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1.发明申请公开(公告)号：US20180047905A1
公开(公告)日：2018-02-15
申请号：US15596659
申请日：2017-05-16
Inventor： Jaehyun MOON , Jong Tae LIM , YOUNG SAM PARK , Jin Wook SHIN , Byoung Gon YU , Hyunkoo LEE , Jong Chan JEONG , Nam Sung CHO , Doo-Hee CHO , Jun-Han HAN
IPC: H01L51/00
CPC classification number: H01L51/0021 , H01L51/5215 , H01L51/5234
Abstract: Provided is a method for manufacturing an electronic device including a transparent conductive structure, the method including preparing a transparent electrode in which, among a first region and a second region, the first region is selectively surface-modified, preparing a mixed composition including a first composition and a second composition having a different polarity from the first composition, and applying the mixed composition onto the transparent electrode, wherein the applied mixed composition is disposed in the surface modified first region, and the mixed composition disposed in the first region is phase-separated into a first composition layer and a second composition layer disposed on the first composition layer.
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公开(公告)号：US20170110693A1
公开(公告)日：2017-04-20
申请号：US15394927
申请日：2016-12-30
Inventor： Jin Wook SHIN , Jeong Ik LEE , HongKyw CHOI , Jaehyun MOON , Jonghee LEE , Nam Sung CHO , Doo-Hee CHO , Chul Woong JOO , Jun-Han HAN
CPC classification number: H01L51/56 , H01L51/5203 , H01L51/5268
Abstract: Provided is an organic light emitting diodes (OLED) and method of manufacturing the OLED. The OLED includes: a substrate; a light scattering layer having an uneven shape on the substrate; a transparent electrode film provided directly on and in contact with the light scattering layer; an organic light emitting layer on the transparent electrode film; and an electrode on the organic light emitting layer. The method of manufacturing the OLED includes: disposing a light scattering layer on a substrate; providing a transparent electrode film on the light scattering layer; and transferring the transparent electrode film to be directly on and in contact with the light scattering layer.
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公开(公告)号：US20170108621A1
公开(公告)日：2017-04-20
申请号：US15294078
申请日：2016-10-14
Inventor： YOUNG SAM PARK , Doo-Hee CHO , JEONG IK LEE , Jonghee LEE , Seongdeok AHN , Byoung Gon YU , Nam Sung CHO
Abstract: Provided are an optical device and a manufacturing method thereof. The method of manufacturing an optical device may include providing a substrate structure, and depositing an array including curved structures on the substrate structure. The curved structures may include a crystalline organic compound.
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公开(公告)号：US20190213380A1
公开(公告)日：2019-07-11
申请号：US16219373
申请日：2018-12-13
Inventor： Chul Woong JOO , Jonghee LEE , Jae-Eun PI , Byoung-Hwa KWON , Hyunsu CHO , Seung Youl KANG , Seongdeok AHN , Jeong Ik LEE , Nam Sung CHO , Sung Haeng CHO , Woojin SUNG , Jongchan LEE
IPC: G06K9/00
CPC classification number: G06K9/0004 , H01L51/5215 , H01L51/5234 , H01L51/5237
Abstract: Provided is an optical fingerprint recognition sensor. The optical fingerprint recognition sensor includes a transparent light emitting unit configured to emit light to a fingerprint, a light receiving unit disposed below the light emitting unit to vertically overlap the light emitting unit and configured to receive light reflected by the fingerprint, and a control unit disposed below the light emitting unit to vertically overlap the light emitting unit and configured to control the light emitting unit and the light receiving unit. The light emitting unit includes an organic layer.
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公开(公告)号：US20190131559A1
公开(公告)日：2019-05-02
申请号：US16053333
申请日：2018-08-02
Inventor： Byoung-Hwa KWON , Chul Woong JOO , Jonghee LEE , Hyunkoo LEE , Hyunsu CHO , Nam Sung CHO
Abstract: Provided is a display device and a manufacturing method thereof. More specifically, the present invention relates to a display device including a nickel oxide thin film co-doped with a copper monovalent cation and a copper divalent cation, and a manufacturing method thereof. The present invention provides a display device including a substrate, a first electrode layer disposed on the substrate, a first common layer disposed on the substrate, a light emitting layer disposed on the first common layer, a second common layer disposed on the light emitting layer, and a second electrode layer disposed on the second common layer, wherein the first common layer includes a nickel oxide thin film co-doped with a first metal cation and a second metal cation, and the oxidation number of the first metal cation and the oxidation number the second metal cation are different from each other.
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Patent Agency Ranking
公开(公告)号：US20160155994A1
公开(公告)日：2016-06-02
申请号：US15017758
申请日：2016-02-08
Inventor： Doo-Hee CHO , JEONG IK LEE , Jin Wook SHIN , Jin Woo HUH , Nam Sung CHO , Jonghee LEE , Seung Koo PARK , Jaehyun MOON
CPC classification number: H01L51/56 , H01L51/5253 , H01L51/5268 , H01L2251/301 , H01L2251/303 , H01L2251/5369 , H01L2251/558
Abstract: Provided is a method of manufacturing an organic light-emitting diode including forming an anode on a substrate, forming an organic light-emitting layer on the anode, forming a cathode on the organic light-emitting layer, and forming a light scattering film on the cathode. The light scattering film is a polycrystalline dielectric material composed of anisotropic crystals, and a surface roughness Ra of a top surface of the light scattering film is greater than or equal to about 50 nm by an anisotropic crystal growth of particles of the dielectric material.
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公开(公告)号：US20150041771A1
公开(公告)日：2015-02-12
申请号：US14243284
申请日：2014-04-02
Inventor： Doo-Hee CHO , Jeong Ik LEE , Jin Wook SHIN , Jin Woo HUH , Nam Sung CHO , Jonghee LEE , Seung Koo PARK , Jaehyun MOON
CPC classification number: H01L51/56 , H01L51/5253 , H01L51/5268 , H01L2251/301 , H01L2251/303 , H01L2251/5369 , H01L2251/558
Abstract: Provided is a method of manufacturing an organic light-emitting diode including forming an anode on a substrate, forming an organic light-emitting layer on the anode, forming a cathode on the organic light-emitting layer, and forming a light scattering film on the cathode. The light scattering film is a polycrystalline dielectric material composed of anisotropic crystals, and a surface roughness Ra of a top surface of the light scattering film is greater than or equal to about 50 nm by an anisotropic crystal growth of particles of the dielectric material.
Abstract translation: 提供一种制造有机发光二极管的方法，包括在基板上形成阳极，在阳极上形成有机发光层，在有机发光层上形成阴极，并在其上形成光散射膜 阴极。 光散射膜是由各向异性晶体构成的多晶介电材料，通过介电材料的粒子的各向异性晶体生长，光散射膜的上表面的表面粗糙度Ra大于或等于约50nm。
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公开(公告)号：US20230290306A1
公开(公告)日：2023-09-14
申请号：US18119635
申请日：2023-03-09
Applicant: Electronics and Telecommunications Research Institute , IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
Inventor： Chun Won BYUN , Chan Mo KANG , Nam Sung CHO , Byong Deok CHOI , Yong Duck KIM
IPC: G09G3/3233 , G09G3/20
CPC classification number: G09G3/3233 , G09G3/2096 , G09G3/2007 , G09G2300/0852 , G09G2300/0861 , G09G2310/08 , G09G2330/028 , G09G2310/0202 , G09G2300/0465 , G09G2300/0819
Abstract: A pixel circuit may comprise: a first transistor having a first terminal connected to a data line and to which a data signal is applied and a gate terminal connected to a scan line and to which a scan signal is applied; a third transistor having a gate terminal connected to a second terminal of the first transistor and a second terminal connected to a light emitting device; a capacitor having a second terminal commonly connected to the second terminal of the first transistor and the gate terminal of the third transistor; and a second transistor having a second terminal commonly connected to a first terminal of the capacitor and a first terminal of the third transistor, a first terminal connected to a first power supply voltage, and a gate terminal connected to an emission line to which an emission signal is applied.
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公开(公告)号：US20190311177A1
公开(公告)日：2019-10-10
申请号：US16378484
申请日：2019-04-08
Inventor： Chul Woong JOO , Seung Youl KANG , Jaehyun MOON , Seongdeok AHN , Jae-Eun PI , Young Sam PARK , Byoung-Hwa KWON , Sung Haeng CHO , JEONG IK LEE , Nam Sung CHO , Su Jae LEE
Abstract: Provided is a complex biometric sensor. The complex biometric sensor includes a substrate including a light emitting region, a first light receiving region, and a second light receiving region, a light emitting part disposed adjacent to the substrate in the light emitting region, a color conversion layer disposed on the substrate in the light emitting region and vertically overlapping the light emitting part; a first light receiving layer disposed on the substrate in the first light receiving region, and a second light receiving layer disposed on the substrate in the second light receiving region. The light emitting part generates light of a first wavelength. The color conversion layer receives light of the first wavelength and emits the light of the first wavelength and light of the second wavelength. The first light receiving layer detects the light of the first wavelength. The second light receiving layer detects the light of the second wavelength.
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公开(公告)号：US20170219902A1
公开(公告)日：2017-08-03
申请号：US15234323
申请日：2016-08-11
Inventor： Joo Yeon KIM , Hojun RYU , Sang Hoon CHEON , Seong-Mok CHO , Ji-Young OH , Tae-Youb KIM , Chil Seong AH , Yong Hae KIM , Jeong Ik LEE , Nam Sung CHO , Chi-Sun HWANG
CPC classification number: G02F1/1533 , G02F1/155 , G02F2001/1536
Abstract: Provided is an electrochromic device, which may prevent a damage of an electrode and include a lower substrate and an upper substrate configured to face each other with an electrolyte layer therebetween, an upper electrode provided between the electrolyte layer and the upper substrate, a lower electrode provided between the electrolyte layer and the lower substrate, an upper ion reactive layer provided between the upper electrode and the electrolyte layer, and a lower protection layer provided between the lower electrode and the electrolyte layer and configured to prohibit the lower electrode and the electrolyte layer from contacting.
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