公开(公告)号：US6027562A

公开(公告)日：2000-02-22

申请号：US173931

申请日：1998-10-16

申请人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/20 ,  C30B15/00 ,  C30B15/14 ,  C30B29/06

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/206

摘要： A single crystal is grown in accordance with a Czochralski method such that the time for passing through a temperature zone of 1150-1080.degree. C. is 20 minutes or less, or such that the length of a portion of the single crystal corresponding to the temperature zone of 1150-1080.degree. C. in the temperature distribution is 2.0 cm or less. Alternatively, the single crystal is grown such that the time for passing through a temperature zone of 1250-1200.degree. C. is 20 minutes or less, or such that the length of a portion of the single crystal corresponding to the temperature zone of 1250-1200.degree. C. in the temperature distribution is 2.0 cm or less. This method decreases both the density and size of so-called grown-in defects such as FPD (100 defects/cm.sup.2 or less), LSTD, and COP (10 defects/cm.sup.2 or less) to thereby enable efficient production of a single crystal having an excellent good chip yield (80% or greater) in terms of oxide dielectric breakdown voltage characteristics.

公开(公告)号：US5911821A

公开(公告)日：1999-06-15

申请号：US923963

申请日：1997-09-05

申请人： Eiichi Iino ,  Makoto Iida ,  Masanori Kimura ,  Shozo Muraoka

发明人： Eiichi Iino ,  Makoto Iida ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/00 ,  C30B15/30 ,  C30B15/32 ,  C30B29/06 ,  C30B15/04

CPC分类号： C30B15/32 ,  C30B15/30 ,  Y10S117/911 ,  Y10T117/1032 ,  Y10T117/1072

摘要： There is disclosed a Czochralski method in which a seed crystal in contact with material melt is pulled, while being rotated, so as to grow a monocrystal, and a part of the crystal being grown is mechanically held during the pulling operation. The crystal is mechanically held in such a way that the weight W(kg) of the crystal satisfies the following Formula (1):W

摘要翻译： 公开了一种切克劳斯基方法，其中在旋转的同时拉动与材料熔体接触的晶种，以便生长单晶，并且在牵引操作期间机械地保持部分正在生长的晶体。 机械地保持晶体，使得晶体的重量W（kg）满足下式（1）：W <12.5×pi D2 / 4（1）其中D表示颈部的最小直径（mm） 。 这使得可以安全可靠地拉出重的单晶。

公开(公告)号：US6159438A

公开(公告)日：2000-12-12

申请号：US359078

申请日：1999-07-22

申请人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka ,  Hideki Yamanaka

发明人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka ,  Hideki Yamanaka

IPC分类号： C30B15/00 ,  C30B15/14 ,  C30B15/22 ,  C30B29/06 ,  H01L21/02 ,  H01L21/208 ,  H01L21/322 ,  C01B33/26

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203 ,  C30B15/206 ,  C30B15/22 ,  Y10S117/917 ,  Y10T117/1024 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1076 ,  Y10T117/108 ,  Y10T117/1088

摘要： In method for manufacturing a silicon single crystal in accordance with a Czochralski method, during the growth of the silicon single crystal, pulling is performed such that a solid-liquid interface in the crystal, excluding a peripheral 5 mm-width portion, exists within a range of an average vertical position of the solid-liquid interface.+-. 5 mm. There is also disclosed a method for manufacturing a silicon single crystal in accordance with the Czochralski method, wherein during the growth of a silicon single crystal, a furnace temperature is controlled such that a temperature gradient difference .DELTA.G (=Ge-Gc) is not greater than 5.degree. C./cm, where Ge is a temperature gradient (.degree. C./cm) at a peripheral portion of the crystal, and Gc is a temperature gradient (.degree. C./cm) at a central portion of the crystal, both in an in-crystal descending temperature zone between 1420.degree. C. and 1350.degree. C. or between a melting point of silicon and 1400.degree. C. in the vicinity of the solid-liquid interface of the crystal. The method maintains high productivity and enables a silicon single crystal and silicon wafers to be manufactured such that a defect density is very low over the entire crystal cross section, and the oxygen concentration distribution over the surface of each silicon wafer is improved.

摘要翻译： 在使用Czochralski法制造硅单晶的方法中，在硅单晶的生长期间，进行拉伸，使得晶体内的固体 - 液体界面（不包括外围5mm宽度部分）存在于 固液界面平均垂直位置的范围+/- 5 mm。 还公开了根据Czochralski方法制造硅单晶的方法，其中在单晶生长期间，控制炉温，使得温度梯度差DELTA G（= Ge-Gc）不是 大于5℃/ cm，其中Ge是晶体周边部分的温度梯度（℃/ cm），Gc是晶体中心部分的温度梯度（℃/ cm） 在晶体的固 - 液界面附近，在1420℃至1350℃之间的晶体下降温度区域或硅熔点与1400℃之间。 该方法保持高生产率，并且能够制造硅单晶和硅晶片，使得在整个晶体截面上的缺陷密度非常低，并且提高了每个硅晶片的表面上的氧浓度分布。

公开(公告)号：US6053975A

公开(公告)日：2000-04-25

申请号：US39830

申请日：1998-03-16

申请人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/30 ,  C30B15/32 ,  C30B29/06 ,  H01L21/208 ,  C30B35/00

CPC分类号： C30B15/30 ,  Y10T117/1072

摘要： In a crystal holding apparatus, a corrugated portion between a seed crystal and a straight cylindrical portion of a monocrystal is held by holding portions of a lifting jig during a monocrystal growth process in which the seed crystal is brought into contact with material melt and is subsequently pulled while being rotated. In the crystal holding apparatus, an attachment member for establishing surface contact with the corrugated portion of the crystal is attached to the tip end of each holding portion of the lifting jig. Therefore, the monocrystal can be held reliably, so that the breaking and falling down of the monocrystal during the pulling operation can be prevented.

摘要翻译： 在晶体保持装置中，晶种与单晶的直圆柱形部分之间的波纹状部分通过在晶体与材料熔体接触的单晶生长过程中保持提升夹具的部分来保持，随后 在旋转时拉动。 在晶体保持装置中，在提升夹具的每个保持部分的末端安装有用于与晶体的波纹部分建立表面接触的附接构件。 因此，可以可靠地保持单晶，从而可以防止在牵引操作期间单晶的断裂和下降。

公开(公告)号：US5968264A

公开(公告)日：1999-10-19

申请号：US109530

申请日：1998-07-02

申请人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka ,  Hideki Yamanaka

发明人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka ,  Hideki Yamanaka

IPC分类号： C30B15/00 ,  C30B15/14 ,  C30B15/22 ,  C30B29/06 ,  H01L21/02 ,  H01L21/208 ,  H01L21/322

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203 ,  C30B15/206 ,  C30B15/22 ,  Y10S117/917 ,  Y10T117/1024 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1076 ,  Y10T117/108 ,  Y10T117/1088

摘要： In method for manufacturing a silicon single crystal in accordance with a Czochralski method, during the growth of the silicon single crystal, pulling is performed such that a solid-liquid interface in the crystal, excluding a peripheral 5 mm-width portion, exists within a range of an average vertical position of the solid-liquid interface .+-.5 mm. There is also disclosed a method for manufacturing a silicon single crystal in accordance with the Czochralski method, wherein during the growth of a silicon single crystal, a furnace temperature is controlled such that a temperature gradient difference .DELTA.G (=Ge-Gc) is not greater than 5.degree. C./cm, where Ge is a temperature gradient (.degree.C./cm) at a peripheral portion of the crystal, and Gc is a temperature gradient (.degree.C./cm) at a central portion of the crystal, both in an in-crystal descending temperature zone between 1420.degree. C. and 1350.degree. C. or between a melting point of silicon and 1400.degree. C. in the vicinity of the solid-liquid interface of the crystal. The method maintains high productivity and enables a silicon single crystal and silicon wafers to be manufactured such that a defect density is very low over the entire crystal cross section, and the oxygen concentration distribution over the surface of each silicon wafer is improved.

摘要翻译： 在使用Czochralski法制造硅单晶的方法中，在硅单晶的生长期间，进行拉伸，使得晶体内的固体 - 液体界面（不包括外围5mm宽度部分）存在于 固液界面平均垂直位置的范围+/- 5 mm。 还公开了根据Czochralski方法制造硅单晶的方法，其中在单晶生长期间，控制炉温，使得温度梯度差DELTA G（= Ge-Gc）不是 大于5℃/ cm，其中Ge是晶体周边部分的温度梯度（℃/ cm），Gc是晶体中心部分的温度梯度（℃/ cm） 在晶体的固 - 液界面附近，在1420℃至1350℃之间的晶体下降温度区域或硅熔点与1400℃之间。 该方法保持高生产率，并且能够制造硅单晶和硅晶片，使得在整个晶体截面上的缺陷密度非常低，并且提高了每个硅晶片的表面上的氧浓度分布。

公开(公告)号：US5948164A

公开(公告)日：1999-09-07

申请号：US140288

申请日：1998-08-25

申请人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/32 ,  C30B29/06 ,  D04H1/4209 ,  H01L21/208 ,  C30B35/00

CPC分类号： C30B15/32 ,  Y10S117/90 ,  Y10S117/911 ,  Y10T117/10 ,  Y10T117/1072

摘要： A seed crystal holder used in a crystal pulling apparatus operated in accordance with the Czochralski method. In the seed crystal holder, a heat-resistant cushioning material is provided between the surface of a seed crystal and the contact surface of claws of the holder or between a cutaway surface of the seed crystal and a contact surface of an insert of the holder. The heat-resistant cushioning material is selected from the group consisting of carbon fiber felt, glass fiber felt, metallic fiber felt, or selected from materials that cause plastic deformation such as Al.

摘要翻译： 用于根据切克劳斯基方法操作的晶体拉制装置中的晶种保持架。 在种子晶体保持器中，在晶种的表面和保持器的爪的接触表面之间或晶种的切口表面与保持器的插入物的接触表面之间设置耐热缓冲材料。 耐热缓冲材料选自碳纤维毡，玻璃纤维毡，金属纤维毡，或选自引起塑性变形的材料如Al。

公开(公告)号：US5871578A

公开(公告)日：1999-02-16

申请号：US915397

申请日：1997-08-20

申请人： Eiichi Iino ,  Makoto Iida ,  Masanori Kimura ,  Shozo Muraoka

发明人： Eiichi Iino ,  Makoto Iida ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/00 ,  C30B15/24 ,  C30B15/30 ,  C30B29/06 ,  C30B33/04 ,  H01L21/208 ,  C30B15/32

CPC分类号： C30B15/30 ,  C30B15/305 ,  Y10S117/917

摘要： Oscillation of a growing crystal is suppressed in a Czochralski method when part of the growing crystal is mechanically held. Methods for holding and pulling a single crystal in a Czochralski method, wherein a seed crystal is pulled while rotating after the seed crystal is contacted with a raw material melt, part of the growing single crystal is mechanically held during pulling and the single crystal of heavy weight can be pulled regardless of mechanical strengths of the seed crystal or a neck portion thereof, wherein the raw material melt is under application of a magnetic field thereto when the growing crystal is mechanically held.

摘要翻译： 当生长晶体的一部分被机械保持时，生长晶体的振荡被抑制在切克劳斯基法（Czochralski method）中。 用Czochralski方法保持和拉取单晶的方法，其中在晶种与原料熔体接触之后，旋转时拉晶晶体，部分生长的单晶在拉伸期间被机械地保持，并且重结晶的单晶 无论种子晶体或其颈部的机械强度如何，均可以拉伸重量，其中当机械保持生长的晶体时，原料熔体施加磁场。

公开(公告)号：US06348180B1

公开(公告)日：2002-02-19

申请号：US09492001

申请日：2000-01-26

申请人： Makoto Iida ,  Satoshi Suzuki ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Satoshi Suzuki ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B1520

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203

摘要： A method for producing a silicon single crystal in accordance with the Czochralski method. The single crystal is grown in an N2(V) region where a large amount of precipitated oxygen and which is located within an N region located outside an OSF ring region, or is grown in a region including the OSF ring region, N1(V) and N2(V) regions located inside and outside the OSF ring region, in a defect distribution chart which shows a defect distribution in which the horizontal axis represents a radial distance D (mm) from the center of the crystal and the vertical axis represents a value of F/G (mm2/° C.·min), where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient (° C./mm) along the pulling direction within a temperature range of the melting point of silicon to 1400° C. The method allows production of silicon single crystal wafers in which neither FPDs nor L/D defects exist on the wafer surface, and gettering capability stemming from oxygen precipitation is provided over the entire wafer surface, and silicon single crystal wafers wherein OSF nuclei exit but no OSF ring appears when the wafer is subjected to thermal oxidation treatment, neither FPDs nor L/D defects exist on the wafer surface, and gettering capability is provided over the entire wafer surface.

摘要翻译： 根据Czochralski法生产硅单晶的方法。 单晶生长在大量析出氧并且位于OSF环外部的N区内的N2（V）区域中，或者在包括OSF环区域N1（V）的区域中生长， 和位于OSF环区域内外的N 2（V）区域的缺陷分布图，其表示水平轴表示与晶体中心的径向距离D（mm）的缺陷分布，纵轴表示 F / G的值（mm2 /℃·min），其中F是单晶的拉伸速率（mm / min），G是沿着单晶的平均晶体内温度梯度（°C / mm） 在硅熔点的温度范围内拉伸方向为1400℃。该方法允许生产晶片表面上不存在FPD和L / D缺陷的硅单晶晶片，并且提供由氧沉淀产生的吸杂能力 整个晶圆表面和硅单晶 当晶片进行热氧化处理时，在晶片表面上不存在FPD和L / D缺陷，并且在整个晶片表面上提供吸杂能力，其中OSF核离开但没有OSF环出现。

公开(公告)号：US6120599A

公开(公告)日：2000-09-19

申请号：US454841

申请日：1999-12-06

申请人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/00 ,  C30B15/20 ,  C30B29/06 ,  H01L21/02 ,  H01L21/208

CPC分类号： C30B29/06 ,  C30B15/203 ,  C30B15/206

摘要： In a method for producing a silicon single crystal wafer, a silicon single crystal is grown in accordance with the Czochralski method such that the F/G value becomes 0.112-0.142 mm.sup.2 /.degree. C..multidot.min at the center of the crystal, where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient (.degree. C./mm) along the pulling direction within a temperature range of the melting point of silicon to 1400.degree. C. Additionally, the single crystal is pulled such that the interstitial oxygen concentration becomes less than 24 ppma, or the time required to pass through a temperature zone of 1050-850.degree. C. within the crystal is controlled to become 140 minutes or less. The method allows production of silicon single crystal wafers in which neither FPDs nor L/D defects exist on the wafer surface, which therefore has an extremely low defect density, and whose entire surface is usable.

摘要翻译： 在制造硅单晶晶片的方法中，根据Czochralski法生长硅单晶，使得F / G值在晶体中心处为0.112-0.142mm 2 /℃×min，其中F为 单晶的拉伸速度（mm / min），G是在硅熔点至1400℃的温度范围内沿着牵引方向的平均晶体内温度梯度（DEG C./mm）。另外 拉伸单晶，使得间隙氧浓度变得小于24ppma，或者通过晶体内的1050-850℃的温度区所需的时间被控制为140分钟以下。 该方法允许生产其中晶片表面上不存在FPD和L / D缺陷的硅单晶晶片，因此具有极低的缺陷密度，并且其整个表面可用。

公开(公告)号：US06364947B1

公开(公告)日：2002-04-02

申请号：US09661985

申请日：2000-09-14

申请人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka ,  Hideki Yamanaka

发明人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka ,  Hideki Yamanaka

IPC分类号： C30B1500

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203 ,  C30B15/206 ,  C30B15/22 ,  Y10S117/917 ,  Y10T117/1024 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1076 ,  Y10T117/108 ,  Y10T117/1088

摘要： In method for manufacturing a silicon single crystal in accordance with a Czochralski method, during the growth of the silicon single crystal, pulling is performed such that a solid-liquid interface in the crystal, excluding a peripheral 5 mm-width portion, exists within a range of an average vertical position of the solid-liquid interface ±5 mm. There is also disclosed a method for manufacturing a silicon single crystal in accordance with the Czochralski method, wherein during the growth of a silicon single crystal, a furnace temperature is controlled such that a temperature gradient difference &Dgr;G (=Ge−Gc) is not greater than 5° C./cm, where Ge is a temperature gradient (° C./cm) at a peripheral portion of the crystal, and Gc is a temperature gradient (° C./cm) at a central portion of the crystal, both in an in-crystal descending temperature zone between 1420° C. and 1350° C. or between a melting point of silicon and 1400° C. in the vicinity of the solid-liquid interface of the crystal. The method maintains high productivity and enables a silicon single crystal and silicon wafers to be manufactured such that a defect density is very low over the entire crystal cross section, and the oxygen concentration distribution over the surface of each silicon wafer is improved.

摘要翻译： 在使用Czochralski法制造硅单晶的方法中，在硅单晶的生长期间，进行拉伸，使得晶体内的固体 - 液体界面（不包括外围5mm宽度部分）存在于 固液界面平均垂直位置范围±5 mm。 还公开了根据Czochralski方法制造硅单晶的方法，其中在硅单晶生长期间，控制炉温，使得温度梯度差DELTAG（= Ge-Gc）不大 其中Ge是晶体周边部分的温度梯度（℃/ cm），Gc是晶体中心部分的温度梯度（℃/ cm）， 在晶体的固 - 液界面附近，在1420℃和1350℃之间的晶体下降温度区域中，或在硅熔点和1400℃之间。 该方法保持高生产率，并且能够制造硅单晶和硅晶片，使得在整个晶体截面上的缺陷密度非常低，并且提高了每个硅晶片的表面上的氧浓度分布。