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公开(公告)号：US07381276B2
公开(公告)日：2008-06-03
申请号：US10064451
申请日：2002-07-16
CPC分类号： H01L21/68721 , H01L21/68728 , H01L21/68735
摘要： An apparatus for holding a semiconductor substrate comprises a plate having a pocket which holds the substrate, wherein the pocket comprises a lower surface and an inner edge. The inner edge comprises a plurality of members extending radially inward to reduce the area of contact between the inner edge and the substrate. The beveled edge is inclined so that there is an acute angle between the lower surface of the pocket and the beveled edge.
摘要翻译： 用于保持半导体衬底的装置包括具有保持衬底的口袋的板，其中袋包括下表面和内边缘。 内边缘包括径向向内延伸的多个构件，以减小内缘和衬底之间的接触面积。 倾斜的边缘倾斜，使得在凹槽的下表面和斜边之间存在锐角。
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公开(公告)号：US06194030B1
公开(公告)日：2001-02-27
申请号：US09271515
申请日：1999-03-18
IPC分类号： C23C1600
CPC分类号： C23C16/45502 , C23C16/455 , C23C16/45591
摘要： An apparatus (10) for depositing a thin film on each surface (116) of a plurality of substrates, such as wafers (114). The apparatus comprises a liner tube (50) having a first end (54), a second end (56) and an interior (68) capable of accommodating the substrates between the first and second ends. The apparatus includes a gas supply system (140) for providing a reactive gas to the liner tube interior at or near its first end, and a gas exhaust system (160) to exhaust the gas emerging from the second end. A gas flow restrictor (120) is arranged at the second end and is designed so as to restrict the flow of the gas at the second end such that the gas flow velocity at the first end is substantially the same as the gas flow velocity at the second end. This uniformizes the gas flow between the substrates within the liner tube, which results in the thin film being deposited more uniformly on each wafer surface.
摘要翻译： 一种用于在诸如晶片（114）的多个基板的每个表面（116）上沉积薄膜的设备（10）。 该装置包括具有第一端（54），第二端（56）和能够容纳第一和第二端之间的衬底的内部（68）的衬管（50）。 该装置包括用于在其第一端处或其附近向衬管管内部提供反应性气体的气体供应系统（140），以及用于排出从第二端排出的气体的排气系统（160）。 气体限流器（120）设置在第二端，并且设计成限制第二端处的气体流动，使得第一端处的气体流速基本上与在第一端处的气体流速相同 第二端 这使衬管内的衬底之间的气流均匀化，这导致薄膜更均匀地沉积在每个晶片表面上。
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