NON-VOLATILE MEMORY INTERFACE
    1.
    发明申请
    NON-VOLATILE MEMORY INTERFACE 有权
    非易失性存储器接口

    公开(公告)号:US20150032941A1

    公开(公告)日:2015-01-29

    申请号:US14128669

    申请日:2013-07-25

    IPC分类号: G06F12/02

    摘要: In an embodiment, a memory interface may send an indication that a request is being sent. The indication may be sent to a non-volatile memory via a point-to-point bus between a memory interface and the non-volatile memory. The memory interface may send the request to the non-volatile memory via the bus. The request may include an address that may be used to identify a location for storing or reading data. The non-volatile memory may acquire the request from the bus and process the request. After processing the request, the non-volatile memory may send an indication to the memory interface that indicates the non-volatile memory has a response to send to the memory interface. The memory interface may grant access to the bus to the non-volatile memory. After being granted access to the bus, the non-volatile memory may send the response to the memory interface.

    摘要翻译: 在一个实施例中,存储器接口可以发送请求被发送的指示。 该指示可以经由存储器接口和非易失性存储器之间的点对点总线发送到非易失性存储器。 存储器接口可以经由总线将请求发送到非易失性存储器。 请求可以包括可用于标识用于存储或读取数据的位置的地址。 非易失性存储器可以从总线获取请求并处理请求。 在处理请求之后,非易失性存储器可以向存储器接口发送指示非易失性存储器具有发送到存储器接口的响应的指示。 存储器接口可以向总线授予对非易失性存储器的访问。 在被允许访问总线之后,非易失性存储器可以将响应发送到存储器接口。

    DUTY CYCLE COMPENSATION OF RAM TRANSMITTERS
    2.
    发明申请
    DUTY CYCLE COMPENSATION OF RAM TRANSMITTERS 有权
    RAM发射机的占空比补偿

    公开(公告)号:US20140003550A1

    公开(公告)日:2014-01-02

    申请号:US13536567

    申请日:2012-06-28

    IPC分类号: H04L27/00

    摘要: Disclosed embodiments may include a circuit having a clock-to-output (TCO) compensation circuit coupled to a RAM pull-up transmitter and a RAM pull-down transmitter. The TCO compensation circuit may be configured to compare a first output with a second output and to generate a delay code, based on the comparison, for at least one other RAM transmitter on the die to adjust a duty cycle of a third output associated with the at least one other RAM transmitter. Other embodiments may be disclosed.

    摘要翻译: 公开的实施例可以包括具有耦合到RAM上拉发送器和RAM下拉发送器的时钟到输出(TCO)补偿电路的电路。 TCO补偿电路可以被配置为将第一输出与第二输出进行比较,并且基于比较来生成针对芯片上的至少一个其他RAM发送器的延迟码,以调整与第二输出相关联的第三输出的占空比 至少一个其他RAM发送器。 可以公开其他实施例。