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    FLEXIBLE TOUCH PANEL AND METHOD OF MANUFACTURING THEREOF
    2.
    发明公开
    FLEXIBLE TOUCH PANEL AND METHOD OF MANUFACTURING THEREOF 审中-公开

    公开(公告)号：US20230152930A1

    公开(公告)日：2023-05-18

    申请号：US17903145

    申请日：2022-09-06

    Applicant: Electronics and Telecommunications Research Institute

    Inventor： Chan Woo PARK ,  Sang Hoon CHEON ,  Tae-Youb KIM ,  Bock Soon NA ,  Ji-Young OH ,  Su Jae LEE

    IPC: G06F3/044

    CPC classification number: G06F3/0446 ,  G06F2203/04111 ,  G06F2203/04112 ,  G06F2203/04102 ,  G06F2203/04103

    Abstract: Provided is a flexible touch panel. The flexible touch panel includes a first sensor part extending in a first direction on a substrate, a second sensor part extending in a second direction crossing the first direction on the substrate, and a protective layer surrounding the first and second sensor parts, wherein the first sensor part includes first sensor patterns spaced apart from each other in the first direction, a first connection electrode disposed between the first sensor patterns adjacent to each other, and first connection patterns connecting the first connection electrode and the first sensor patterns to each other, wherein each of the first sensor patterns includes first electrode patterns spaced apart from each other in a form of a mesh and first wiring patterns connecting the adjacent first electrode patterns to each other, wherein each of the first wiring patterns and the first connection patterns has a serpentine structure, wherein the first electrode patterns and the first wiring patterns include the same material as each other.

    PRESSURE SENSING ELEMENT
    3.
    发明申请
    PRESSURE SENSING ELEMENT 审中-公开

    公开(公告)号：US20180246000A1

    公开(公告)日：2018-08-30

    申请号：US15890846

    申请日：2018-02-07

    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

    Inventor： Seong Hyun KIM ,  Su Jae LEE ,  Kyoung Ik CHO ,  Chi-Sun HWANG

    IPC: G01L19/06 ,  G01L9/00

    Abstract: Provided is a pressure sensing element including a first electrode, a pressure sensing unit on the first electrode, a second electrode disposed on the pressure sensing unit and having first and second points on a top surface thereof, a first elastic member on the second electrode, and a second elastic member on the first elastic electrode, wherein a thickness of the first elastic member decreases from the first point toward the second point, and a thickness of the second elastic member increases from the second point toward the first point.

    STRAIN SENSOR
    8.
    发明申请
    STRAIN SENSOR 有权

    公开(公告)号：US20210356340A1

    公开(公告)日：2021-11-18

    申请号：US17317337

    申请日：2021-05-11

    Applicant: Electronics and Telecommunications Research Institute

    Inventor： Su Jae LEE ,  Seong Hyun KIM ,  Chan Woo PARK ,  Jae Bon KOO ,  Bock Soon NA ,  Ji-Young OH

    IPC: G01L5/162 ,  G01B7/16

    Abstract: Provided is a strain sensor. The strain sensor according to embodiments of the inventive concept includes a flexible substrate, rigid patterns on the flexible substrate, the rigid patterns including a first pattern and a second pattern spaced apart from the first pattern in a first direction, a first electrode on the first pattern, a second electrode on the second pattern, the second electrode being spaced apart from the first electrode, and a piezoresistive layer connecting the first electrode and the second electrode. Here, each of the rigid patterns may have a stiffness greater than that of the flexible substrate.

    OXIDE TRANSISTOR WITH NANO-LAYERED STRUCTURE AND METHOD OF FABRICATING THE SAME
    10.
    发明申请
    OXIDE TRANSISTOR WITH NANO-LAYERED STRUCTURE AND METHOD OF FABRICATING THE SAME 有权
    具有纳米结构的氧化物晶体及其制造方法

    公开(公告)号：US20140159036A1

    公开(公告)日：2014-06-12

    申请号：US14020498

    申请日：2013-09-06

    Applicant: Electronics and Telecommunications Research Institute

    Inventor： Su Jae LEE ,  Chi-Sun HWANG ,  Hye Yong CHU ,  Sang Chul LIM ,  Jae-Eun PI ,  Min Ki RYU

    IPC: H01L29/786 ,  H01L29/66

    CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/66969 ,  H01L29/78696

    Abstract: According to example embodiments of the inventive concept, provided is a transistor with a nano-layered oxide semiconductor layer. The oxide semiconductor layer may include at least one first nano layer and at least one second nano layer that are alternatingly stacked one on another. Here, the first nano layer and the second nano layer may include different materials from each other, and thus, a channel with high electron mobility may be formed at the interface between the first and second nano layers. Accordingly, the transistor can have high reliability.

    Abstract translation: 根据本发明构思的示例性实施例，提供了具有纳米层氧化物半导体层的晶体管。 氧化物半导体层可以包括交替堆叠在一起的至少一个第一纳米层和至少一个第二纳米层。 这里，第一纳米层和第二纳米层可以包括彼此不同的材料，因此，可以在第一和第二纳米层之间的界面处形成具有高电子迁移率的沟道。 因此，晶体管可以具有高的可靠性。

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