公开(公告)号：US20060063393A1

公开(公告)日：2006-03-23

申请号：US11262237

申请日：2005-10-28

申请人： Edward Shaffer ,  Kevin Howard ,  Joost Waeterloos ,  Jack Hetzner ,  Paul Townsend ,  Lynne Mills ,  Sheila Gombar-Fetner

发明人： Edward Shaffer ,  Kevin Howard ,  Joost Waeterloos ,  Jack Hetzner ,  Paul Townsend ,  Lynne Mills ,  Sheila Gombar-Fetner

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02118 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/3121 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： This invention is a method comprising providing a substrate, forming a first layer on the substrate, wherein the first layer has a dielectric constant of less than 3.0 and comprises an organic polymer, applying an organosilicate resin over the first layer, removing a portion of the organosilicate resin to expose a portion of the first layer, and removing the exposed portions of the first layer. The invention is also an integrated circuit article comprising an active substrate containing transistors and an electrical interconnect structure containing a pattern of metal lines separated, at least partially, by layers or regions of an organic polymeric material having a dielectric constant of less than 3.0 and further comprising a layer of an organosilicate resin above at least one layer of the organic polymer material.

公开(公告)号：US07268200B2

公开(公告)日：2007-09-11

申请号：US11262237

申请日：2005-10-28

申请人： Paul H. Townsend, III ,  Lynne K. Mills ,  Sheila Gombar-Fetner

发明人： Paul H. Townsend, III ,  Lynne K. Mills ,  Sheila Gombar-Fetner

IPC分类号： C08G77/08

CPC分类号： H01L21/02118 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/3121 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： This invention is directed to a method of making a composition in which a silane having an unsaturated group and a silane having an aromatic group are hydrolyzed. In this method the more highly reactive silane is continuously added during the hydrolysis reaction of the less reactive silane. The composition can be used in the fabrication of microelectronic devices, particularly as hardmasks or etchstops.

摘要翻译： 本发明涉及一种制备其中具有不饱和基团的硅烷和具有芳族基团的硅烷水解的组合物的方法。 在该方法中，反应性较低的硅烷在水解反应过程中连续添加更高反应性的硅烷。 该组合物可以用于制造微电子器件，特别是硬掩模或蚀刻棒。

公开(公告)号：US07115531B2

公开(公告)日：2006-10-03

申请号：US09933535

申请日：2001-08-20

申请人： Edward O. Shaffer, II ,  Kevin E. Howard ,  Joost J. M. Waeterloos ,  Jack E. Hetzner ,  Paul H. Townsend, III ,  Lynne K. Mills ,  Sheila Gombar-Fetner ,  Larry R. Wilson

发明人： Edward O. Shaffer, II ,  Kevin E. Howard ,  Joost J. M. Waeterloos ,  Jack E. Hetzner ,  Paul H. Townsend, III ,  Lynne K. Mills ,  Sheila Gombar-Fetner ,  Larry R. Wilson

IPC分类号： H01L21/469 ,  H01L21/31

CPC分类号： H01L21/02118 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/3121 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： This invention is a method comprising providing a substrate, forming a first layer on the substrate, wherein the first layer has a dielectric constant of less than 3.0 and comprises an organic polymer, applying an organosilicate resin over the first layer, removing a portion of the organosilicate resin to expose a portion of the first layer, and removing the exposed portions of the first layer. The invention is also an integrated circuit article comprising an active substrate containing transistors and an electrical interconnect structure containing a pattern of metal lines separated, at least partially, by layers or regions of an organic polymeric material having a dielectric constant of less than 3.0 and further comprising a layer of an organosilicate resin above at least one layer of the organic polymer material.