摘要:
Method and apparatus are disclosed for checking the resistance of antifuse elements in an integrated circuit. A voltage based on the resistance of an antifuse element is compared to a voltage based on a known resistance, and an output signal is generated whose binary value indicates whether the resistance of the antifuse element is higher or lower than the known value of resistance. The method and apparatus are useful in verifying the programming of antifuse elements.
摘要:
Method and apparatus are disclosed for checking the resistance of antifuse elements in an integrated circuit. A voltage based on the resistance of an antifuse element is compared to a voltage based on a known resistance, and an output signal is generated whose binary value indicates whether the resistance of the antifuse element is higher or lower than the known value of resistance. The method and apparatus are useful in verifying the programming of antifuse elements.
摘要:
Method and apparatus are disclosed for checking the resistance of programmable circuits in an integrated circuit where each programmable circuit includes a programmable element, such as an antifuse. A precharged node is connected to the programmable element and the voltage at the node discharges based on the resistance of the programmable element. An output signal is produced whose binary value is based on the voltage at the node after a sufficient time has elapsed to allow the initial voltage to discharge based on the resistance of the programmable element.
摘要:
Method and apparatus are disclosed for reducing antifuse programming time by connecting the programming voltage to the electrode of the antifuse element that has roughened polysilicon.
摘要:
An integrated circuit memory device has a plurality of nonvolatile programmable elements which are used to store a pass/fail status bit at selected milestones in a test sequence. At selected points in the test process an element may be programmed to indicate that the device has passed the tests associated with the selected point in the process. Prior to performing further tests on the device, the element is read to verify that it passed previous tests in the test process. If the appropriate elements are not programmed, the device is rejected. A rejected device may be retested according to the previous test steps. Laser fuses, electrically programmable fuses or antifuses are used to store test results. The use of electrically writeable nonvolatile memory elements allows for programming of the elements after the device has been packaged.
摘要:
An integrated circuit memory device has a plurality of nonvolatile programmable elements which are used to store a pass/fail status bit at selected milestones in a test sequence. At selected points in the test process an element may be programmed to indicate that the device has passed the tests associated with the selected point in the process. Prior to performing further tests on the device, the element is read to verify that it passed previous tests in the test process. If the appropriate elements are not programmed, the device is rejected. A rejected device may be retested according to the previous test steps. Laser fuses, electrically programmable fuses or antifuses are used to store test results. The use of electrically writeable nonvolatile memory elements allows for programming of the elements after the device has been packaged.
摘要:
An antifuse bank includes a bank of self-decoupling anti fuse circuits. The anti fuse circuits are programmed according to a pattern of address bits by blowing antifuses corresponding to bits of the address. The antifuses are blown by applying a high voltage across the antifuse. As each antifuse is blown, its resistance drops and current through the antifuse increases. The self-decoupling circuit detects the increased current flow and, when the anti fuse resistance is sufficiently low, limits current flow through the anti fuse. The antifuse thus does not load the high voltage source as other antifuses are blown.
摘要:
An antifuse bank includes a bank of self-decoupling antifuse circuits. The antifuse circuits are programmed according to a pattern of address bits by blowing antifuses corresponding to bits of the address. The antifuses are blown by applying a high voltage across the antifuse. As each antifuse is blown, its resistance drops and current through the antifuse increases. The self-decoupling circuit detects the increased current flow and, when the antifuse resistance is sufficiently low, limits current flow through the antifuse. The antifuse thus does not load the high voltage source as other antifuses are blown.
摘要:
A submicron-width fuse element is disclosed that protects peripheral DRAM chip devices from low current failures below the range of metal fuse elements. In a specific application, the fuse elements are used to protect a DRAM chip from dielectric failure of voltage supply filtering capacitors. A low cross-section and length allows minimum space for the element.
摘要:
A method of verifying whether unprogrammed antifuses are leaky in a semiconductor memory. The method involves the steps of: connecting the antifuse in series with a node; providing current to the node, the current being sufficient to charge the node from a first to a second voltage; detecting whether the voltage at the node charges to the second voltage, or remains at the first voltage to indicate that the antifuse is leaky; outputting signals indicating the result of the detection; and detecting the voltage at the node remains at the first voltage indicates that the antifuse is leaky. In another embodiment, a method of verifying whether antifuses have been programmed properly in a semiconductor memory. The method includes the steps of: connecting the antifuse in series with a node; providing current to the node through a parallel combination of a first transistor and a second transistor that is sufficient to charge the node from a first voltage to a second voltage; and detecting whether the voltage at the node charges to the second voltage or remains at the first voltage to indicate that the antifuse is programmed properly; outputting first and second signals indicating the result of the detection; and detecting the voltage at the node remains at the first voltage indicates that the antifuse is programmed properly.