公开(公告)号：US20230054026A1

公开(公告)日：2023-02-23

申请号：US17891832

申请日：2022-08-19

申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

发明人： Hyun Wook JUNG ,  Seong II KIM ,  Hae Cheon KIM ,  Youn Sub NOH ,  Ho Kyun AHN ,  Sang Heung LEE ,  Jong Won LIM ,  Sung Jae CHANG ,  II Gyu CHOI

IPC分类号： H01L29/778 ,  H01L29/66 ,  H01L29/423 ,  H01L29/40

摘要： Provided are a nitride-based high electron mobility transistor having enhanced frequency characteristics and an improved structural stability and manufacturing method thereof. The nitride-based high electron mobility transistor includes a first semiconductor layer and a second semiconductor layer sequentially formed on a substrate, source drain electrodes formed on the second semiconductor layer, a first insulating film formed on the second semiconductor layer and having an opening, a dielectric formed on the first insulating film to surround the opening of the first insulating film, a second insulating film formed on an inner sidewall of the dielectric, and a gate electrode formed on the dielectric to fill the opening of the first insulating film and inside the inner sidewall of the dielectric. A width of the inner sidewall at a bottom end of the dielectric is smaller than a width of the inner sidewall at a top end of the dielectric.

公开(公告)号：US20220285244A1

公开(公告)日：2022-09-08

申请号：US17562587

申请日：2021-12-27

申请人： Electronics and Telecommunications Research Institute

发明人： Il Gyu CHOI ,  Seong Il KIM ,  Hae Cheon KIM ,  Youn Sub NOH ,  Ho Kyun AHN ,  Sang Heung LEE ,  Jong Won LIM ,  Sung Jae CHANG ,  Hyun Wook JUNG

IPC分类号： H01L23/373

摘要： The present invention improves a heat dissipation property of a semiconductor device by transferring hexagonal boron nitride (hBN) with a two-dimensional nanostructure to the semiconductor device. A semiconductor device of the present invention includes a substrate having a first surface and a second surface, a semiconductor layer formed on the first surface of the substrate, an hBN layer formed on at least one surface of the first surface and the second surface of the substrate, and a heat sink positioned on the second surface of the substrate. A radiation rate of heat generated during driving of an element is increased to decrease a reduction in lifetime of a semiconductor device due to a temperature increase. The semiconductor device has a structure and configuration which are very effective in improving a rapid temperature increase due to heat generated by high-power semiconductor devices.