公开(公告)号：US11069563B2

公开(公告)日：2021-07-20

申请号：US16814560

申请日：2020-03-10

Applicant: EBARA CORPORATION

Inventor： Atsuo Katagiri ,  Itsuki Kobata

IPC: H01L21/768 ,  H01L21/321 ,  H01L21/3105

Abstract: Planarization is performed on heterogeneous films with high accuracy. According to one embodiment, a method for processing a substrate is provided. The substrate is formed of an insulating film layer where a groove is formed, a barrier metal layer, and a wiring metal layer in order from a bottom in at least a part of a region. The method includes (3) while the wiring metal layer, the barrier metal layer, and the insulating film layer are exposed to the surface of the substrate: a step of bringing the surface of the substrate into contact with a catalyst; a step of supplying a process liquid between the catalyst and the surface of the substrate; and a step of flowing a current between the catalyst and the surface of the substrate.

公开(公告)号：US20200294847A1

公开(公告)日：2020-09-17

申请号：US16814560

申请日：2020-03-10

Applicant: EBARA CORPORATION

Inventor： Atsuo Katagiri ,  Itsuki Kobata

IPC: H01L21/768 ,  H01L21/3105 ,  H01L21/321

Abstract: Planarization is performed on heterogeneous films with high accuracy. According to one embodiment, a method for processing a substrate is provided. The substrate is formed of an insulating film layer where a groove is formed, a barrier metal layer, and a wiring metal layer in order from a bottom in at least a part of a region. The method includes (3) while the wiring metal layer, the barrier metal layer, and the insulating film layer are exposed to the surface of the substrate: a step of bringing the surface of the substrate into contact with a catalyst; a step of supplying a process liquid between the catalyst and the surface of the substrate; and a step of flowing a current between the catalyst and the surface of the substrate.

公开(公告)号：US20210187685A1

公开(公告)日：2021-06-24

申请号：US17132573

申请日：2020-12-23

Applicant: EBARA CORPORATION

Inventor： Atsuo Katagiri ,  Itsuki Kobata

IPC: B24B1/00 ,  H01L21/306 ,  H01L21/67 ,  H01L21/3105 ,  H01L21/321

Abstract: A substrate processing apparatus comprising: a stage for holding a substrate with a surface to be processed upward; a catalyst holding head for holding a catalyst to process the surface to be processed of the substrate; a pushing mechanism for pushing the catalyst holding head against the surface to be processed of the substrate; a swing mechanism for swinging the catalyst holding head in a radial direction of the substrate; and a pushing force control unit configured to adjust a pushing force of the catalyst holding head by the pushing mechanism according to a position of the catalyst holding head or a contact area between the substrate and the catalyst when the catalyst projects to outside the substrate by the swing of the catalyst holding head.

公开(公告)号：US20210265176A1

公开(公告)日：2021-08-26

申请号：US17180394

申请日：2021-02-19

Applicant: EBARA CORPORATION

Inventor： Atsuo Katagiri ,  Itsuki Kobata

IPC: H01L21/67

Abstract: A substrate processing apparatus includes a stage for holding a wafer, a catalyst processing member for processing the surface of the wafer using a catalyst, a pressing mechanism for pressing the catalyst processing member against the wafer, a relative motion mechanism for causing the catalyst processing member and the wafer to make a relative movement, and a supply mechanism for supplying a process liquid to the surface the wafer. The catalyst processing member has a processing surface opposed to the wafer, and includes a base material on which a groove is formed on the processing surface and the catalyst. The processing surface of the base material includes a plurality of regions sectioned by the groove. The catalyst processing member holds different types of catalysts in the plurality of regions.