公开(公告)号：US08529704B2

公开(公告)日：2013-09-10

申请号：US12864624

申请日：2008-06-27

申请人： Eishiro Sasakawa ,  Masahiro Sakaki ,  Shigekazu Ueno ,  Keisuke Kawamura ,  Akemi Takano

发明人： Eishiro Sasakawa ,  Masahiro Sakaki ,  Shigekazu Ueno ,  Keisuke Kawamura ,  Akemi Takano

IPC分类号： B08B5/04

CPC分类号： C23C16/4401 ,  C23C16/4404 ,  C23C16/4405 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32862

摘要： An operation method for cleaning a vacuum processing apparatus includes feeding a cleaning gas into a film deposition chamber of the vacuum processing apparatus when a predetermined number of batches of film deposition process is finished. The predetermined number of batch of film deposition processes is calculated based on a film deposition-related operating time (a film deposition time and a film deposition preparation time) and a cleaning-related operating time (a cleaning procedure time, a cleaning procedure preparation time, and a pre-deposition film deposition time).

摘要翻译： 用于清洁真空处理装置的操作方法包括当预定数量的成膜过程完成时，将清洁气体进料到真空处理设备的成膜室中。 基于薄膜沉积相关的操作时间（薄膜沉积时间和薄膜沉积准备时间）和清洁相关的操作时间（清洁程序时间，清洁程序准备时间）来计算预定数量的成膜沉积工艺 ，以及预沉积膜沉积时间）。

公开(公告)号：US20100310785A1

公开(公告)日：2010-12-09

申请号：US12864624

申请日：2008-06-27

申请人： Eishiro Sasakawa ,  Masahiro Sakaki ,  Shigekazu Ueno ,  Keisuke Kawamura ,  Akemi Takano

发明人： Eishiro Sasakawa ,  Masahiro Sakaki ,  Shigekazu Ueno ,  Keisuke Kawamura ,  Akemi Takano

IPC分类号： C23C16/00 ,  B05C11/00 ,  B05D3/00

CPC分类号： C23C16/4401 ,  C23C16/4404 ,  C23C16/4405 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32862

摘要： It is an object of the invention to provide a vacuum processing apparatus that enables setting a timing interval between self-cleaning procedures simply and so as to have general-use, enables significantly lengthening this timing interval, and improves the production efficiency. In a plasma CVD apparatus (100) that carries out self-cleaning procedure by feeding a cleaning gas into a film deposition chamber (1) in which film deposition processing is carried out on a substrate (4), the timing interval between self-cleaning procedures is set in a range in which a film deposition operating time ratio (Ps) is converged with respect to an increase in a film deposition process amount, where the film deposition operating time ratio (Ps) is represented by the proportion of a film deposition-related operating time (Tt) in the sum of the film deposition-related operating time (Tt) and a cleaning-related operating time (Tc).

摘要翻译： 本发明的目的是提供一种真空处理装置，其能够简单地设定自清洁程序之间的定时间隔，从而具有通用性，能够显着延长该定时间隔，并提高生产效率。 在通过将清洁气体供给到在基板（4）上进行成膜处理的成膜室（1）中进行自清洁处理的等离子体CVD装置（100）中，自清洁 程序设定在相对于膜沉积处理量的增加而成膜沉积操作时间比（Ps）收敛的范围，其中成膜操作时间比（Ps）由膜沉积的比例 相关的操作时间（Tt）与膜沉积相关操作时间（Tt）和清洁相关操作时间（Tc）之和。