公开(公告)号：US07115531B2

公开(公告)日：2006-10-03

申请号：US09933535

申请日：2001-08-20

申请人： Edward O. Shaffer, II ,  Kevin E. Howard ,  Joost J. M. Waeterloos ,  Jack E. Hetzner ,  Paul H. Townsend, III ,  Lynne K. Mills ,  Sheila Gombar-Fetner ,  Larry R. Wilson

发明人： Edward O. Shaffer, II ,  Kevin E. Howard ,  Joost J. M. Waeterloos ,  Jack E. Hetzner ,  Paul H. Townsend, III ,  Lynne K. Mills ,  Sheila Gombar-Fetner ,  Larry R. Wilson

IPC分类号： H01L21/469 ,  H01L21/31

CPC分类号： H01L21/02118 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/3121 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： This invention is a method comprising providing a substrate, forming a first layer on the substrate, wherein the first layer has a dielectric constant of less than 3.0 and comprises an organic polymer, applying an organosilicate resin over the first layer, removing a portion of the organosilicate resin to expose a portion of the first layer, and removing the exposed portions of the first layer. The invention is also an integrated circuit article comprising an active substrate containing transistors and an electrical interconnect structure containing a pattern of metal lines separated, at least partially, by layers or regions of an organic polymeric material having a dielectric constant of less than 3.0 and further comprising a layer of an organosilicate resin above at least one layer of the organic polymer material.

公开(公告)号：US07268200B2

公开(公告)日：2007-09-11

申请号：US11262237

申请日：2005-10-28

申请人： Paul H. Townsend, III ,  Lynne K. Mills ,  Sheila Gombar-Fetner

发明人： Paul H. Townsend, III ,  Lynne K. Mills ,  Sheila Gombar-Fetner

IPC分类号： C08G77/08

CPC分类号： H01L21/02118 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/3121 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： This invention is directed to a method of making a composition in which a silane having an unsaturated group and a silane having an aromatic group are hydrolyzed. In this method the more highly reactive silane is continuously added during the hydrolysis reaction of the less reactive silane. The composition can be used in the fabrication of microelectronic devices, particularly as hardmasks or etchstops.

摘要翻译： 本发明涉及一种制备其中具有不饱和基团的硅烷和具有芳族基团的硅烷水解的组合物的方法。 在该方法中，反应性较低的硅烷在水解反应过程中连续添加更高反应性的硅烷。 该组合物可以用于制造微电子器件，特别是硬掩模或蚀刻棒。

公开(公告)号：US06815333B2

公开(公告)日：2004-11-09

申请号：US10402073

申请日：2003-03-28

申请人： Paul H. Townsend, III ,  Lynne K. Mills ,  Joost J. M. Waeterloos ,  Richard J. Strittmatter

发明人： Paul H. Townsend, III ,  Lynne K. Mills ,  Joost J. M. Waeterloos ,  Richard J. Strittmatter

IPC分类号： H01L214763

CPC分类号： H01L21/02118 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02307 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/31695 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/7682 ,  H01L21/76835

摘要： This invention relates to a method of dual damascene integration for manufacture of integrating circuits using three top hard mask layers having alternating etch selectivity characteristics.

摘要翻译： 本发明涉及一种双镶嵌一体化方法，用于使用具有交替蚀刻选择性特性的三个顶部硬掩模层来制造积分电路。

公开(公告)号：US06790792B2

公开(公告)日：2004-09-14

申请号：US10135099

申请日：2002-04-29

申请人： Edward O. Shaffer, II ,  Kevin E. Howard ,  James P. Godschalx ,  Paul H. Townsend, III

发明人： Edward O. Shaffer, II ,  Kevin E. Howard ,  James P. Godschalx ,  Paul H. Townsend, III

IPC分类号： H01L2102

CPC分类号： C08G61/10 ,  C08G2261/312 ,  H01L23/49894 ,  H01L23/5329 ,  H01L2924/0002 ,  H05K1/0326 ,  H01L2924/00

摘要： A cured polyphenylene polymer having a glass transition temperature no greater than 465° C. An integrated circuit article having a fracture toughness as determined by the modified edge liftoff test of at least 0.3 MPa-m1/2.

摘要翻译： 玻璃化转变温度不高于465℃的固化聚苯聚合物。通过改性边缘剥离试验测定的具有至少0.3MPa-m 1/2的断裂韧性的集成电路制品。

公开(公告)号：US06630520B1

公开(公告)日：2003-10-07

申请号：US09447011

申请日：1999-11-22

申请人： Kenneth J. Bruza ,  James P. Godschalx ,  Edward O. Shaffer, II ,  Dennis W. Smith, Jr. ,  Paul H. Townsend, III ,  Kevin J. Bouck ,  Qing Shan J. Niu

发明人： Kenneth J. Bruza ,  James P. Godschalx ,  Edward O. Shaffer, II ,  Dennis W. Smith, Jr. ,  Paul H. Townsend, III ,  Kevin J. Bouck ,  Qing Shan J. Niu

IPC分类号： C08J902

CPC分类号： H01L21/02126 ,  C08J9/26 ,  C08J2365/00 ,  C08L25/06 ,  C08L65/00 ,  H01L21/02118 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/312 ,  C08L2666/04 ,  C08L25/00 ,  C08L2666/06

摘要： A suitable cross-linkable matrix precursor and a poragen can be treated to form a porous cross-linked matrix having a Tg of greater than 300° C. The porous matrix material has a lower dielectric constant than the corresponding non-porous matrix material, making the porous matrix material particularly attractive for a variety of electronic applications including integrated circuits, multichip modules, and flat panel display devices.

公开(公告)号：US07109249B2

公开(公告)日：2006-09-19

申请号：US10893640

申请日：2004-07-16

申请人： Kenneth J. Bruza ,  James P. Godschalx ,  Edward O. Shaffer, II ,  Dennis W. Smith, Jr. ,  Paul H. Townsend, III ,  Kevin J. Bouck ,  Qing Shan J. Niu

发明人： Kenneth J. Bruza ,  James P. Godschalx ,  Edward O. Shaffer, II ,  Dennis W. Smith, Jr. ,  Paul H. Townsend, III ,  Kevin J. Bouck ,  Qing Shan J. Niu

IPC分类号： C08J9/02

CPC分类号： H01L21/02126 ,  C08J9/26 ,  C08J2365/00 ,  C08L25/06 ,  C08L65/00 ,  H01L21/02118 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/312 ,  C08L2666/04 ,  C08L25/00 ,  C08L2666/06

摘要： A suitable cross-linkable matrix precursor and a poragen can be treated to form a porous cross-linked matrix having a Tg of greater than 300° C. The porous matrix material has a lower dielectric constant than the corresponding non-porous matrix material, making the porous matrix material particularly attractive for a variety of electronic applications including integrated circuits, multichip modules, and flat panel display devices.

摘要翻译： 可以处理合适的可交联的基质前体和孔，以形成具有大于300℃的T N的多孔交联基质。多孔基质材料的介电常数比 相应的无孔基体材料，使得多孔基质材料对于包括集成电路，多芯片模块和平板显示装置的各种电子应用特别有吸引力。

公开(公告)号：US06887910B2

公开(公告)日：2005-05-03

申请号：US10283552

申请日：2002-10-29

申请人： Kenneth J. Bruza ,  James P. Godschalx ,  Edward O. Shaffer, II ,  Dennis W. Smith, Jr. ,  Paul H. Townsend, III ,  Kevin J. Bouck ,  Qing Shan J. Niu

发明人： Kenneth J. Bruza ,  James P. Godschalx ,  Edward O. Shaffer, II ,  Dennis W. Smith, Jr. ,  Paul H. Townsend, III ,  Kevin J. Bouck ,  Qing Shan J. Niu

IPC分类号： G02F1/1333 ,  C08F32/04 ,  C08F36/22 ,  C08F38/00 ,  C08J9/26 ,  C08L25/06 ,  C08L65/00 ,  H01L21/312 ,  C08J9/02

CPC分类号： H01L21/02126 ,  C08J9/26 ,  C08J2365/00 ,  C08L25/06 ,  C08L65/00 ,  H01L21/02118 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/312 ,  C08L2666/04 ,  C08L25/00 ,  C08L2666/06

摘要： A suitable cross-linkable matrix precursor and a poragen can be treated to form a porous cross-linked matrix having a Tg of greater than 300° C. The porous matrix material has a lower dielectric constant than the corresponding non-porous matrix material, making the porous matrix material particularly attractive for a variety of electronic applications including integrated circuits, multichip modules, and flat panel display devices.

摘要翻译： 可以处理合适的可交联的基质前体和孔，以形成具有大于300℃的T N的多孔交联基质。多孔基质材料的介电常数比 相应的无孔基体材料，使得多孔基质材料对于包括集成电路，多芯片模块和平板显示装置的各种电子应用特别有吸引力。

公开(公告)号：US06653358B2

公开(公告)日：2003-11-25

申请号：US10283551

申请日：2002-10-29

申请人： Kenneth J. Bruza ,  James P. Godschalx ,  Edward O. Shaffer, II ,  Dennis W. Smith, Jr. ,  Paul H. Townsend, III ,  Kevin J. Bouck ,  Qing Shan J. Niu

发明人： Kenneth J. Bruza ,  James P. Godschalx ,  Edward O. Shaffer, II ,  Dennis W. Smith, Jr. ,  Paul H. Townsend, III ,  Kevin J. Bouck ,  Qing Shan J. Niu

IPC分类号： C08J902

CPC分类号： H01L21/02126 ,  C08J9/26 ,  C08J2365/00 ,  C08L25/06 ,  C08L65/00 ,  H01L21/02118 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/312 ,  C08L2666/04 ,  C08L25/00 ,  C08L2666/06

摘要： A suitable cross-linkable matrix precursor and a poragen can be treated to form a porous cross-linked matrix having a Tg of greater than 300° C. The porous matrix material has a lower dielectric constant than the corresponding non-porous matrix material, making the porous matrix material particularly attractive for a variety of electronic applications including integrated circuits, multichip modules, and flat panel display devices.

公开(公告)号：US06184284B2

公开(公告)日：2001-02-06

申请号：US09138510

申请日：1998-08-24

申请人： Theodore M. Stokich, Jr. ,  Brian B. Martin ,  Paul H. Townsend, III

发明人： Theodore M. Stokich, Jr. ,  Brian B. Martin ,  Paul H. Townsend, III

IPC分类号： C08J501

CPC分类号： C09D165/02 ,  C08G2261/312 ,  C08L71/126 ,  C08L83/00

摘要： A composition is comprised of the following: a) a hydrolyzed or partially hydrolyzed alkoxysilane; b) a solvent consisting of an organic liquid or mixture of two or more organic liquids in which component (a) and component (c) are soluble and c) a cross linking prepolymer, oligomer, resin or mixtures thereof that forms a low dielectric constant crosslinked polymer. Preferred crosslinked polymers are of a arylcyclobutene or polyphenylene prepolymer, oligomer, resin or mixtures thereof. A coating may be made using the composition wherein the coating is comprised of a crosslinked polymer of a low dielectric crosslinking prepolymer, oligomer, resin or mixture thereof and a hydrolyzed or partially hydrolyzed alkoxysilane, said coating being adhered to a surface of a substrate wherein said surface is comprised of a first material that is a metal, ceramic or polymer and a second material that is (i) a metal, ceramic, or polymer and (ii) different than the first material.

摘要翻译： 组合物由以下组成：a）水解或部分水解的烷氧基硅烷; b）由组分（a）和组分（c）可溶于其中的有机液体或两种或更多种有机液体的混合物组成的溶剂; c）形成低介电常数的交联预聚物，低聚物，树脂或其混合物 交联聚合物。 优选的交联聚合物是芳基环丁烯或聚亚苯基预聚物，低聚物，树脂或其混合物。 可以使用组合物制备涂层，其中涂层由低介电交联预聚物，低聚物，树脂或其混合物的交联聚合物和水解或部分水解的烷氧基硅烷组成，所述涂层粘附到基材的表面，其中所述 表面由金属，陶瓷或聚合物的第一材料和（i）金属，陶瓷或聚合物和（ii）不同于第一材料的第二材料构成。

公开(公告)号：US5994489A

公开(公告)日：1999-11-30

申请号：US327954

申请日：1994-10-24

申请人： Robert F. Harris ,  Paul H. Townsend, III

发明人： Robert F. Harris ,  Paul H. Townsend, III

IPC分类号： C09D183/04 ,  C09D183/06 ,  C09D183/08 ,  C08G77/06

CPC分类号： C09D183/04 ,  C09D183/06 ,  C09D183/08

摘要： A method of hydrolyzing an alkoxysilane which comprises adding sufficient water to hydrolyze at least one alkoxy group, optionally, in the presence of acidic or basic catalysts.

摘要翻译： 水解烷氧基硅烷的方法，其包括加入足够的水以水解至少一个烷氧基，任选地，在酸性或碱性催化剂的存在下。