公开(公告)号：US20150349736A1

公开(公告)日：2015-12-03

申请号：US14666163

申请日：2015-03-23

申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

发明人： Sang Heung LEE ,  Dong Min KANG ,  SEONG IL KIM ,  Ho Kyun AHN ,  Hyung Sup YOON ,  Jong Won LIM ,  Chull Won JU

IPC分类号： H03G1/00 ,  H04Q11/00 ,  H03F3/16

CPC分类号： H03G1/0088 ,  H03F1/083 ,  H03F3/08 ,  H03F2200/153 ,  H03G3/12

摘要： Provided herein is a feedback amplifier including an amplifier circuit configured to amplify an input signal input from an input terminal and output the amplified input signal to an output terminal; a feedback circuit configured to apply a feedback resistance value to a signal output to the output terminal, and to control a gain of the amplifier circuit by adjusting the input signal by a bias voltage applied with a feedback resistance value determined; a packet signal sensor configured to generate a fixed resistance control signal for controlling a fixed resistance value included in the feedback resistance value through a comparison between the output from the output terminal with a minimum signal level; and a fixed resistance controller configured to control the fixed resistance value included in the feedback resistance value in response to the fixed resistance control signal.

摘要翻译： 本文提供了一种反馈放大器，包括：放大器电路，被配置为放大从输入端输入的输入信号，并将放大的输入信号输出到输出端; 反馈电路，被配置为向输出端子输出的信号施加反馈电阻值，并且通过利用所确定的反馈电阻值施加的偏置电压来调节所述输入信号来控制所述放大器电路的增益; 分组信号传感器，被配置为通过比较来自所述输出端子的输出与最小信号电平之间的比较，产生用于控制所述反馈电阻值中包括的固定电阻值的固定电阻控制信号; 以及固定电阻控制器，其被配置为响应于所述固定电阻控制信号来控制包括在所述反馈电阻值中的所述固定电阻值。

公开(公告)号：US20150171188A1

公开(公告)日：2015-06-18

申请号：US14633984

申请日：2015-02-27

申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

发明人： Hyung Sup YOON ,  Byoung-Gue MIN ,  Jong-Won LIM ,  Hokyun AHN ,  Seong-Il Kim ,  Sang Heung LEE ,  Dong Min KANG ,  Chull Won JU ,  Jae Kyoung MUN

IPC分类号： H01L29/66 ,  H01L29/201 ,  H01L21/02 ,  H01L21/28 ,  H01L21/311 ,  H01L29/423 ,  H01L29/20 ,  H01L29/205

CPC分类号： H01L29/66462 ,  H01L21/02118 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/0254 ,  H01L21/28264 ,  H01L21/28593 ,  H01L21/31111 ,  H01L21/31144 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/404 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/778 ,  H01L29/7786

摘要： A field effect transistor is provided. The field effect transistor may include a capping layer on a substrate, a source ohmic electrode and a drain ohmic electrode on the capping layer, a first insulating layer and a second insulating layer stacked on the capping layer to cover the source and drain ohmic electrodes, a Γ-shaped gate electrode including a leg portion and a head portion, the leg portion being connected to the substrate between the source ohmic electrode and the drain ohmic electrode, and the head portion extending from the leg portion to cover a top surface of the second insulating layer, a first planarization layer on the second insulating layer to cover the Γ-shaped gate electrode, and a first electrode on the first planarization layer, the first electrode being connected to the source ohmic electrode or the drain ohmic electrode.

摘要翻译： 提供场效应晶体管。 场效应晶体管可以包括衬底上的覆盖层，覆盖层上的源欧姆电极和漏极欧姆电极，堆叠在覆盖层上以覆盖源极和漏极欧姆电极的第一绝缘层和第二绝缘层， 包括脚部和头部的栅格电极，所述脚部分连接到所述源欧姆电极和所述漏极欧姆电极之间的衬底，并且所述头部从所述腿部延伸以覆盖所述源极欧姆电极和所述漏极欧姆电极的顶表面 所述第二绝缘层，在所述第二绝缘层上覆盖所述栅格电极的第一平坦化层和所述第一平坦化层上的第一电极，所述第一电极连接到所述源欧姆电极或所述漏极欧姆电极。

公开(公告)号：US20230054026A1

公开(公告)日：2023-02-23

申请号：US17891832

申请日：2022-08-19

申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

发明人： Hyun Wook JUNG ,  Seong II KIM ,  Hae Cheon KIM ,  Youn Sub NOH ,  Ho Kyun AHN ,  Sang Heung LEE ,  Jong Won LIM ,  Sung Jae CHANG ,  II Gyu CHOI

IPC分类号： H01L29/778 ,  H01L29/66 ,  H01L29/423 ,  H01L29/40

摘要： Provided are a nitride-based high electron mobility transistor having enhanced frequency characteristics and an improved structural stability and manufacturing method thereof. The nitride-based high electron mobility transistor includes a first semiconductor layer and a second semiconductor layer sequentially formed on a substrate, source drain electrodes formed on the second semiconductor layer, a first insulating film formed on the second semiconductor layer and having an opening, a dielectric formed on the first insulating film to surround the opening of the first insulating film, a second insulating film formed on an inner sidewall of the dielectric, and a gate electrode formed on the dielectric to fill the opening of the first insulating film and inside the inner sidewall of the dielectric. A width of the inner sidewall at a bottom end of the dielectric is smaller than a width of the inner sidewall at a top end of the dielectric.

公开(公告)号：US20220285244A1

公开(公告)日：2022-09-08

申请号：US17562587

申请日：2021-12-27

申请人： Electronics and Telecommunications Research Institute

发明人： Il Gyu CHOI ,  Seong Il KIM ,  Hae Cheon KIM ,  Youn Sub NOH ,  Ho Kyun AHN ,  Sang Heung LEE ,  Jong Won LIM ,  Sung Jae CHANG ,  Hyun Wook JUNG

IPC分类号： H01L23/373

摘要： The present invention improves a heat dissipation property of a semiconductor device by transferring hexagonal boron nitride (hBN) with a two-dimensional nanostructure to the semiconductor device. A semiconductor device of the present invention includes a substrate having a first surface and a second surface, a semiconductor layer formed on the first surface of the substrate, an hBN layer formed on at least one surface of the first surface and the second surface of the substrate, and a heat sink positioned on the second surface of the substrate. A radiation rate of heat generated during driving of an element is increased to decrease a reduction in lifetime of a semiconductor device due to a temperature increase. The semiconductor device has a structure and configuration which are very effective in improving a rapid temperature increase due to heat generated by high-power semiconductor devices.

公开(公告)号：US20150236108A1

公开(公告)日：2015-08-20

申请号：US14328247

申请日：2014-07-10

申请人： Electronics and Telecommunications Research Institute

发明人： Seong Il KIM ,  Dong Min KANG ,  Sang Heung LEE ,  Ho Kyun AHN ,  Hyung Sup YOON ,  Byoung Gue MIN ,  Jong Won LIM

IPC分类号： H01L29/423 ,  H01L21/283 ,  H01L29/778

CPC分类号： H01L29/42312 ,  H01L21/28114 ,  H01L21/28587 ,  H01L21/28593 ,  H01L29/42316 ,  H01L29/66863 ,  H01L29/778 ,  H01L29/812

摘要： Disclosed are a semiconductor device having a stable gate structure, and a manufacturing method thereof, in which a gate structure is stabilized by additionally including a plurality of gate feet under a gate head in a width direction of the gate head so as to serve as supporters in a gate structure including a fine gate foot having a length of 0.2 μm or smaller, and the gate head having a predetermined size. Accordingly, it is possible to prevent the gate electrode of the semiconductor device from collapsing, and improve reliability of the semiconductor device during or after the process of the semiconductor device.

摘要翻译： 公开了一种具有稳定的栅极结构的半导体器件及其制造方法，其中通过在栅极头的宽度方向上的栅极头附近还包括多个栅极脚来稳定栅极结构，以作为支撑体 在包括具有0.2μm或更小的长度的精细栅极脚的栅极结构中，并且栅极头具有预定尺寸。 因此，可以防止半导体器件的栅电极塌陷，并且在半导体器件的处理期间或之后提高半导体器件的可靠性。

公开(公告)号：US20220131546A1

公开(公告)日：2022-04-28

申请号：US17513657

申请日：2021-10-28

申请人： Electronics And Telecommunications Research Institute ,  Korea Advanced Institute Of Science And Technology

发明人： Han Gil CHOI ,  Sang Heung LEE ,  Seong Hwan CHO

IPC分类号： H03L7/093 ,  H03L7/089 ,  H03L7/10

摘要： The present invention relates to a frequency modulation method based on a phase-locked loop capable of performing fast modulation independent of bandwidth.
A frequency modulation system based on a phase-locked loop capable of performing fast modulation independent of bandwidth according to the present invention includes a loop filter including a proportional path and an integral path to determine a bandwidth of a phase-locked loop, a voltage-controlled oscillator configured to adjust a frequency according to an output of the loop filter, and a slope alternator configured to alternate an input current of the loop filter, wherein the slope alternator is located in the integral path of the loop filter to generate an offset current at a moment of change from a modulation rise to a modulation fall.

公开(公告)号：US20150270822A1

公开(公告)日：2015-09-24

申请号：US14478295

申请日：2014-09-05

申请人： Electronics and Telecommunications Research Institute

发明人： Dong Min KANG ,  Seong Il KIM ,  Sang Heung LEE ,  Chull Won JU ,  Ho Kyun AHN ,  Hyung Sup YOON ,  Jong Won LIM

IPC分类号： H03H7/38

CPC分类号： H03H7/38 ,  H01L23/642 ,  H01L2224/49175 ,  H01P1/2039 ,  H01P5/12 ,  H05K1/025 ,  H05K2201/09781

摘要： Provided herein is a component package including a matching unit and a matching method thereof, the matching unit including: a substrate; a transmission line formed on the substrate, the transmission line being connected to a terminal of the component package; a bonding wire electrically connecting the transmission line and a central component; and a capacitor unit having a plurality of capacitors electrically connected with the transmission line by wiring connection, wherein an inductance of the matching unit is variable by adjusting a length of the bonding wire, and a capacitance of the matching unit is variable by increasing or reducing the number of capacitors electrically connected to the transmission line, of among the capacitors inside the capacitor unit, by extending or cutting off the wiring connection.

摘要翻译： 本文提供了一种包括匹配单元及其匹配方法的组件封装，所述匹配单元包括：衬底; 形成在所述基板上的传输线，所述传输线连接到所述部件封装的端子; 电连接所述传输线和中心部件的接合线; 以及具有通过布线连接与传输线电连接的多个电容器的电容器单元，其中匹配单元的电感通过调整接合线的长度而变化，并且匹配单元的电容可通过增加或减小而变化 通过延长或切断布线连接，在电容器单元内的电容器之间电连接到传输线的电容器的数量。

公开(公告)号：US20150194494A1

公开(公告)日：2015-07-09

申请号：US14243322

申请日：2014-04-02

申请人： Electronics and Telecommunications Research Institute

发明人： Ho Kyun AHN ,  Hae Cheon KIM ,  Zin Sig KIM ,  Sang Heung LEE ,  Byoung Gue MIN ,  Hyung Sup YOON ,  Dong Min KANG ,  Seong Il KIM ,  Jong Min LEE ,  Jong Won LIM ,  Yong Hwan KWON ,  Eun Soo NAM

IPC分类号： H01L29/40 ,  H01L29/66 ,  H01L21/28 ,  H01L21/283 ,  H01L29/78 ,  H01L29/423

CPC分类号： H01L29/402 ,  H01L21/283 ,  H01L21/28593 ,  H01L29/2003 ,  H01L29/42312 ,  H01L29/42356 ,  H01L29/66462 ,  H01L29/66477 ,  H01L29/7787

摘要： Disclosed are a field effect transistor for high voltage driving including a gate electrode structure in which a gate head extended in a direction of a drain is supported by a field plate embedded under a region of the gate head so as to achieve high voltage driving, and a manufacturing method thereof. Accordingly, the gate head extended in the direction of the drain is supported by the field plate electrically spaced by using an insulating layer, so that it is possible to stably manufacture a gate electrode including the extended gate head, and gate resistance is decreased by the gate head extended in the direction of the drain and an electric field peak value between the gate and the drain is decreased by the gate electrode including the gate head extended in the direction of the drain and the field plate proximate to the gate, thereby achieving an effect in that a breakdown voltage of a device is increased.

摘要翻译： 公开了一种用于高电压驱动的场效应晶体管，其包括栅极电极结构，其中在漏极方向上延伸的栅极头由嵌入在栅极头的区域内的场板支撑以实现高电压驱动，以及 其制造方法。 因此，在漏极方向上延伸的栅极头通过使用绝缘层而被电隔离的场板支撑，使得可以稳定地制造包括延伸栅极头的栅电极，并且栅极电阻通过 栅极头在漏极的方向上延伸，栅极和漏极之间的电场峰值由包括在漏极方向上延伸的栅极和靠近栅极的场板的栅电极减小，由此实现 效果是器件的击穿电压增加。