公开(公告)号：US5838625A

公开(公告)日：1998-11-17

申请号：US742820

申请日：1996-10-29

申请人： Douglas J. Cutter ,  Fan Ho ,  Kurt D. Beigel

发明人： Douglas J. Cutter ,  Fan Ho ,  Kurt D. Beigel

IPC分类号： G11C17/18 ,  G11C17/16

CPC分类号： G11C17/18

摘要： A programmable circuit in an integrated circuit provides a programmed signal, which is based on the state of a first node. An anti-fuse includes a first terminal coupled to the first node and a second terminal coupled to a programming bus. An anti-fuse programming pad is coupled to the first programming bus for permitting a sufficient voltage to short the first anti-fuse to be applied to the first programming bus from external to the integrated circuit. The state of the programmed signal can be used to replace a primary circuit element in the integrated circuit, such a row or column of memory cells in a memory integrated circuit, with a redundant circuit element.

公开(公告)号：US06525399B2

公开(公告)日：2003-02-25

申请号：US09990022

申请日：2001-11-21

申请人： Douglas J. Cutter ,  Fan Ho ,  Kurt D. Beigel

发明人： Douglas J. Cutter ,  Fan Ho ,  Kurt D. Beigel

IPC分类号： H01L2900

CPC分类号： H01L23/5252 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and apparatus for forming a junctionless antifuse semiconductor structure comprises forming an antifuse in non-active areas of a semiconductor wafer. In one embodiment, the antifuse is formed over a polysilicon layer, which is coupled to a field oxide layer. In a further embodiment, the polysilicon layer comprises a bottom conductor layer in the antifuse. In another embodiment, a refractory metal silicide layer is formed between the polysilicon layer and the antifuse. In yet a further embodiment, the refractory metal silicide layer comprises the bottom conductor layer in the antifuse.

公开(公告)号：US06185705B2

公开(公告)日：2001-02-06

申请号：US08813525

申请日：1997-03-07

申请人： Douglas J. Cutter ,  Adrian E. Ong ,  Fan Ho ,  Kurt D. Beigel ,  Brett M. Debenham ,  Dien Luong ,  Kim Pierce ,  Patrick J. Mullarkey

发明人： Douglas J. Cutter ,  Adrian E. Ong ,  Fan Ho ,  Kurt D. Beigel ,  Brett M. Debenham ,  Dien Luong ,  Kim Pierce ,  Patrick J. Mullarkey

IPC分类号： G11C2900

CPC分类号： G11C17/18

摘要： Method and apparatus are disclosed for checking the resistance of antifuse elements in an integrated circuit. A voltage based on the resistance of an antifuse element is compared to a voltage based on a known resistance, and an output signal is generated whose binary value indicates whether the resistance of the antifuse element is higher or lower than the known value of resistance. The method and apparatus are useful in verifying the programming of antifuse elements.

摘要翻译： 公开了用于检查集成电路中的反熔丝元件的电阻的方法和装置。 将基于反熔丝元件的电阻的电压与基于已知电阻的电压进行比较，并且生成其二进制值表示反熔丝元件的电阻是否高于或低于已知电阻值的输出信号。 该方法和装置在验证反熔丝元件的编程方面是有用的。

公开(公告)号：US5856950A

公开(公告)日：1999-01-05

申请号：US918656

申请日：1997-08-22

申请人： Douglas J. Cutter ,  Fan Ho ,  Kurt D. Beigel

发明人： Douglas J. Cutter ,  Fan Ho ,  Kurt D. Beigel

IPC分类号： G11C7/00 ,  G11C29/00

CPC分类号： G11C29/838

摘要： The cancellation of a redundant element of an integrated circuit with a cancel bank is disclosed. In one embodiment, a fuse or antifuse bank is coupled to the redundant element and permanently programmed to respond to the address of a defective primary element. If the redundant element is found to be defective, the fuse or antifuse bank is canceled, and a result the redundant element is also canceled. A cancel line of the fuse or antifuse bank, along with the cancel line of each of a plurality of other fuse or antifuse banks, is coupled to a cancel bank. The cancel bank comprises a multiplexer and a plurality of cancel antifuses less in number than the number of fuse or antifuse banks. The cancel antifuses are selectively enabled such that the fuse or antifuse bank coupled to the defective redundant element may be canceled.

公开(公告)号：US5631862A

公开(公告)日：1997-05-20

申请号：US611419

申请日：1996-03-05

申请人： Douglas J. Cutter ,  Kurt D. Beigel ,  Adrian E. Ong ,  Fan Ho ,  Patrick J. Mullarkey ,  Dien S. Luong ,  Brett Debenham ,  Kim M. Pierce

发明人： Douglas J. Cutter ,  Kurt D. Beigel ,  Adrian E. Ong ,  Fan Ho ,  Patrick J. Mullarkey ,  Dien S. Luong ,  Brett Debenham ,  Kim M. Pierce

IPC分类号： G11C17/18 ,  G11C17/16

CPC分类号： G11C17/18

摘要： An antifuse bank includes a bank of self-decoupling antifuse circuits. The antifuse circuits are programmed according to a pattern of address bits by blowing antifuses corresponding to bits of the address. The antifuses are blown by applying a high voltage across the antifuse. As each antifuse is blown, its resistance drops and current through the antifuse increases. The self-decoupling circuit detects the increased current flow and, when the antifuse resistance is sufficiently low, limits current flow through the antifuse. The antifuse thus does not load the high voltage source as other antifuses are blown.

摘要翻译： 反熔丝库包括一组自解耦反熔丝电路。 反熔丝电路根据地址位的模式通过吹出与地址的位相对应的反熔丝来编程。 通过在反熔丝上施加高电压来吹制反熔丝。 当每个反熔丝熔断时，其电阻下降，并且通过反熔丝的电流增加。 自解耦电路检测到增加的电流，并且当反熔丝电阻足够低时，限制了通过反熔丝的电流流动。 因此，反熔丝因其他反熔丝被吹制而不加载高压源。

公开(公告)号：US06462608B2

公开(公告)日：2002-10-08

申请号：US08896490

申请日：1997-07-18

申请人： Douglas J. Cutter ,  Kurt D. Beigel ,  Fan Ho

发明人： Douglas J. Cutter ,  Kurt D. Beigel ,  Fan Ho

IPC分类号： H01H3776

CPC分类号： G11C29/785 ,  G11C17/18 ,  G11C29/83

摘要： A programmable circuit includes a first node and provides a programmed signal based on the state of the first node. A first anti-fuse has a programmed state and an unprogrammed state and couples the first node to a first power supply when in the programmed state and decouples the first node from the first power supply when in the unprogrammed state. A second anti-fuse has a programmed state and an unprogrammed state and couples the first node to a second power supply when in the programmed state and decouples the first node from the second power supply when in the unprogrammed state. The state of the programmed signal can be used to replace a primary circuit element of an integrated circuit with a redundant circuit element.

摘要翻译： 可编程电路包括第一节点并且基于第一节点的状态提供编程信号。 第一反熔丝具有编程状态和未编程状态，并且当处于编程状态时将第一节点耦合到第一电源并且当处于未编程状态时将第一节点与第一电源解耦。 第二反熔丝具有编程状态和未编程状态，并且当处于编程状态时将第一节点耦合到第二电源，并且当处于未编程状态时将第一节点与第二电源解耦。 编程信号的状态可用于用冗余电路元件代替集成电路的主电路元件。

公开(公告)号：US06456149B2

公开(公告)日：2002-09-24

申请号：US09794685

申请日：2001-02-27

申请人： Douglas J. Cutter ,  Kurt D. Beigel ,  Fan Ho

发明人： Douglas J. Cutter ,  Kurt D. Beigel ,  Fan Ho

IPC分类号： H01H3776

CPC分类号： G11C29/785 ,  G11C17/18 ,  G11C29/83

摘要： A programmable circuit includes a first node and provides a programmed signal based on the state of the first node. A first anti-fuse has a programmed state and an unprogrammed state and couples the first node to a first power supply when in the programmed state and decouples the first node from the first power supply when in the unprogrammed state. A second anti-fuse has a programmed state and an unprogrammed state and couples the first node to a second power supply when in the programmed state and decouples the first node from the second power supply when in the unprogrammed state. The state of the programmed signal can be used to replace a primary circuit element of an integrated circuit with a redundant circuit element.

公开(公告)号：US06444558B1

公开(公告)日：2002-09-03

申请号：US09130781

申请日：1998-08-07

申请人： Douglas J. Cutter ,  Fan Ho ,  Kurt D. Beigel

发明人： Douglas J. Cutter ,  Fan Ho ,  Kurt D. Beigel

IPC分类号： H01L2900

CPC分类号： H01L23/5252 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and apparatus for forming a junctionless antifuse semiconductor structure comprises forming an antifuse in non-active areas of a semiconductor wafer. In one embodiment, the antifuse is formed over a polysilicon layer, which is coupled to a field oxide layer. In a further embodiment, the polysilicon layer comprises a bottom conductor layer in the antifuse. In another embodiment, a refractory metal silicide layer is formed between the polysilicon layer and the antifuse. In yet a further embodiment, the refractory metal silicide layer comprises the bottom conductor layer in the antifuse.

摘要翻译： 用于形成无连接反熔丝半导体结构的方法和装置包括在半导体晶片的非有源区域中形成反熔丝。 在一个实施例中，反熔丝形成在多晶硅层上，多晶硅层与场氧化物层耦合。 在另一实施例中，多晶硅层包括反熔丝中的底部导体层。 在另一个实施例中，在多晶硅层和反熔丝之间形成难熔金属硅化物层。 在又一个实施例中，难熔金属硅化物层包括反熔丝中的底部导体层。

公开(公告)号：US6154398A

公开(公告)日：2000-11-28

申请号：US896702

申请日：1997-07-18

申请人： Douglas J. Cutter ,  Kurt D. Beigel ,  Fan Ho

发明人： Douglas J. Cutter ,  Kurt D. Beigel ,  Fan Ho

IPC分类号： G11C17/18 ,  G11C29/00 ,  G11C7/00

CPC分类号： G11C29/785 ,  G11C17/18 ,  G11C29/83

摘要： A programmable circuit includes a first node and provides a programmed signal based on the state of the first node. A first anti-fuse has a programmed state and an unprogrammed state and couples the first node to a first power supply when in the programmed state and decouples the first node from the first power supply when in the unprogrammed state. A second anti-fuse has a programmed state and an unprogrammed state and couples the first node to a second power supply when in the programmed state and decouples the first node from the second power supply when in the unprogrammed state. The state of the programmed signal can be used to replace a primary circuit element of an integrated circuit with a redundant circuit element.

公开(公告)号：US6023431A

公开(公告)日：2000-02-08

申请号：US724851

申请日：1996-10-03

申请人： Douglas J. Cutter ,  Kurt D. Beigel ,  Fan Ho

发明人： Douglas J. Cutter ,  Kurt D. Beigel ,  Fan Ho

IPC分类号： G11C17/18 ,  G11C29/00 ,  G11C7/00

CPC分类号： G11C29/785 ,  G11C17/18 ,  G11C29/83

摘要： A programmable circuit includes a first node and provides a programmed signal based on the state of the first node. A first anti-fuse has a programmed state and an unprogrammed state and couples the first node to a first power supply when in the programmed state and decouples the first node from the first power supply when in the unprogrammed state. A second anti-fuse has a programmed state and an unprogrammed state and couples the first node to a second power supply when in the programmed state and decouples the first node from the second power supply when in the unprogrammed state. The state of the programmed signal can be used to replace a primary circuit element of an integrated circuit with a redundant circuit element.