公开(公告)号：US11935975B2

公开(公告)日：2024-03-19

申请号：US18074665

申请日：2022-12-05

申请人： UNIVERSITY OF SOUTH CAROLINA

发明人： Mathew Kelley ,  Andrew B. Greytak ,  Mvs Chandrashekhar ,  Joshua Letton

IPC分类号： H01L31/0352 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/0312 ,  H01L31/032 ,  H01L31/0336 ,  H01L31/07 ,  H01L31/108 ,  H01L31/18 ,  H10K30/00

CPC分类号： H01L31/035218 ,  H01L31/022408 ,  H01L31/03048 ,  H01L31/0312 ,  H01L31/0324 ,  H01L31/0336 ,  H01L31/07 ,  H01L31/108 ,  H01L31/18 ,  H01L31/1848 ,  H10K30/00

摘要： The present disclosure is directed to methods for producing a photovoltaic junction that can include coating a bare junction with a composition. In one embodiment, the composition includes a plurality of quantum dots to create a film; exposing the film to a ligand to create a first layer; coating the first layer with the composition to form a film on the first layer; and exposing the film on the first layer to the ligand to create a second layer.

公开(公告)号：US20230223485A1

公开(公告)日：2023-07-13

申请号：US18074665

申请日：2022-12-05

申请人： UNIVERSITY OF SOUTH CAROLINA

发明人： MATHEW KELLEY ,  ANDREW B. GREYTAK ,  MVS CHANDRASHEKHAR ,  JOSHUA LETTON

IPC分类号： H01L31/0352 ,  H01L31/18 ,  H01L31/0304 ,  H01L31/0224 ,  H01L31/032 ,  H01L31/07 ,  H01L31/108 ,  H01L31/0312 ,  H01L31/0336

CPC分类号： H01L31/035218 ,  H01L31/07 ,  H01L31/18 ,  H01L31/108 ,  H01L31/0312 ,  H01L31/0324 ,  H01L31/0336 ,  H01L31/1848 ,  H01L31/03048 ,  H01L31/022408 ,  H10K30/00

摘要： The present disclosure is directed to methods for producing a photovoltaic junction that can include coating a bare junction with a composition. In one embodiment, the composition includes a plurality of quantum dots to create a film; exposing the film to a ligand to create a first layer; coating the first layer with the composition to form a film on the first layer; and exposing the film on the first layer to the ligand to create a second layer.

公开(公告)号：US11652185B2

公开(公告)日：2023-05-16

申请号：US16529420

申请日：2019-08-01

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： Shinya Okamoto ,  Satoshi Yotsuhashi ,  Taku Hirasawa

IPC分类号： H01L31/10 ,  H01L31/108 ,  B82Y30/00 ,  H01L31/0224 ,  H01L31/07 ,  C25B1/04 ,  C25B1/55 ,  C25B9/19 ,  C25B9/73 ,  C25B11/081

CPC分类号： H01L31/108 ,  B82Y30/00 ,  C25B1/04 ,  C25B1/55 ,  C25B9/19 ,  C25B9/73 ,  C25B11/081 ,  H01L31/022408 ,  H01L31/07

摘要： An optical device includes an intermetallic compound of a first metal and a second metal having a lower work function than the first metal, or a solid-solution alloy of the first metal and the second metal and includes an n-type semiconductor in Schottky junction with the intermetallic compound or the solid-solution alloy.

公开(公告)号：US20190237556A1

公开(公告)日：2019-08-01

申请号：US16341055

申请日：2017-10-11

申请人： Idemitsu Kosan Co., Ltd.

发明人： Yuki TSURUMA ,  Emi KAWASHIMA ,  Yoshikazu NAGASAKI ,  Takashi SEKIYA ,  Yoshihiro UEOKA

IPC分类号： H01L29/47 ,  H01L27/146 ,  H01L29/78 ,  H01L29/812 ,  H01L29/872 ,  H01L31/07 ,  H01L31/108

CPC分类号： H01L29/47 ,  H01L27/146 ,  H01L29/78 ,  H01L29/812 ,  H01L29/872 ,  H01L31/07 ,  H01L31/10 ,  H01L31/108 ,  Y02E10/50

摘要： A structure including a metal oxide semiconductor layer and a noble metal oxide layer, wherein the metal oxide semiconductor layer and the noble metal oxide layer are adjacent to each other, and a film thickness of the noble metal oxide layer is more than 10 nm.

公开(公告)号：US20180315878A1

公开(公告)日：2018-11-01

申请号：US16028249

申请日：2018-07-05

申请人： International Business Machines Corporation

发明人： Talia S. Gershon ,  Supratik Guha ,  Oki Gunawan ,  Richard A. Haight ,  Yun Seog Lee

IPC分类号： H01L31/072 ,  H01L31/032 ,  H01L21/02 ,  H01L31/0392 ,  H01L31/07

CPC分类号： H01L31/072 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/0326 ,  H01L31/0327 ,  H01L31/0392 ,  H01L31/07 ,  Y02E10/50

摘要： Photovoltaic devices based on an Ag2ZnSn(S,Se)4 (AZTSSe) absorber and techniques for formation thereof are provided. In one aspect, a method for forming a photovoltaic device includes the steps of: coating a substrate with a conductive layer; contacting the substrate with an Ag source, a Zn source, a Sn source, and at least one of a S source and a Se source under conditions sufficient to form an absorber layer on the conductive layer having Ag, Zn, Sn, and at least one of S and Se; and annealing the absorber layer. Methods of doping the AZTSSe are provided. A photovoltaic device is also provided.

公开(公告)号：US20180182752A1

公开(公告)日：2018-06-28

申请号：US15799921

申请日：2017-10-31

申请人： SCHOTTKY LSI, INC.

发明人： AUGUSTINE WEI-CHUN CHANG

IPC分类号： H01L27/06 ,  H01L29/872 ,  H01L27/112 ,  H01L31/0376 ,  H01L27/11526 ,  H01L31/07 ,  H01L29/66 ,  H01L21/8238

CPC分类号： H01L27/0629 ,  H01L21/8238 ,  H01L25/065 ,  H01L27/0207 ,  H01L27/0727 ,  H01L27/105 ,  H01L27/10897 ,  H01L27/112 ,  H01L27/11253 ,  H01L27/11286 ,  H01L27/11293 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/11807 ,  H01L28/20 ,  H01L29/66143 ,  H01L29/872 ,  H01L31/032 ,  H01L31/0376 ,  H01L31/03762 ,  H01L31/07 ,  H01L31/072 ,  H01L31/074 ,  H01L2924/0002 ,  H03K19/17728 ,  Y02E10/50 ,  H01L2924/00

摘要： A low cost IC solution is disclosed to provide Super CMOS microelectronics macros. Hereinafter, the Super CMOS or Schottky CMOS all refer to SCMOS. The SCMOS device solutions with a niche circuit element, the complementary low threshold Schottky barrier diode pairs (SBD) made by selected metal barrier contacts (Co/Ti) to P- and N—Si beds of the CMOS transistors. A DTL like new circuit topology and designed wide contents of broad product libraries, which used the integrated SBD and transistors (BJT, CMOS, and Flash versions) as basic components. The macros include diodes that are selectively attached to the diffusion bed of the transistors, configuring them to form generic logic gates, memory cores, and analog functional blocks from simple to the complicated, from discrete components to all grades of VLSI chips. Solar photon voltaic electricity conversion and bio-lab-on-a-chip are two newly extended fields of the SCMOS IC applications.

公开(公告)号：US20180076405A1

公开(公告)日：2018-03-15

申请号：US15675337

申请日：2017-08-11

申请人： INVISAGE TECHNOLOGIES, INC

发明人： Edward Hartley Sargent ,  Ghada Koleilat ,  Larissa Levina

IPC分类号： H01L51/42 ,  H01L31/0384 ,  B82Y20/00 ,  B82Y30/00 ,  H01L31/032 ,  H01L51/44 ,  H01L31/07 ,  H01L31/0352 ,  H01L51/00

CPC分类号： H01L51/4213 ,  B82Y20/00 ,  B82Y30/00 ,  H01L31/0322 ,  H01L31/0324 ,  H01L31/0352 ,  H01L31/0384 ,  H01L31/07 ,  H01L51/0046 ,  H01L51/0084 ,  H01L51/441 ,  Y02E10/541 ,  Y02P70/521

摘要： A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.

公开(公告)号：US09660117B1

公开(公告)日：2017-05-23

申请号：US15269168

申请日：2016-09-19

申请人： Sharp Kabushiki Kaisha

发明人： James Andrew Robert Dimmock ,  Matthias Kauer ,  Nicholas J. Ekins-Daukes ,  Paul N. Stavrinou

IPC分类号： H01L31/00 ,  H01L31/0352 ,  H01L31/0232 ,  H01L31/108 ,  H01L31/0304 ,  H01L31/02 ,  H01L31/0216

CPC分类号： H01L31/035227 ,  H01L31/02 ,  H01L31/02161 ,  H01L31/02168 ,  H01L31/022408 ,  H01L31/022425 ,  H01L31/02327 ,  H01L31/03046 ,  H01L31/035209 ,  H01L31/07 ,  H01L31/108 ,  H01L31/1085 ,  Y02E10/50

摘要： A semiconductor device has a layered structure. The semiconductor device includes a metallic layer of thickness 1-100 nm, with a thickness optimized to absorb light in a wavelength range of operation. The device further includes an adjacent semiconductor layer additionally adjacent to an ohmic electrical contact, wherein the interface between the metallic layer and the semiconductor layer is electrically rectifying and energy selective. The device further includes a reflective back surface positioned opposite to the semiconductor layer relative to incident light providing broadband reflection in the wavelength range of operation. The semiconductor layer includes a quantum well adjacent to the metallic layer, wherein the energy selectivity is provided by the quantum well allowing charge carrier tunneling from the metallic layer. The device further may include an additional anti-reflection dielectric layer deposited on the metallic layer that is configured to minimize reflection of light in the wavelength range of operation.

公开(公告)号：US20160336474A1

公开(公告)日：2016-11-17

申请号：US15150824

申请日：2016-05-10

申请人： THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA

发明人： CHERIE R. KAGAN ,  AARON T. FAFARMAN ,  JI-HYUK CHOI ,  WEON-KYU KOH ,  DAVID K. KIM ,  SOONG JU OH ,  YUMING LAI ,  SUNG-HOON HONG ,  SANGAMESHWAR RAO SAUDARI ,  CHRISTOPHER B. MURRAY

IPC分类号： H01L31/07 ,  H01L31/032

CPC分类号： H01L31/07 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y40/00 ,  H01B1/06 ,  H01L29/0665 ,  H01L29/127 ,  H01L29/18 ,  H01L29/22 ,  H01L29/2203 ,  H01L29/24 ,  H01L29/413 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78681 ,  H01L31/0324 ,  H01L31/18 ,  Y02E10/50 ,  Y10S977/891 ,  Y10S977/938 ,  Y10S977/954

摘要： Methods of forming colloidal nanocrystal (NC)-based thin film devicesare disclosed. The methods include the steps of depositing a dispersion of NCs on a substrate to form a NC thin-film, wherein at least a portion of the NCs is capped with chalcogenocyanate (xCN)-based ligands; and doping the NC thin-film with a metal.

摘要翻译： 公开了形成胶体纳米晶体（NC）的薄膜器件的方法。 所述方法包括以下步骤：将NC分散体沉积在基底上以形成NC薄膜，其中至少部分NC用硫属异氰酸酯（xCN）为基础的配体封端; 并用金属掺杂NC薄膜。

公开(公告)号：US20160268467A1

公开(公告)日：2016-09-15

申请号：US14550167

申请日：2014-11-21

申请人： Massachusetts Institute of Technology

发明人： Jesse H Mills ,  Jeremy S. Coombs ,  Joshua L. Wilson ,  Mark A. Hollis ,  Franz Busse ,  Kenneth Alexander Diest

IPC分类号： H01L31/07 ,  H01L31/18 ,  H01L31/054

CPC分类号： H01L31/07 ,  H01L31/0547 ,  H01L31/056 ,  H01L31/0687 ,  H01L31/18 ,  Y02E10/52 ,  Y02E10/544

摘要： According to some aspects, an apparatus for converting electromagnetic radiation into electric power is provided, comprising a first layer comprising a first semiconductor material, an absorber in contact with the first layer, a second layer comprising a second semiconductor material, the second layer being in contact with the absorber, and a reflector to reflect at least a portion of electromagnetic radiation passing through the second layer. According to some aspects, a method of forming an apparatus for converting electromagnetic radiation into electric power is provided, comprising forming a reflector on a substrate, forming a first layer in contact with the reflector, the first layer comprising a first semiconductor material, forming an absorber in contact with the first layer, and forming a second layer in contact with the absorber, the second layer comprising a second semiconductor material.

摘要翻译： 根据一些方面，提供了一种用于将电磁辐射转换成电力的装置，包括第一层，包括第一半导体材料，与第一层接触的吸收体，第二层包括第二半导体材料，第二层位于 与吸收器接触，以及反射器以反射通过第二层的电磁辐射的至少一部分。 根据一些方面，提供一种形成用于将电磁辐射转换成电力的装置的方法，包括在基板上形成反射器，形成与所述反射器接触的第一层，所述第一层包括第一半导体材料，形成第 吸收体与第一层接触，以及形成与吸收体接触的第二层，第二层包括第二半导体材料。