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公开(公告)号:US20240417884A1
公开(公告)日:2024-12-19
申请号:US18701674
申请日:2022-10-19
Applicant: Element Six Technologies Limited
Inventor: Benjamin Simon TRUSCOTT , Stephanie LIGGINS , Daniel James TWITCHEN , Douglas John GEEKIE , William Joseph HILLMAN
Abstract: A CVD single crystal diamond having a smallest linear dimension of no less than 3.5 mm, a concentration of single substitutional nitrogen atoms in their neutral charge state (Ns0), as measured by EPR, of between 20 and 250 ppb, a hue angle, hab, between 75 and 135°.
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公开(公告)号:US12065756B2
公开(公告)日:2024-08-20
申请号:US18143557
申请日:2023-05-04
Applicant: ELEMENT SIX TECHNOLOGIES LIMITED
Inventor: Ian Friel , Katharine Louise Atkinson , Daniel James Twitchen
CPC classification number: C30B25/205 , C30B25/105 , C30B25/16 , C30B29/04
Abstract: A method of manufacturing synthetic diamond material using a chemical vapour deposition process, and a diamond obtained by such a method are described. The method comprises providing a freestanding synthetic single crystal diamond substrate wafer having a dislocation density of at least 107 cm−2. The synthetic single crystal diamond substrate wafer is located over a substrate holder within a chemical vapour deposition reactor. Process gases are fed into the reactor, the process gases including a gas comprising carbon. Crack-free synthetic diamond material is grown on a surface of the single crystal diamond substrate wafer at a temperature of at least 900° C. to a thickness of at least 0.5 mm and with lateral dimensions of at least 4 mm by 4 mm.
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公开(公告)号:US11913111B2
公开(公告)日:2024-02-27
申请号:US17597392
申请日:2020-03-26
Applicant: ELEMENT SIX TECHNOLOGIES LIMITED
Inventor: Gruffudd Trefor Williams , Richard Stuart Balmer
CPC classification number: C23C16/278 , C23C16/01 , C23C16/274
Abstract: A method of fabricating a polycrystalline CVD synthetic diamond wafer is disclosed. A first polycrystalline CVD synthetic diamond wafer is grown using a CVD process to a first thickness on a substrate. A second smaller wafer is cut from the polycrystalline CVD synthetic diamond wafer. The second smaller wafer is located on a carrier, and further polycrystalline CVD synthetic diamond material is grown on the second smaller wafer to a second thickness to give a polycrystalline CVD synthetic diamond material having a total thickness of the combined first and second thicknesses.
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公开(公告)号:US11643750B2
公开(公告)日:2023-05-09
申请号:US17258080
申请日:2019-07-05
Applicant: ELEMENT SIX TECHNOLOGIES LIMITED
Inventor: Ian Friel , Katharine Louise Atkinson , Daniel James Twitchen
CPC classification number: C30B25/205 , C30B25/105 , C30B25/16 , C30B29/04
Abstract: A method of manufacturing synthetic diamond material using a chemical vapour deposition process, and a diamond obtained by such a method are described. The method comprises providing a freestanding synthetic single crystal diamond substrate wafer having a dislocation density of at least 107 cm−2. The synthetic single crystal diamond substrate wafer is located over a substrate holder within a chemical vapour deposition reactor. Process gases are fed into the reactor, the process gases including a gas comprising carbon. Crack-free synthetic diamond material is grown on a surface of the single crystal diamond substrate wafer at a temperature of at least 900° C. to a thickness of at least 0.5 mm and with lateral dimensions of at least 4 mm by 4 mm.
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公开(公告)号:US20220389611A1
公开(公告)日:2022-12-08
申请号:US17770918
申请日:2020-12-15
Applicant: ELEMENT SIX TECHNOLOGIES LIMITED
Inventor: GRUFFUDD TREFOR WILLIAMS , CHRISTOPHER JOHN HOWARD WORT
Abstract: A method of fabricating a CVD synthetic diamond material, the method comprising providing a compacted diamond carrier material consisting of compacted non-intergrown diamond particles substantially free of a second phase, and growing CVD synthetic diamond material on a surface of the compacted diamond carrier material. Composite diamond bodies made by the method are also described.
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公开(公告)号:US11346012B2
公开(公告)日:2022-05-31
申请号:US16063637
申请日:2016-11-25
Applicant: ELEMENT SIX TECHNOLOGIES LIMITED
IPC: C25B1/04 , C25B11/036 , C02F1/467 , C02F1/461 , C25B11/057
Abstract: An electrochemical cell for treating a fluid, the electrochemical cell comprising: at least two opposing electrodes defining a flow path for the fluid between the electrodes, where at least one of the electrodes is formed of electrically conductive diamond material; drive circuitry configured to apply a potential across the electrodes such that a current flows between the electrodes when the fluid is flowed through the flow path between the electrodes; and a housing in which the electrodes are disposed, the housing comprising pressure seals configured to containing the fluid within the fluid path and a support structure for supporting the electrodes, wherein the support structure and the pressure seals are configured such that the electrochemical cell has an operating pressure in a range 2 to 10 bar within which the electrodes are supported without fracturing and within which the fluid is contained within the flow path, wherein the electrodes are spaced apart by a distance in a range 0.5 mm to 4 mm, and wherein the drive circuitry is configured to apply a potential across the electrodes giving a current density ≥15,000 Amp/m2 over an electrode area of at least 20 cm2 for an operating voltage of no more than 20 V.
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公开(公告)号:US20210285125A1
公开(公告)日:2021-09-16
申请号:US17258080
申请日:2019-07-05
Applicant: ELEMENT SIX TECHNOLOGIES LIMITED
Inventor: IAN FRIEL , KATHARINE LOUISE ATKINSON , DANIEL JAMES TWITCHEN
Abstract: A method of manufacturing synthetic diamond material using a chemical vapour deposition process, and a diamond obtained by such a method are described. The method comprises providing a freestanding synthetic single crystal diamond substrate wafer having a dislocation density of at least 107 cm−2. The synthetic single crystal diamond substrate wafer is located over a substrate holder within a chemical vapour deposition reactor. Process gases are fed into the reactor, the process gases including a gas comprising carbon. Crack-free synthetic diamond material is grown on a surface of the single crystal diamond substrate wafer at a temperature of at least 900° C. to a thickness of at least 0.5 mm and with lateral dimensions of at least 4 mm by 4 mm.
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公开(公告)号:US20210124092A1
公开(公告)日:2021-04-29
申请号:US16464376
申请日:2017-12-12
Applicant: ELEMENT SIX TECHNOLOGIES LIMITED
Inventor: ALEXANDER CLARK MUHR
Abstract: An optical element comprising a window formed of synthetic diamond material and an optical surface pattern formed directly in a surface of the synthetic diamond material. The window of synthetic diamond material is in the form of a wedged diamond window with non-parallel major surfaces defining a wedge angle in a range (1) arcminute to 10° and the optical surface pattern is formed directly in one or both of the non-parallel major surfaces. There is also described a laser system comprising the optical element and a laser having a coherence length, wherein the coherence length of the laser is greater than twice a thickness of the wedged diamond window at its thickest point.
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公开(公告)号:US20210115591A1
公开(公告)日:2021-04-22
申请号:US17081341
申请日:2020-10-27
Applicant: ELEMENT SIX TECHNOLOGIES LIMITED
Inventor: HERMAN PHILIP GODFRIED , GEOFFREY ALAN SCARSBROOK , DANIEL JAMES TWITCHEN , EVERT PIETER HOUWMAN , WILHELMUS GERTRUDA MARIA NELISSEN , ANDREW JOHN WHITEHEAD , CLIVE EDWARD HALL , PHILIP MAURICE MARTINEAU
IPC: C30B29/04 , C30B25/20 , C30B33/02 , C01B32/25 , C01B32/26 , C30B25/02 , G02B1/00 , C30B9/00 , C30B19/02 , C30B25/16 , C30B33/12 , G02B1/02
Abstract: A CVD single crystal diamond material suitable for use in, or as, an optical device or element. It is suitable for use in a wide range of optical applications such as, for example, optical windows, laser windows, optical reflectors, optical refractors and gratings, and etalons. The CVD diamond material is produced by a CVD method in the presence of a controlled low level of nitrogen to control the development of crystal defects and thus achieve a diamond material having key characteristics for optical applications.
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10.
公开(公告)号:US20210054526A1
公开(公告)日:2021-02-25
申请号:US16065526
申请日:2016-12-06
Inventor: Wilbur LEW , Gregory BRUCE , Andrew Mark EDMONDS , Matthew Lee MARKHAM , Alastair Douglas STACEY , Harpreet Kaur DHILLON
Abstract: A single crystal diamond material comprising: neutral nitrogen-vacancy defects (NV0); negatively charged nitrogen-vacancy defects (NV−); and single substitutional nitrogen defects (Ns) which transfer their charge to the neutral nitrogen-vacancy defects (NV0) to convert them into the negatively charged nitrogen-vacancy defects (NV), characterized in that the single crystal diamond material has a magnetometry figure of merit (FOM) of at least 2, wherein the magnetometry figure of merit is defined by (I) where R is a ratio of concentrations of negatively charged nitrogen-vacancy defects to neutral nitrogen-vacancy defects ([NV−]/[NV0]), [NV−] is the concentration of negatively charged nitrogen-vacancy defects measured in parts-per-million (ppm) atoms of the single crystal diamond material, [NV0] is a concentration of neutral nitrogen-vacancy defects measured in parts-per-million (ppm) atoms of the single crystal diamond material, and T2′ is a decoherence time of the NV− defects, where T2′ is T2* for DC magnetometry or T2 for AC magnetometry.
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