SCHOTTKY-QUANTUM DOT PHOTODETECTORS AND PHOTOVOLTAICS
    3.
    发明申请
    SCHOTTKY-QUANTUM DOT PHOTODETECTORS AND PHOTOVOLTAICS 有权
    肖特品质光电照相机和照相机

    公开(公告)号:US20120180856A1

    公开(公告)日:2012-07-19

    申请号:US13235185

    申请日:2011-09-16

    IPC分类号: H01L31/0352 H01L31/07

    摘要: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.

    摘要翻译: 描述复合材料。 复合材料包括半导体纳米晶体和钝化半导体纳米晶体表面的有机分子。 有机分子的一个或多个性质有助于半导体纳米晶体之间的电荷转移。 描述了包括包括半导体纳米晶体的p型半导体材料的半导体材料。 半导体材料的至少一种性质导致半导体材料中的电子的迁移率大于或等于空穴的迁移率。 描述了包括包括半导体纳米晶体的n型半导体材料的半导体材料。 半导体材料的至少一种性质导致半导体材料中的空穴的迁移率大于或等于电子的迁移率。

    Schottky-quantum dot photodetectors and photovoltaics
    4.
    发明授权
    Schottky-quantum dot photodetectors and photovoltaics 有权
    肖特基量子点光电探测器和光伏

    公开(公告)号:US08759816B2

    公开(公告)日:2014-06-24

    申请号:US13235185

    申请日:2011-09-16

    IPC分类号: H01L29/06

    摘要: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.

    摘要翻译: 描述复合材料。 复合材料包括半导体纳米晶体和钝化半导体纳米晶体表面的有机分子。 有机分子的一个或多个性质有助于半导体纳米晶体之间的电荷转移。 描述了包括包括半导体纳米晶体的p型半导体材料的半导体材料。 半导体材料的至少一种性质导致半导体材料中的电子的迁移率大于或等于空穴的迁移率。 描述了包括包括半导体纳米晶体的n型半导体材料的半导体材料。 半导体材料的至少一种性质导致半导体材料中的空穴的迁移率大于或等于电子的迁移率。