公开(公告)号：US11239388B2

公开(公告)日：2022-02-01

申请号：US16725391

申请日：2019-12-23

Applicant: EPISTAR CORPORATION

Inventor： Meng-Yang Chen ,  Jung-Jen Li

IPC: H01L33/18 ,  H01L33/22 ,  H01L33/30 ,  H01L33/38 ,  H01L33/50 ,  H01L33/56 ,  H01L33/62 ,  H01L33/40

Abstract: A semiconductor device includes a first type semiconductor structure, an active structure, and a contact layer. The first type semiconductor structure includes a first lattice constant, a first side and a second side opposite to the first side. The active structure is on the first side of the first type semiconductor structure and emits a radiation, and the radiation has a peak wavelength between 1000 nm and 2000 nm. The contact layer is on the second side of the first type semiconductor structure and includes a second lattice constant. A difference between the first lattice constant and the second lattice constant is at least 0.5%.

公开(公告)号：US12057524B2

公开(公告)日：2024-08-06

申请号：US16728769

申请日：2019-12-27

Applicant: EPISTAR CORPORATION

Inventor： Meng-Yang Chen ,  Jung-Jen Li

IPC: H01L33/30 ,  H01L33/00

CPC classification number: H01L33/30 ,  H01L33/0062 ,  H01L2933/0033

Abstract: The present disclosure provides a semiconductor stack, a semiconductor device and a method for manufacturing the same. The semiconductor device includes a first semiconductor layer and a light-emitting structure. The first semiconductor layer includes a first III-V semiconductor material, a first dopant, and a second dopant. The light-emitting structure is on the first semiconductor layer and includes an active structure. In the first semiconductor layer, a concentration of the second dopant is higher than a concentration of the first dopant. The first dopant is carbon, and the second dopant is hydrogen.

公开(公告)号：US11251336B2

公开(公告)日：2022-02-15

申请号：US16725040

申请日：2019-12-23

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Kang Chen ,  Jung-Jen Li

IPC: H01L33/14 ,  H01L33/38 ,  H01L27/02 ,  H01L33/00 ,  H01L33/02

Abstract: A semiconductor device includes a semiconductor stack having a first-type semiconductor structure, an active structure, and a second-type semiconductor structure disposed on the first-type semiconductor structure. The second-type semiconductor structure has a doping concentration. A first portion includes a part of the first-type semiconductor structure, the active structure, and the second-type semiconductor structure, and has a current confining region. A second portion includes a part of the first-type semiconductor structure, the active structure, and the second-type semiconductor structure, and includes a first-type heavily doped region in the second-type semiconductor structure. The first-type heavily doped region includes a doping concentration higher than that of the second-type semiconductor structure.

公开(公告)号：US11233171B2

公开(公告)日：2022-01-25

申请号：US16729055

申请日：2019-12-27

Applicant: EPISTAR CORPORATION

Inventor： Meng-Yang Chen ,  Jung-Jen Li

IPC: H01L33/12 ,  H01L33/30 ,  H01L33/00

Abstract: The present disclosure provides a semiconductor device which includes a base layer and a buffer structure. The base layer includes a first semiconductor compound having a first lattice constant and including a plurality of elements, and an atomic radius of one of the plurality of elements which has the largest atomic radius is defined as a first atomic radius. The buffer structure includes a second semiconductor compound and a first additive. The second semiconductor compound has a second lattice constant and the first additive has a second atomic radius. The second lattice constant is larger than the first lattice constant, and the second atomic radius is larger than the first atomic radius.