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1.发明授权公开(公告)号：US06396046B1
公开(公告)日：2002-05-28
申请号：US09643228
申请日：2000-08-22
IPC分类号： H01L2700
CPC分类号： H01L27/14663 , H01L27/14609 , H01L27/14623
摘要： A light block material disposed over the photosensitive region of a switching device (e.g., TFT) of a radiation imager is disclosed. The light block material prevents optical photons emitted from a scintillator from passing into the switching device and being absorbed. Cross-talk and noise in the imager are thereby reduced. Also, non-linear pixel response and spurious signals passing to readout electronics are avoided. Optionally, opaque caps comprising the same light block material may be included in the imager structure. The caps cover contact vias filled with a common electrode and located in the contact finger region of the imager. The integrity of the filled vias is thereby maintained during subsequent processing. Also disclosed is a radiation imager containing these structures.
摘要翻译： 公开了一种设置在辐射成像器的开关装置（例如TFT）的感光区域上的光阻材料。 光阻止材料防止从闪烁体发出的光子光子进入开关装置并被吸收。 因此，成像器中的串扰和噪声被降低。 此外，避免了非线性像素响应和传递到读出电子装置的寄生信号。 可选地，包含相同的光块材料的不透明盖可以包括在成像器结构中。 帽盖覆盖填充有公共电极并位于成像器的接触指状区域中的接触通孔。 从而在随后的处理期间保持填充的通孔的完整性。 还公开了包含这些结构的辐射成像仪。
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公开(公告)号：US6031234A
公开(公告)日：2000-02-29
申请号：US986534
申请日：1997-12-08
IPC分类号： G01T1/20
CPC分类号： G01T1/2018 , G01T1/2002
摘要： A radiation imager includes a photosensor array that is coupled to a scintillator so as to detect optical photons generated when incident radiation is absorbed in the scintillator. The imager includes an optical crosstalk attenuator that is optically coupled to a first surface of the scintillator (that is, the surface opposite the photosensor). The optical crosstalk attenuator includes an optical absorption material that is disposed so as to inhibit reflection of optical photons incident on the scintillator first surface back into the scintillator along selected crosstalk reflection paths. The crosstalk reflection paths are those paths oriented such that optical photons passing along such paths would be incident upon photosensor array pixels that are outside of a selected focal area corresponding to the absorption point in the scintillator. The imager further may include an optical screen layer that is optically coupled to the scintillator second surface so as to be disposed between the scintillator and the photosensor array. The optical screen layer is made of a substantially transparent material selected to have a critical index of refraction so as to cause preferential reflection of optical photons that are incident on the screen layer to reduce optical crosstalk.
摘要翻译： 辐射成像仪包括耦合到闪烁体的光电传感器阵列，以便检测入射辐射在闪烁体中吸收时产生的光子。 该成像器包括光学串扰衰减器，其光耦合到闪烁体的第一表面（即，与光电传感器相对的表面）。 光学串扰衰减器包括光吸收材料，其被设置为禁止入射到闪烁体第一表面上的光子光沿所选择的串扰反射路径返回到闪烁体中。 串扰反射路径是这样的路径，使得沿着这些路径通过的光子将入射到对应于闪烁体中的吸收点的选定焦点区域之外的光电传感器阵列像素。 成像器还可以包括光学屏蔽层，其光耦合到闪烁体第二表面，以便设置在闪烁体和光电传感器阵列之间。 光学屏幕层由选择为具有临界折射率的基本上透明的材料制成，以便引起入射到屏幕层上的光子的优先反射以减少光学串扰。
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公开(公告)号：US5736732A
公开(公告)日：1998-04-07
申请号：US772641
申请日：1996-12-23
申请人： George Edward Possin , Douglas Albagli , Robert Forrest Kwasnick , Rowland Frederick Saunders , Habib Vafi
发明人： George Edward Possin , Douglas Albagli , Robert Forrest Kwasnick , Rowland Frederick Saunders , Habib Vafi
IPC分类号： G01T1/00 , H01L27/14 , H01L27/146 , H04N5/335 , H01J40/14
CPC分类号： H01L27/14603
摘要： An imager array includes a substrate with a plurality of superimposed layers of electrically conductive and active components. Sets of scan and data lines are electrically insulated from one another and also from a common electrode and active array components by dielectric material. Protection of the active components against static charge potential includes resistive means between the common electrode and a ground ring conductor around the array elements and in particular a thin film transistor circuit with a parallel pair of opposite polarity diode connected field effect transistors to safely drain the static charge during subsequent fabrication, test and standby period of the imager, while remaining in circuit during imager operation. Further electrostatic charge protection is provided to the array by an protective apparatus adapted to support the radiation imager while electrically contacting its ground ring to facilitate handling and processing while protecting against electrostatic charge damage during fabrication and testing, and enabling the positioning and bonding of the flexible external connections to the contact pads of the imager. Provision is made to enable heat and pressure for thermode bonding through the fixture to the contact pads while the imager is secured within the fixture.
摘要翻译： 成像器阵列包括具有导电和有源部件的多个重叠层的衬底。 扫描和数据线的集合彼此电绝缘，并且还通过介电材料从公共电极和有源阵列组件电绝缘。 保护有源元件免受静电荷电势包括在公共电极和围绕阵列元件的接地环形导体之间的电阻性装置，特别是具有并联对的相反极性二极管的薄膜晶体管电路连接的场效应晶体管，以安全地将静电 在成像器的后续制作，测试和待机期间充电，同时在成像器操作期间保持在电路中。 通过适于支持辐射成像仪的保护装置向阵列提供进一步的静电电荷保护，同时电接触其接地环以促进处理和处理，同时在制造和测试期间防止静电电荷损坏，并且使得能够定位和粘合柔性 外部连接到成像器的接触垫。 这样做是为了在成像器固定在固定装置内的同时，通过固定装置对接触垫进行热源接合的热和压力。
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公开(公告)号：US5777355A
公开(公告)日：1998-07-07
申请号：US772446
申请日：1996-12-23
IPC分类号： H01L27/14 , H01L27/146 , H01L31/04 , H01L31/10 , H01L27/148 , H01L31/00
CPC分类号： H01L27/14643 , H01L27/14623
摘要： A radiation imager having a plurality of photosensitive elements has a two-tier passivation layer disposed between the top patterned common electrode contact layer and respective photosensor islands. The top passivation layer is a polymer bridge member disposed between adjacent photodiodes so as to isolate defects such as moisture-induced leakage in any bridge island layer to the two adjacent photodiodes spanned by the bridge island.
摘要翻译： 具有多个感光元件的辐射成像器具有设置在顶部图案化的公共电极接触层和相应的光电传感器岛之间的双层钝化层。 顶部钝化层是设置在相邻的光电二极管之间的聚合物桥构件，以便将任何桥岛层中的水分诱发泄漏的缺陷隔离到由桥岛跨越的两个相邻的光电二极管。
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公开(公告)号：US06465286B2
公开(公告)日：2002-10-15
申请号：US09681070
申请日：2000-12-20
IPC分类号： H01L2100
CPC分类号： H01L29/66765 , H01L27/14609 , H01L27/14692
摘要： RD-25953-17-A method of fabricating an imager array having a plurality of pixels is provided in which each pixel is made up of a photodiode and a corresponding thin film transistor (TFT) switching device, the method including the steps of depositing materials to form the photodiode island and to form a TFT body over a gate electrode, then depositing a layer of source/drain metal over the silicon layers of the TFT body, and over a common dielectric layer, removing sections of the source/drain metal layer to expose a portion of the silicon layers of the TFT body, but leaving regions of sacrificial source/drain metal over the photodiode islands, and forming a back channel in the TFT body by a back channel etch step. The method further includes then removing the sacrificial regions of source/drain metal from above the photodiode islands, and depositing a passivation layer over the entire exposed surface of the array.
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公开(公告)号：US06680216B2
公开(公告)日：2004-01-20
申请号：US10187241
申请日：2002-07-02
IPC分类号： H01L2100
CPC分类号： H01L31/022408 , H01L27/14603
摘要： In an imager having an array of light-sensitive elements and employing striped common electrodes, exposed edges of preimidized polyimide layers above the light-sensitive imaging elements are sealed with the material of the common electrode (e.g., indium tin oxide). Similarly, exposed preimidized polyimide edges in electrical contacts for the array and bridge members electrically coupling adjacent light-sensitive imaging elements are also sealed with the material of the common electrode.
摘要翻译： 在具有感光元件阵列并使用条纹公共电极的成像器中，用感光成像元件上方的预聚酰亚胺层的暴露边缘用公共电极材料（例如氧化铟锡）密封。 类似地，用于阵列的电触头中暴露的预聚酰亚胺边缘和电耦合相邻感光成像元件的桥接元件也用公共电极的材料密封。
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7.发明授权公开(公告)号：US06724010B1
公开(公告)日：2004-04-20
申请号：US09632106
申请日：2000-08-03
IPC分类号： H01L310392
CPC分类号： H01L31/022408 , H01L27/14603 , H01L27/14658
摘要： A solid state imager is provided that comprises an imaging array of gated photodiodes. The imager comprises a plurality of photosensor pixels arranged in a pixel array, and each of the photosensor pixels includes a photodiode having a sidewall, the sidewall having a gate dielectric layer disposed thereon, and a field plate disposed around the photodiode body. The field plate comprises amorphous silicon disposed on the gate dielectric layer and extends substantially completely around the sidewall of said photodiode. The field plate is electrically coupled to the common electrode of the imaging array so that the field plate creates an electric field around the photodiode body in correspondence with the potential of said common electrode. A method of fabricating the gated photodiode array is also provided.
摘要翻译： 提供固态成像器，其包括门控光电二极管的成像阵列。 成像器包括排列在像素阵列中的多个光电传感器像素，并且每个光传感器像素包括具有侧壁的光电二极管，该侧壁具有设置在其上的栅介质层，以及设置在光电二极管主体周围的场板。 场板包括设置在栅极电介质层上并且基本上完全围绕所述光电二极管的侧壁延伸的非晶硅。 场板电耦合到成像阵列的公共电极，使得场板与所述公共电极的电位相对应地在光电二极管主体周围产生电场。 还提供了一种制造门控光电二极管阵列的方法。
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公开(公告)号：US6093580A
公开(公告)日：2000-07-25
申请号：US138730
申请日：1998-08-24
IPC分类号： G01J1/02 , H01L27/146 , H01L21/84
CPC分类号： H01L27/14601
摘要： A method of forming a contact for a photosensitive element of a photosensitive imager including a common electrode separated from a bottom contact by intervening layers of an SiOx transistor passivation layer over the bottom contact and an SiNx diode passivation layer over the transistor passivation layer. Controlled etching through the passivation layers exposes but does not damage the thin film transistor passivation layer extending in regions beyond the common electrode, and also improves adherence of a protective gasket in such regions. The contact pad formed in this process has a layer of diode passivation material and a layer of transistor passivation material disposed between the upper common electrode material layer and the underlying source and drain electrode material layer, with a via provided having smooth and sloped sidewalls over which the common electrode material extends to provide electrical contact between the common electrode material layer and the source and drain electrode material layer.
摘要翻译： 一种用于感光成像器的感光元件的接触的方法，该感光成像器包括通过在底部触点上的SiO x晶体管钝化层的中间层和在晶体管钝化层上的SiNx二极管钝化层从底部触点分离的公共电极。 通过钝化层的受控蚀刻暴露，但不损坏在超过公共电极的区域中延伸的薄膜晶体管钝化层，并且还改善了在这些区域中的保护性垫片的粘附性。 在该工艺中形成的接触焊盘具有二极管钝化材料层和设置在上部公共电极材料层和下部源极和漏极材料层之间的晶体管钝化材料层，其中通孔具有平滑且倾斜的侧壁 公共电极材料延伸以在公共电极材料层和源极和漏极材料层之间提供电接触。
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公开(公告)号：US06465824B1
公开(公告)日：2002-10-15
申请号：US09522231
申请日：2000-03-09
IPC分类号： H01L31062
CPC分类号： H01L31/022408 , H01L27/14603
摘要： In an imager having an array of light-sensitive elements and employing striped common electrodes, exposed edges of preimidized polyimide layers above the light-sensitive imaging elements are sealed with the material of the common electrode (e.g., indium tin oxide). Similarly, exposed preimidized polyimide edges in electrical contacts for the array and bridge members electrically coupling adjacent light-sensitive imaging elements are also sealed with the material of the common electrode.
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公开(公告)号：US5859463A
公开(公告)日：1999-01-12
申请号：US772368
申请日：1996-12-23
IPC分类号： G01J1/02 , H01L27/146 , H01J40/14
CPC分类号： H01L27/14601
摘要： A method of forming a contact for a photosensitive element of a photosensitive imager including a common electrode separated from a bottom contact by intervening layers of an SiOx transistor passivation layer over the bottom contact and an SiNx diode passivation layer over the transistor passivation layer. Controlled etching through the passivation layers exposes but does not damage the thin film transistor passivation layer extending in regions beyond the common electrode, and also improves adherence of a protective gasket in such regions. The contact pad formed in this process has a layer of diode passivation material and a layer of transistor passivation material disposed between the upper common electrode material layer and the underlying source and drain electrode material layer, with a via provided having smooth and sloped sidewalls over which the common electrode material extends to provide electrical contact between the common electrode material layer and the source and drain electrode material layer.
摘要翻译： 一种用于感光成像器的感光元件的接触的方法，该感光成像器包括通过在底部触点上的SiO x晶体管钝化层的中间层和在晶体管钝化层上的SiNx二极管钝化层从底部触点分离的公共电极。 通过钝化层的受控蚀刻暴露，但不破坏在超过公共电极的区域中延伸的薄膜晶体管钝化层，并且还改善了在这些区域中的保护性垫片的粘附性。 在该工艺中形成的接触焊盘具有二极管钝化材料层和设置在上部公共电极材料层和下部源极和漏极材料层之间的晶体管钝化材料层，其中通孔具有平滑且倾斜的侧壁 公共电极材料延伸以在公共电极材料层和源极和漏极材料层之间提供电接触。
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