METHODS FOR FABRICATING CONTACTS OF SEMICONDUCTOR DEVICE STRUCTURES AND METHODS FOR DESIGNING SEMICONDUCTOR DEVICE STRUCTURES
    10.
    发明申请
    METHODS FOR FABRICATING CONTACTS OF SEMICONDUCTOR DEVICE STRUCTURES AND METHODS FOR DESIGNING SEMICONDUCTOR DEVICE STRUCTURES 有权
    用于制造半导体器件结构的接触的方法和用于设计半导体器件结构的方法

    公开(公告)号:US20110223761A1

    公开(公告)日:2011-09-15

    申请号:US13113468

    申请日:2011-05-23

    IPC分类号: H01L21/768 G06F17/50

    摘要: Methods for fabricating contacts of semiconductor device structures include forming a dielectric layer over a semiconductor substrate with active-device regions spaced at a first pitch, forming a first plurality of substantially in-line apertures over every second active-device region of the active-device regions, and forming a second plurality of substantially in-line apertures laterally offset from apertures of the first plurality over active-device regions over which apertures of the first plurality are not located. Methods for designing semiconductor device structures include forming at least two laterally offset sets of contacts over a substrate including active-device regions at a first pitch, the contacts being formed at a second pitch that is about twice the first pitch.

    摘要翻译: 用于制造半导体器件结构的触点的方法包括在半导体衬底上形成介电层,所述有源器件区域以第一间距隔开,在有源器件的每个第二有源器件区域上形成第一多个基本上一字排列的孔 并且形成第二多个基本上在线的孔,所述第二多个基本上在线的孔横向偏离所述第一多个的主动装置区域上的所述第一多个孔的孔不在其上的位置。 设计半导体器件结构的方法包括在包括有源器件区的第一间距的衬底上形成至少两个横向偏移的触点组,所述触点以大约是第一间距的两倍的第二间距形成。