公开(公告)号：US20200240000A1

公开(公告)日：2020-07-30

申请号：US16756337

申请日：2018-10-09

Applicant: Drexel University

Inventor： Zongquan GU ,  Babak ANASORI ,  Andrew Lewis BENNETT-JACKSON ,  Matthias FALMBIGL ,  Dominic IMBRENDA ,  Yury GOGOTSI ,  Jonathan E. SPANIER

IPC: C23C14/08 ,  C23C16/40 ,  C23C14/58 ,  C23C16/455 ,  C23C16/56 ,  H01L49/02 ,  C23C16/32 ,  C23C14/06 ,  C23C16/02 ,  C23C14/02

Abstract: The present disclosure is directed to using MXene compositions as templates for the deposition of oriented perovskite films, and compositions derived from such methods. Certain specific embodiments include methods preparing an oriented perovskite, perovskite-type, or perovskite-like film, the methods comprising: (a) depositing at least one perovskite, perovskite-type, or perovskite-like composition or precursor composition using chemical vapor deposition (CVD), physical vapor deposition (PVD), or atomic layer deposition (ALD) onto a film or layer of a MXene composition supported on a substrate to form a layered composition or precursor composition; and either (b) (1) heat treating or annealing the layered precursor composition to form a layered perovskite-type structure comprising at least one oriented perovskite, perovskite-type, or perovskite-like composition; or (2) annealing the layered composition; or (3) both (1) and (2).

公开(公告)号：US20240312711A1

公开(公告)日：2024-09-19

申请号：US18547015

申请日：2022-02-18

Applicant: DREXEL UNIVERSITY ,  BAR-ILAN UNIVERSITY

Inventor： Matthias FALMBIGL ,  Iryna S. GOLOVINA ,  Christopher J. HAWLEY ,  Aleksandr V. PLOKHIKH ,  Or SHAFIR ,  Ilya GRINBERG ,  Jonathan E. SPANIER

IPC: H01G4/12 ,  H01G4/33 ,  H01G7/06

CPC classification number: H01G4/1227 ,  H01G4/33 ,  H01G7/06

Abstract: Disclosed herein are thin films and methods of forming thin films. An example thin film may comprise Ba—Ti—O configured to exhibit a structure where a distance of one or more neighboring Ti—Ti atoms is less than 3 Å.

公开(公告)号：US20220246714A1

公开(公告)日：2022-08-04

申请号：US17607726

申请日：2020-04-29

Applicant: Drexel University ,  THE PENN STATE RESEARCH FOUNDATION

Inventor： Jonathan E. SPANIER ,  Aleksandr V. PLOKHIKH ,  Matthias FALMBIGL ,  Roman ENGEL-HERBERT ,  Jason LAPANO ,  Iryna S. GOLOVINA

IPC: H01L49/02 ,  H01L21/02

Abstract: The present disclosure provides a layering structure that permits integration of epitaxially oriented perovskite oxides, such as bismuth ferrite (BiFeO3), epitaxially oriented barium titanate (BaTiO3), epitaxially oriented (SrTiO3), or their superstructures (BTO/STO) or solid solutions, onto a Si substrate through a perovskite buffer layer. The structure can retain thermal process-sensitive dopant positions and other thermal process window-sensitive features through atomic layer deposition of an oxide perovskite. Also provided are methods of preparing these layered structures.