公开(公告)号：US20130293295A1

公开(公告)日：2013-11-07

申请号：US13832452

申请日：2013-03-15

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Youn Sub NOH ,  In Bok YOM ,  Dong Pil CHANG ,  Hong Gu JI

IPC: H03F3/60

CPC classification number: H03F3/602 ,  H03F1/0288 ,  H03F2200/192

Abstract: Provided is a compact RF power amplifier including: a Doherty amplifier comprising a carrier amplifier comprising a first input impedance matching unit, a first amplifier, and a first output impedance matching unit, and a peaking amplifier comprising a second input impedance matching unit, a second amplifier, and a second output impedance matching unit, in which when a power level of the first RF amplified signal reaches a predetermined power level, the peaking amplifier outputs the second RF amplified signal.

Abstract translation: 提供了一种紧凑的RF功率放大器，包括：Doherty放大器，包括载波放大器，该载波放大器包括第一输入阻抗匹配单元，第一放大器和第一输出阻抗匹配单元，以及峰值放大器，包括第二输入阻抗匹配单元， 放大器和第二输出阻抗匹配单元，其中当第一RF放大信号的功率电平达到预定功率电平时，峰值放大器输出第二RF放大信号。

公开(公告)号：US20230054026A1

公开(公告)日：2023-02-23

申请号：US17891832

申请日：2022-08-19

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Hyun Wook JUNG ,  Seong II KIM ,  Hae Cheon KIM ,  Youn Sub NOH ,  Ho Kyun AHN ,  Sang Heung LEE ,  Jong Won LIM ,  Sung Jae CHANG ,  II Gyu CHOI

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/423 ,  H01L29/40

Abstract: Provided are a nitride-based high electron mobility transistor having enhanced frequency characteristics and an improved structural stability and manufacturing method thereof. The nitride-based high electron mobility transistor includes a first semiconductor layer and a second semiconductor layer sequentially formed on a substrate, source drain electrodes formed on the second semiconductor layer, a first insulating film formed on the second semiconductor layer and having an opening, a dielectric formed on the first insulating film to surround the opening of the first insulating film, a second insulating film formed on an inner sidewall of the dielectric, and a gate electrode formed on the dielectric to fill the opening of the first insulating film and inside the inner sidewall of the dielectric. A width of the inner sidewall at a bottom end of the dielectric is smaller than a width of the inner sidewall at a top end of the dielectric.

公开(公告)号：US20220285244A1

公开(公告)日：2022-09-08

申请号：US17562587

申请日：2021-12-27

Applicant: Electronics and Telecommunications Research Institute

Inventor： Il Gyu CHOI ,  Seong Il KIM ,  Hae Cheon KIM ,  Youn Sub NOH ,  Ho Kyun AHN ,  Sang Heung LEE ,  Jong Won LIM ,  Sung Jae CHANG ,  Hyun Wook JUNG

IPC: H01L23/373

Abstract: The present invention improves a heat dissipation property of a semiconductor device by transferring hexagonal boron nitride (hBN) with a two-dimensional nanostructure to the semiconductor device. A semiconductor device of the present invention includes a substrate having a first surface and a second surface, a semiconductor layer formed on the first surface of the substrate, an hBN layer formed on at least one surface of the first surface and the second surface of the substrate, and a heat sink positioned on the second surface of the substrate. A radiation rate of heat generated during driving of an element is increased to decrease a reduction in lifetime of a semiconductor device due to a temperature increase. The semiconductor device has a structure and configuration which are very effective in improving a rapid temperature increase due to heat generated by high-power semiconductor devices.

公开(公告)号：US20150137877A1

公开(公告)日：2015-05-21

申请号：US14308931

申请日：2014-06-19

Applicant: Electronics and Telecommunications Research Institute

Inventor： Yun Ho CHOI ,  Youn Sub NOH ,  Hong Gu JI ,  Jin Cheol JEONG ,  In Bok YOM

IPC: G05F3/16

CPC classification number: G05F3/16 ,  G05F3/205

Abstract: Provided is a bias circuit. The bias circuit includes: a first resistor connected between a ground terminal and a first node; a first bias transistor having a drain connected to the first node and a source connected to a second node; a second bias transistor having a drain connected to the second node and a source connected to a negative voltage terminal; a third bias transistor having a drain connected to the ground terminal and a source connected to a third node; and a second resistor connected between the third node and the negative voltage terminal, wherein a gate of the first bias transistor is connected to the second node; a gate of the second bias transistor is connected to the negative voltage terminal; a gate of the third bias transistor is connected to the first node; and a gate bias voltage signal is outputted through the third node.

Abstract translation: 提供偏置电路。 偏置电路包括：连接在接地端子和第一节点之间的第一电阻器; 具有连接到第一节点的漏极和连接到第二节点的源极的第一偏置晶体管; 具有连接到第二节点的漏极和连接到负电压端子的源极的第二偏置晶体管; 具有连接到所述接地端子的漏极和连接到第三节点的源极的第三偏置晶体管; 以及连接在所述第三节点和所述负电压端子之间的第二电阻器，其中所述第一偏置晶体管的栅极连接到所述第二节点; 第二偏置晶体管的栅极连接到负电压端子; 第三偏置晶体管的栅极连接到第一节点; 并且通过第三节点输出栅极偏置电压信号。

公开(公告)号：US20150035623A1

公开(公告)日：2015-02-05

申请号：US14450374

申请日：2014-08-04

Applicant: Electronics and Telecommunications Research Institute

Inventor： Chang Soo KWAK ,  Youn Sub NOH ,  Man Seok UHM ,  So Hyeun YUN ,  Hong Yeol LEE ,  In Bok YOM

IPC: H01P1/20

CPC classification number: H01P1/207 ,  H01P1/205 ,  H01P1/2053 ,  H01P7/06

Abstract: A tunable filter device that changes a central frequency and a bandwidth is provided. The tunable filter device may include a body forming a cavity together with a cover, a resonator attached to or integrally formed on a lower surface of the cavity, a frequency-tuning element including a head and a shaft, the shaft passed through the cover and inserted in the resonator, and a cam disposed on the head to contact the head, wherein an insertion length of the shaft is controlled by the cam.

Abstract translation: 提供了改变中心频率和带宽的可调谐滤波器装置。 可调滤波器装置可以包括与盖一起形成空腔的主体，附接到腔体的下表面上或整体地形成在腔的下表面上的谐振器，包括头部和轴的频率调谐元件，轴穿过盖子， 插入在谐振器中，以及设置在头部上以接触头部的凸轮，其中轴的插入长度由凸轮控制。