 形成纳米线的方法包括在基底层上形成图案化的SiyGe1-y层(其中,y是满足0 <= y <1的实数),并且在第一层中形成第一氧化物层和至少一个纳米线 在图案化的SiyGe1-y层上进行第一氧化处理。