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1.发明申请公开(公告)号：US20130338834A1
公开(公告)日：2013-12-19
申请号：US13975563
申请日：2013-08-26
IPC分类号： G05D3/00
CPC分类号： G05D3/00 , B81C99/005 , H01L41/042
摘要： An apparatus and method for determining characterizing attributes of an actuator is provided. An actuator may be moved to a maximum capacitance position. At the maximum capacitance position, an initial measurement of the actuator capacitance is made. The actuator is moved a predetermined increment toward a first extreme position, and the actuator capacitance is again measured. If the capacitance changed by a threshold amount, the signal preceding the signal that caused the actuator to move is recorded as an approximate response curve end point, or the first extreme position. The actuator is again moved a predetermined increment toward a second extreme position. After each move, the capacitance is measured. If it is determined the capacitance did change by a threshold amount from the previously measured capacitance, the signal related to the previously measured capacitance is recorded as an approximate response curve end point, or the second extreme position.
摘要翻译： 提供了一种用于确定致动器的特征属性的装置和方法。 致动器可以移动到最大电容位置。 在最大电容位置，进行致动器电容的初始测量。 致动器朝向第一极限位置移动预定增量，并再次测量致动器电容。 如果电容变化了阈值，则将导致执行器移动的信号前面的信号记录为近似响应曲线终点或第一极限位置。 致动器再次向第二极限位置移动预定增量。 每次移动后，测量电容。 如果确定电容确实从先前测量的电容改变阈值量，则将与先前测量的电容相关的信号记录为近似响应曲线终点或第二极限位置。
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公开(公告)号：US20100308902A1
公开(公告)日：2010-12-09
申请号：US12762456
申请日：2010-04-19
IPC分类号： G05F1/10
摘要： A reference voltage generator circuit may include at least one MOS transistor and at least one bipolar transistor coupled together to provide an electrical path from an input reference potential to an output of the generator circuit. The electrical path may extend through a gate-to-source path of the MOS transistor and further through a base-to-emitter path of the bipolar transistor. The MOS transistor may be biased by a bias current that is proportional to T2·μ(T), where T represents absolute temperature and μ(T) represents mobility of a MOS transistor in the bias current generator. Optionally, the reference voltage generator may include N MOS and M multiple bipolar transistors (N≧1, M≧1), and the output reference voltage may be N*VGS+M*VBE as compared to the input reference potential.
摘要翻译： 参考电压发生器电路可以包括至少一个MOS晶体管和耦合在一起的至少一个双极晶体管，以提供从输入参考电位到发生器电路的输出的电路径。 电路可以延伸穿过MOS晶体管的栅极到源极的路径，并进一步穿过双极晶体管的基极到发射极的路径。 可以通过与T2·μ（T）成比例的偏置电流来偏置MOS晶体管，其中T表示绝对温度，μ（T）表示偏置电流发生器中MOS晶体管的迁移率。 可选地，参考电压发生器可以包括N个MOS和M个多极双极晶体管（N≥1，M≥1），并且与输入的参考电位相比，输出参考电压可以是N * VGS + M * VBE。
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公开(公告)号：US20110163811A1
公开(公告)日：2011-07-07
申请号：US12652442
申请日：2010-01-05
IPC分类号： H03F3/18
CPC分类号： H03F3/3023 , H03F2200/91 , H03F2203/30111
摘要： A system for a Class AB Amplifier output stage that includes a first push pull system connected to an output terminal including a first driving transistor coupled to the output terminal and a second push pull system connected to the output terminal including a second driving transistor coupled to the output terminal. The amplifier also includes a current mode amplifier where the current mode amplifier's output is coupled to the first driving transistor's gate. The amplifier further includes a pair of resistors, a first resistor coupled to a first input terminal of the current mode amplifier, a second resistor coupled to a second input terminal of the current mode amplifier and coupled to the second driving transistor.
摘要翻译： 一种用于AB类放大器输出级的系统，包括连接到输出端的第一推挽系统，所述第一推挽系统包括耦合到所述输出端子的第一驱动晶体管和连接到所述输出端子的第二推挽系统，所述第二推挽系统包括耦合到所述输出端 输出端子。 放大器还包括电流模式放大器，其中电流模式放大器的输出耦合到第一驱动晶体管的栅极。 放大器还包括一对电阻器，耦合到电流模式放大器的第一输入端子的第一电阻器，耦合到电流模式放大器的第二输入端子并耦合到第二驱动晶体管的第二电阻器。
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