公开(公告)号：US11873224B2

公开(公告)日：2024-01-16

申请号：US17055405

申请日：2019-05-14

Applicant: ELEMENT SIX TECHNOLOGIES LIMITED

Inventor： Gruffudd Trefor Williams ,  Richard Stuart Balmer ,  Joseph Michael Dodson

IPC: C01B32/26 ,  C01B32/25 ,  C23C16/27 ,  C23C16/511 ,  C23C16/52

CPC classification number: C01B32/26 ,  C01B32/25 ,  C23C16/274 ,  C23C16/511 ,  C23C16/52 ,  C01P2006/32 ,  C01P2006/60 ,  C01P2006/90

Abstract: A polycrystalline CVD synthetic diamond material is provided that has an average thermal conductivity at room temperature through a thickness of the polycrystalline CVD synthetic diamond material of between 1700 and 2400 Wm−1K−1, a thickness of at least 2.5 mm and a visible transmittance through the thickness of the polycrystalline CVD synthetic diamond of at least 25%. A wafer comprising the material is also provided, wherein at least 70% of a total area of the wafer has the properties of the polycrystalline CVD synthetic diamond material. A method for fabricating the wafer is also disclosed.

公开(公告)号：US11913111B2

公开(公告)日：2024-02-27

申请号：US17597392

申请日：2020-03-26

Applicant: ELEMENT SIX TECHNOLOGIES LIMITED

Inventor： Gruffudd Trefor Williams ,  Richard Stuart Balmer

IPC: C23C16/27 ,  C23C16/01

CPC classification number: C23C16/278 ,  C23C16/01 ,  C23C16/274

Abstract: A method of fabricating a polycrystalline CVD synthetic diamond wafer is disclosed. A first polycrystalline CVD synthetic diamond wafer is grown using a CVD process to a first thickness on a substrate. A second smaller wafer is cut from the polycrystalline CVD synthetic diamond wafer. The second smaller wafer is located on a carrier, and further polycrystalline CVD synthetic diamond material is grown on the second smaller wafer to a second thickness to give a polycrystalline CVD synthetic diamond material having a total thickness of the combined first and second thicknesses.