Imager with reduced FET photoresponse and high integrity contact via
    1.
    发明授权
    Imager with reduced FET photoresponse and high integrity contact via 有权
    具有降低的FET光响应和高完整性接触通孔的成像器

    公开(公告)号:US06396046B1

    公开(公告)日:2002-05-28

    申请号:US09643228

    申请日:2000-08-22

    IPC分类号: H01L2700

    摘要: A light block material disposed over the photosensitive region of a switching device (e.g., TFT) of a radiation imager is disclosed. The light block material prevents optical photons emitted from a scintillator from passing into the switching device and being absorbed. Cross-talk and noise in the imager are thereby reduced. Also, non-linear pixel response and spurious signals passing to readout electronics are avoided. Optionally, opaque caps comprising the same light block material may be included in the imager structure. The caps cover contact vias filled with a common electrode and located in the contact finger region of the imager. The integrity of the filled vias is thereby maintained during subsequent processing. Also disclosed is a radiation imager containing these structures.

    摘要翻译: 公开了一种设置在辐射成像器的开关装置(例如TFT)的感光区域上的光阻材料。 光阻止材料防止从闪烁体发出的光子光子进入开关装置并被吸收。 因此,成像器中的串扰和噪声被降低。 此外,避免了非线性像素响应和传递到读出电子装置的寄生信号。 可选地,包含相同的光块材料的不透明盖可以包括在成像器结构中。 帽盖覆盖填充有公共电极并位于成像器的接触指状区域中的接触通孔。 从而在随后的处理期间保持填充的通孔的完整性。 还公开了包含这些结构的辐射成像仪。

    High resolution radiation imager
    2.
    发明授权
    High resolution radiation imager 失效
    高分辨率辐射成像仪

    公开(公告)号:US6031234A

    公开(公告)日:2000-02-29

    申请号:US986534

    申请日:1997-12-08

    IPC分类号: G01T1/20

    CPC分类号: G01T1/2018 G01T1/2002

    摘要: A radiation imager includes a photosensor array that is coupled to a scintillator so as to detect optical photons generated when incident radiation is absorbed in the scintillator. The imager includes an optical crosstalk attenuator that is optically coupled to a first surface of the scintillator (that is, the surface opposite the photosensor). The optical crosstalk attenuator includes an optical absorption material that is disposed so as to inhibit reflection of optical photons incident on the scintillator first surface back into the scintillator along selected crosstalk reflection paths. The crosstalk reflection paths are those paths oriented such that optical photons passing along such paths would be incident upon photosensor array pixels that are outside of a selected focal area corresponding to the absorption point in the scintillator. The imager further may include an optical screen layer that is optically coupled to the scintillator second surface so as to be disposed between the scintillator and the photosensor array. The optical screen layer is made of a substantially transparent material selected to have a critical index of refraction so as to cause preferential reflection of optical photons that are incident on the screen layer to reduce optical crosstalk.

    摘要翻译: 辐射成像仪包括耦合到闪烁体的光电传感器阵列,以便检测入射辐射在闪烁体中吸收时产生的光子。 该成像器包括光学串扰衰减器,其光耦合到闪烁体的第一表面(即,与光电传感器相对的表面)。 光学串扰衰减器包括光吸收材料,其被设置为禁止入射到闪烁体第一表面上的光子光沿所选择的串扰反射路径返回到闪烁体中。 串扰反射路径是这样的路径,使得沿着这些路径通过的光子将入射到对应于闪烁体中的吸收点的选定焦点区域之外的光电传感器阵列像素。 成像器还可以包括光学屏蔽层,其光耦合到闪烁体第二表面,以便设置在闪烁体和光电传感器阵列之间。 光学屏幕层由选择为具有临界折射率的基本上透明的材料制成,以便引起入射到屏幕层上的光子的优先反射以减少光学串扰。

    Induced charge prevention in semiconductor imaging devices
    3.
    发明授权
    Induced charge prevention in semiconductor imaging devices 失效
    半导体成像装置中的诱发电荷预防

    公开(公告)号:US5736732A

    公开(公告)日:1998-04-07

    申请号:US772641

    申请日:1996-12-23

    CPC分类号: H01L27/14603

    摘要: An imager array includes a substrate with a plurality of superimposed layers of electrically conductive and active components. Sets of scan and data lines are electrically insulated from one another and also from a common electrode and active array components by dielectric material. Protection of the active components against static charge potential includes resistive means between the common electrode and a ground ring conductor around the array elements and in particular a thin film transistor circuit with a parallel pair of opposite polarity diode connected field effect transistors to safely drain the static charge during subsequent fabrication, test and standby period of the imager, while remaining in circuit during imager operation. Further electrostatic charge protection is provided to the array by an protective apparatus adapted to support the radiation imager while electrically contacting its ground ring to facilitate handling and processing while protecting against electrostatic charge damage during fabrication and testing, and enabling the positioning and bonding of the flexible external connections to the contact pads of the imager. Provision is made to enable heat and pressure for thermode bonding through the fixture to the contact pads while the imager is secured within the fixture.

    摘要翻译: 成像器阵列包括具有导电和有源部件的多个重叠层的衬底。 扫描和数据线的集合彼此电绝缘,并且还通过介电材料从公共电极和有源阵列组件电绝缘。 保护有源元件免受静电荷电势包括在公共电极和围绕阵列元件的接地环形导体之间的电阻性装置,特别是具有并联对的相反极性二极管的薄膜晶体管电路连接的场效应晶体管,以安全地将静电 在成像器的后续制作,测试和待机期间充电,同时在成像器操作期间保持在电路中。 通过适于支持辐射成像仪的保护装置向阵列提供进一步的静电电荷保护,同时电接触其接地环以促进处理和处理,同时在制造和测试期间防止静电电荷损坏,并且使得能够定位和粘合柔性 外部连接到成像器的接触垫。 这样做是为了在成像器固定在固定装置内的同时,通过固定装置对接触垫进行热源接合的热和压力。

    Solid-state radiation imager with back-side irradiation
    4.
    发明授权
    Solid-state radiation imager with back-side irradiation 有权
    固体辐射成像仪具有背面照射

    公开(公告)号:US07019304B2

    公开(公告)日:2006-03-28

    申请号:US10681767

    申请日:2003-10-06

    IPC分类号: G01T1/24

    CPC分类号: G01T1/2018

    摘要: A solid-state imager with back-side irradiation. The present invention provides a solid-state imager that includes a substantially radiation transparent substrate adapted to receive incident radiation. The radiation travels through the substrate and a pixelated array of photosensitive elements to a scintillator material, which absorbs the radiation. The pixelated array of photosensitive elements receives light photons and measures the amount of light generated by radiation interactions with the scintillator material. With this imager, there is less spreading and blurring and thus a better quality image. In another embodiment, there is a substantially transparent material disposed between the pixelated array of photosensitive elements and the scintillator material. The substantially transparent material absorbs and substantially blocks electrons from entering the active regions of the pixelated array of photosensitive elements. This enables the imager to perform for a longer period of time according to its specifications.

    摘要翻译: 具有背面照射的固态成像仪。 本发明提供了一种固态成像器,其包括适于接收入射辐射的基本上辐射透明的衬底。 辐射通过基片和像素化的感光元件阵列到闪烁体材料,其吸收辐射。 感光元件的像素化阵列接收光子并测量与闪烁体材料的辐射相互作用产生的光量。 有了这个成像器,传播和模糊就越少,从而形象越好。 在另一个实施例中,存在设置在像素化的感光元件阵列和闪烁体材料之间的基本上透明的材料。 基本上透明的材料吸收并基本上阻挡电子进入感光元件的像素化阵列的有源区域。 这使得成像器能够根据其规格执行更长的时间。

    Imaging array
    5.
    发明授权
    Imaging array 失效
    成像阵列

    公开(公告)号:US07307301B2

    公开(公告)日:2007-12-11

    申请号:US10322117

    申请日:2002-12-17

    IPC分类号: H01L31/062

    摘要: A method for fabricating an imaging array includes forming a first dielectric barrier, forming a light block element on the first dielectric barrier, wherein the light block element is at least coextensive with a gate, and forming a second dielectric barrier on the first dielectric barrier and the light block element such that the light block element is encapsulated between the first dielectric barrier and the second dielectric barrier.

    摘要翻译: 一种用于制造成像阵列的方法包括:形成第一电介质阻挡层,在第一电介质阻挡层上形成光阻元件,其中光阻元件至少与栅极共同延伸;以及在第一电介质势垒上形成第二电介质势垒; 所述光阻挡元件使得所述光阻挡元件被封装在所述第一电介质阻挡层和所述第二电介质阻挡层之间。

    Imaging array and methods for fabricating same
    6.
    发明授权
    Imaging array and methods for fabricating same 有权
    成像阵列及其制造方法

    公开(公告)号:US06740884B2

    公开(公告)日:2004-05-25

    申请号:US10116469

    申请日:2002-04-03

    IPC分类号: H01L2100

    CPC分类号: H01L27/14658

    摘要: A radiation detector includes a top gate thin film transistor (TFT) including a source electrode, a drain electrode, a gate electrode, a first dielectric layer, and a second dielectric layer, wherein the second dielectric layer is extending over a surface of the first dielectric layer. The radiation detector also includes a capacitor that includes at least two electrodes and a dielectric layer. The capacitor dielectric layer is formed unitarily with the TFT second dielectric layer.

    摘要翻译: 一种辐射检测器,包括:一个包括源电极,漏电极,栅电极,第一电介质层和第二电介质层的顶栅极薄膜晶体管,其中第二电介质层在第一电介质层的表面上延伸 电介质层。 辐射检测器还包括包括至少两个电极和电介质层的电容器。 电容器电介质层与TFT第二电介质层一体地形成。

    Method and apparatus for processing a fluoroscopic image
    7.
    发明授权
    Method and apparatus for processing a fluoroscopic image 有权
    用于处理透视图像的方法和装置

    公开(公告)号:US06621887B2

    公开(公告)日:2003-09-16

    申请号:US09977474

    申请日:2001-10-15

    IPC分类号: G03C900

    摘要: In one aspect of the invention a method for processing a fluoroscopic image is provided. The method includes scanning an object with an imaging system including at least one radiation source and at least one detector array, acquiring a plurality of dark images to generate a baseline image, acquiring a plurality of lag images subsequent to the baseline image, determining a plurality of parameters of a power law using at least one lag image and at least one baseline image, and performing a log—log extrapolation of the power law including the determined parameters.

    摘要翻译: 在本发明的一个方面,提供了一种用于处理透视图像的方法。 该方法包括用包括至少一个辐射源和至少一个检测器阵列的成像系统扫描对象,获取多个暗图像以生成基线图像,获取基线图像之后的多个滞后图像,确定多个 使用至少一个滞后图像和至少一个基线图像的功率律的参数,以及执行包括确定的参数的幂定律的对数对数外推。

    High resolution and high luminance scintillator and radiation imager employing the same
    8.
    发明授权
    High resolution and high luminance scintillator and radiation imager employing the same 失效
    高分辨率和高亮度闪烁体和采用该闪烁体的辐射成像仪

    公开(公告)号:US06384400B1

    公开(公告)日:2002-05-07

    申请号:US09451030

    申请日:1999-11-29

    IPC分类号: H01J4014

    CPC分类号: G01T1/201 G01T1/2002

    摘要: A fiber optic scintillator includes, for example, a first plurality of radiation absorbing elements comprising a scintillating material for converting radiation into light and a second plurality of radiation absorbing elements interspersed among the first plurality of radiation absorbing elements. The first plurality of radiation absorbing elements has a first radiation absorption efficiency. The second plurality of radiation absorbing elements has a second radiation absorption efficiency and an effective atomic number greater than about 50. The second radiation absorption efficiency is greater than said first radiation absorption efficiency. A scintillator forming method provides a bundle of the second plurality of radiation absorbing elements interspersed among the first plurality of radiation absorbing elements by drawing the bundle, The drawn bundle is cut into a plurality of sections. The plurality of sections are assembled to form the scintillator having an array of parallel first and second radiation absorbing elements.

    摘要翻译: 光纤闪烁器包括例如包括用于将辐射转换成光的闪烁材料的第一多个辐射吸收元件和散布在第一多个辐射吸收元件之间的第二多个辐射吸收元件。 第一组多个辐射吸收元件具有第一辐射吸收效率。 第二多个辐射吸收元件具有大于约50的第二辐射吸收效率和有效原子序数。第二辐射吸收效率大于所述第一辐射吸收效率。 闪烁体形成方法通过拉伸束提供散布在第一多个辐射吸收元件之间的第二多个辐射吸收元件的束。将所拉伸的束切割成多个部分。 组合多个部分以形成具有平行的第一和第二辐射吸收元件的阵列的闪烁体。

    Storage capacitor design for a solid state imager
    9.
    发明授权
    Storage capacitor design for a solid state imager 有权
    存储电容设计为固态成像仪

    公开(公告)号:US07145152B2

    公开(公告)日:2006-12-05

    申请号:US10687407

    申请日:2003-10-14

    CPC分类号: H01L27/14658

    摘要: Storage capacitor design for a solid state imager. The imager includes several pixels disposed on a substrate in an imaging array pattern. Each pixel includes a photosensor coupled to a thin film switching transistor. Several scan lines are disposed at a first level with respect to the substrate along a first axis and several data lines are disposed at a second level along a second axis of the imaging array. Several data lines disposed at a second level with respect to the substrate along a second axis of the imaging array pattern. Each pixel comprises a storage capacitor coupled parallel to the photosensor, the storage capacitor comprising a storage capacitor electrode and a capacitor common electrode.

    摘要翻译: 存储电容设计为固态成像仪。 成像器包括以成像阵列图案设置在基板上的若干像素。 每个像素包括耦合到薄膜开关晶体管的光电传感器。 若干扫描线沿着第一轴相对于基板设置在第一水平面上,并且沿着成像阵列的第二轴将多条数据线布置在第二级。 沿着成像阵列图案的第二轴相对于衬底设置在第二水平的几条数据线。 每个像素包括与光电传感器并联耦合的存储电容器,存储电容器包括存储电容器电极和电容器公共电极。

    Method for monitoring production of pixel detectors and detectors produced thereby
    10.
    发明授权
    Method for monitoring production of pixel detectors and detectors produced thereby 失效
    用于监视由此产生的像素检测器和检测器的生成的方法

    公开(公告)号:US06982176B2

    公开(公告)日:2006-01-03

    申请号:US10696881

    申请日:2003-10-30

    IPC分类号: H01L21/66

    摘要: A method for monitoring the quality of a manufacturing process for making detector panels that have a plurality of pixels in a two-dimensional array includes, in each detector panel, manufacturing a set of baseline pixels and a set of test pixels. Each test pixel has an electrical component having a geometric dimension varied by an amount sufficient to introduce a measurable variation in a test that measures parameters of pixels that are dependent upon the varied dimension. The method further includes performing the test on the set of baseline pixels and the set of varied pixels, analyzing the results of the test, and adjusting parameters of the manufacturing process in accordance with the analysis.

    摘要翻译: 用于监测具有二维阵列中的多个像素的检测器面板的制造过程质量的方法包括在每个检测器面板中制造一组基线像素和一组测试像素。 每个测试像素具有电子部件,其几何尺寸变化量足以在测量中引入可测量的变化的量,其测量取决于变化的维度的像素的参数。 该方法还包括对基准像素集合和不同像素组进行测试,分析测试结果,以及根据分析调整制造过程的参数。