公开(公告)号：US20200303377A1

公开(公告)日：2020-09-24

申请号：US16893348

申请日：2020-06-04

Applicant: National Applied Research Laboratories ,  EPISTAR Corporation

Inventor： Shih-Pang Chang ,  Guang-Li Luo ,  Szu-Hung Chen ,  Wen-Kuan Yeh ,  Jen-Inn Chyi ,  Meng-Yang Chen ,  Rong-Ren Lee ,  Shih-Chang Lee ,  Ta-Cheng Hsu

IPC: H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/16 ,  H01L29/20

Abstract: A method of making a semiconductor device includes: providing a substrate; forming an insulating layer on the substrate; forming a first trench in the insulating layer; forming a first semiconductor layer in the first trench; and removing a portion of the insulating layer to expose the first semiconductor layer.

公开(公告)号：US11837682B2

公开(公告)日：2023-12-05

申请号：US18075987

申请日：2022-12-06

Applicant: EPISTAR CORPORATION

Inventor： Meng-Yang Chen

IPC: H01L33/06 ,  H01L33/50 ,  H01L33/36 ,  H01L33/30 ,  H01L33/10 ,  H01L33/46

CPC classification number: H01L33/06 ,  H01L33/10 ,  H01L33/30 ,  H01L33/36 ,  H01L33/46 ,  H01L33/50

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure and a light-emitting structure. The light-emitting structure is located between the first semiconductor structure and the second semiconductor structure. The light-emitting structure includes a first multiple quantum well structure containing aluminum and a plurality of semiconductor stacks. Each of the semiconductor stacks is stacked by a well layer and a barrier layer. The light-emitting structure emits an incoherent light. The well layer and the barrier layer in each of the semiconductor stacks include the same quaternary semiconductor material which includes indium (In). The well layer has a first In content percentage larger than 0.53, and the barrier layer has a second In content percentage less than 0.53.

公开(公告)号：US10134735B2

公开(公告)日：2018-11-20

申请号：US15632391

申请日：2017-06-26

Applicant: National Applied Research Laboratories ,  EPISTAR Corporation

Inventor： Shih-Pang Chang ,  Guang-Li Luo ,  Szu-Hung Chen ,  Wen-Kuan Yeh ,  Jen-Inn Chyi ,  Meng-Yang Chen ,  Rong-Ren Lee ,  Shih-Chang Lee ,  Ta-Cheng Hsu

IPC: H01L27/092 ,  H01L29/20 ,  H01L29/16 ,  H01L21/8238

Abstract: A heterogeneously integrated semiconductor devices includes a base substrate; a Ge-containing film formed on the base substrate; a PMOSFET transistor having a first fin formed on the Ge-containing film; and a NMOSFET transistor having a second fin formed on the Ge-containing film; wherein the PMOSFET transistor and the NMOSFET transistor compose a CMOS transistor, and the first fin comprises Ge-containing material and the second fin comprises a Group III-V compound.

公开(公告)号：US12136683B2

公开(公告)日：2024-11-05

申请号：US18213304

申请日：2023-06-23

Applicant: EPISTAR CORPORATION

Inventor： Meng-Yang Chen ,  Yuan-Ting Lin

IPC: H01L33/00 ,  H01L33/04 ,  H01L33/10 ,  H01L33/30 ,  H01L33/62

Abstract: A semiconductor device is provided, which includes an active structure, a first semiconductor layer, a second semiconductor layer, an intermediate layer, a transition layer and a contact layer. The active structure has two sides and includes an active region. The first semiconductor layer and the second semiconductor layer respectively located on the two sides of the active structure. The intermediate layer is located between the second semiconductor layer and the active structure. The transition layer is located on the second semiconductor layer. The contact layer is located on the transition layer.

公开(公告)号：US11728456B2

公开(公告)日：2023-08-15

申请号：US17750232

申请日：2022-05-20

Applicant: EPISTAR CORPORATION

Inventor： Meng-Yang Chen ,  Yuan-Ting Lin

IPC: H01L33/00 ,  H01L33/04 ,  H01L33/62 ,  H01L33/30 ,  H01L33/10

CPC classification number: H01L33/002 ,  H01L33/04 ,  H01L33/10 ,  H01L33/305 ,  H01L33/62

Abstract: A semiconductor device is provided, which includes an active structure and a first semiconductor layer. The active structure includes an active region having a topmost surface and a bottommost surface, and a first dopant distributing from the topmost surface to the bottommost surface. The first semiconductor layer is located under the active structure and includes a second dopant. The active region includes a semiconductor material including As.

公开(公告)号：US11239388B2

公开(公告)日：2022-02-01

申请号：US16725391

申请日：2019-12-23

Applicant: EPISTAR CORPORATION

Inventor： Meng-Yang Chen ,  Jung-Jen Li

IPC: H01L33/18 ,  H01L33/22 ,  H01L33/30 ,  H01L33/38 ,  H01L33/50 ,  H01L33/56 ,  H01L33/62 ,  H01L33/40

Abstract: A semiconductor device includes a first type semiconductor structure, an active structure, and a contact layer. The first type semiconductor structure includes a first lattice constant, a first side and a second side opposite to the first side. The active structure is on the first side of the first type semiconductor structure and emits a radiation, and the radiation has a peak wavelength between 1000 nm and 2000 nm. The contact layer is on the second side of the first type semiconductor structure and includes a second lattice constant. A difference between the first lattice constant and the second lattice constant is at least 0.5%.

公开(公告)号：US20170373064A1

公开(公告)日：2017-12-28

申请号：US15632391

申请日：2017-06-26

Applicant: National Applied Research Laboratories ,  EPISTAR Corporation

Inventor： Shih-Pang Chang ,  Guang-Li Luo ,  Szu-Hung Chen ,  Wen-Kuan Yeh ,  Jen-Inn Chyi ,  Meng-Yang Chen ,  Rong-Ren Lee ,  Shih-Chang Lee ,  Ta-Cheng Hsu

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/16 ,  H01L29/20

CPC classification number: H01L27/0924 ,  H01L21/823821 ,  H01L29/16 ,  H01L29/161 ,  H01L29/20 ,  H01L29/66795 ,  H01L29/7853

Abstract: A heterogeneously integrated semiconductor devices includes a base substrate; a Ge-containing film formed on the base substrate; a PMOSFET transistor having a first fin formed on the Ge-containing film; and a NMOSFET transistor having a second fin formed on the Ge-containing film; wherein the PMOSFET transistor and the NMOSFET transistor compose a CMOS transistor, and the first fin comprises Ge-containing material and the second fin comprises a Group III-V compound.

公开(公告)号：US12057524B2

公开(公告)日：2024-08-06

申请号：US16728769

申请日：2019-12-27

Applicant: EPISTAR CORPORATION

Inventor： Meng-Yang Chen ,  Jung-Jen Li

IPC: H01L33/30 ,  H01L33/00

CPC classification number: H01L33/30 ,  H01L33/0062 ,  H01L2933/0033

Abstract: The present disclosure provides a semiconductor stack, a semiconductor device and a method for manufacturing the same. The semiconductor device includes a first semiconductor layer and a light-emitting structure. The first semiconductor layer includes a first III-V semiconductor material, a first dopant, and a second dopant. The light-emitting structure is on the first semiconductor layer and includes an active structure. In the first semiconductor layer, a concentration of the second dopant is higher than a concentration of the first dopant. The first dopant is carbon, and the second dopant is hydrogen.

公开(公告)号：US11515307B2

公开(公告)日：2022-11-29

申请号：US16893348

申请日：2020-06-04

Applicant: National Applied Research Laboratories ,  EPISTAR Corporation

Inventor： Shih-Pang Chang ,  Guang-Li Luo ,  Szu-Hung Chen ,  Wen-Kuan Yeh ,  Jen-Inn Chyi ,  Meng-Yang Chen ,  Rong-Ren Lee ,  Shih-Chang Lee ,  Ta-Cheng Hsu

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L29/16 ,  H01L29/20 ,  H01L29/161

Abstract: A method of making a semiconductor device includes: providing a substrate; forming an insulating layer on the substrate; forming a first trench in the insulating layer; forming a first semiconductor layer in the first trench; and removing a portion of the insulating layer to expose the first semiconductor layer.

公开(公告)号：US10727231B2

公开(公告)日：2020-07-28

申请号：US16159541

申请日：2018-10-12

Applicant: National Applied Research Laboratories ,  EPISTAR Corporation

Inventor： Shih-Pang Chang ,  Guang-Li Luo ,  Szu-Hung Chen ,  Wen-Kuan Yeh ,  Jen-Inn Chyi ,  Meng-Yang Chen ,  Rong-Ren Lee ,  Shih-Chang Lee ,  Ta-Cheng Hsu

IPC: H01L29/16 ,  H01L29/20 ,  H01L29/161 ,  H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238

Abstract: A heterogeneously integrated semiconductor device includes a substrate comprising a first material; a recess formed within the substrate and having a bottom portion with a first width, a top portion with a second width and a middle portion with a third width larger than the first width and the second width; and a first semiconductor layer filled in the bottom portion and including a second material different from the first material.