Electronic and optoelectronic devices with quantum dot films
    10.
    发明授权
    Electronic and optoelectronic devices with quantum dot films 有权
    具有量子点薄膜的电子和光电器件

    公开(公告)号:US08023306B2

    公开(公告)日:2011-09-20

    申请号:US12780420

    申请日:2010-05-14

    IPC分类号: G11C11/00

    摘要: Optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit an array of conductive regions; and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a method of forming a nanocrystalline film includes fabricating a plurality of nanocrystals having a plurality of first ligands attached to their outer surfaces; exchanging the first ligands for second ligands of different chemical composition than the first ligands; forming a film of the ligand-exchanged nanocrystals; removing the second ligands; and fusing the cores of adjacent nanocrystals in the film to form an electrical network of fused nanocrystals. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused.

    摘要翻译: 光电子器件及其制造方法。 在一个方面,光学装置包括集成电路; 一组导电区域; 以及在所述集成电路的至少一部分上并且与所述导电区域阵列的至少一个导电区域电连通的光敏材料。 在另一方面,形成纳米晶体膜的方法包括制造多个纳米晶体,其具有连接到其外表面的多个第一配体; 与第一配体交换具有不同化学成分的第二配体的第一配体; 形成配体交换的纳米晶体的膜; 去除第二配体; 并将薄膜中相邻纳米晶体的芯熔合,形成熔融纳米晶体的电网。 在另一方面,膜包括融合的纳米晶体的网络,所述纳米晶体具有核心和外表面,其中所述融合的纳米晶体的至少一部分的核心与所述核心的至少一个物理接触和电连通 相邻的熔融纳米晶体,并且其中所述膜在纳米晶体的芯熔合的区域中基本上没有缺陷状态。