Polycrystalline synthetic diamond material

    公开(公告)号:US11913111B2

    公开(公告)日:2024-02-27

    申请号:US17597392

    申请日:2020-03-26

    CPC classification number: C23C16/278 C23C16/01 C23C16/274

    Abstract: A method of fabricating a polycrystalline CVD synthetic diamond wafer is disclosed. A first polycrystalline CVD synthetic diamond wafer is grown using a CVD process to a first thickness on a substrate. A second smaller wafer is cut from the polycrystalline CVD synthetic diamond wafer. The second smaller wafer is located on a carrier, and further polycrystalline CVD synthetic diamond material is grown on the second smaller wafer to a second thickness to give a polycrystalline CVD synthetic diamond material having a total thickness of the combined first and second thicknesses.

    Electrochemical cell comprising electrically conductive diamond electrodes

    公开(公告)号:US11346012B2

    公开(公告)日:2022-05-31

    申请号:US16063637

    申请日:2016-11-25

    Abstract: An electrochemical cell for treating a fluid, the electrochemical cell comprising: at least two opposing electrodes defining a flow path for the fluid between the electrodes, where at least one of the electrodes is formed of electrically conductive diamond material; drive circuitry configured to apply a potential across the electrodes such that a current flows between the electrodes when the fluid is flowed through the flow path between the electrodes; and a housing in which the electrodes are disposed, the housing comprising pressure seals configured to containing the fluid within the fluid path and a support structure for supporting the electrodes, wherein the support structure and the pressure seals are configured such that the electrochemical cell has an operating pressure in a range 2 to 10 bar within which the electrodes are supported without fracturing and within which the fluid is contained within the flow path, wherein the electrodes are spaced apart by a distance in a range 0.5 mm to 4 mm, and wherein the drive circuitry is configured to apply a potential across the electrodes giving a current density ≥15,000 Amp/m2 over an electrode area of at least 20 cm2 for an operating voltage of no more than 20 V.

    METHOD OF MANUFACTURE OF SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL

    公开(公告)号:US20210285125A1

    公开(公告)日:2021-09-16

    申请号:US17258080

    申请日:2019-07-05

    Abstract: A method of manufacturing synthetic diamond material using a chemical vapour deposition process, and a diamond obtained by such a method are described. The method comprises providing a freestanding synthetic single crystal diamond substrate wafer having a dislocation density of at least 107 cm−2. The synthetic single crystal diamond substrate wafer is located over a substrate holder within a chemical vapour deposition reactor. Process gases are fed into the reactor, the process gases including a gas comprising carbon. Crack-free synthetic diamond material is grown on a surface of the single crystal diamond substrate wafer at a temperature of at least 900° C. to a thickness of at least 0.5 mm and with lateral dimensions of at least 4 mm by 4 mm.

    SYNTHETIC DIAMOND OPTICAL ELEMENTS

    公开(公告)号:US20210124092A1

    公开(公告)日:2021-04-29

    申请号:US16464376

    申请日:2017-12-12

    Abstract: An optical element comprising a window formed of synthetic diamond material and an optical surface pattern formed directly in a surface of the synthetic diamond material. The window of synthetic diamond material is in the form of a wedged diamond window with non-parallel major surfaces defining a wedge angle in a range (1) arcminute to 10° and the optical surface pattern is formed directly in one or both of the non-parallel major surfaces. There is also described a laser system comprising the optical element and a laser having a coherence length, wherein the coherence length of the laser is greater than twice a thickness of the wedged diamond window at its thickest point.

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