公开(公告)号：US20050223994A1

公开(公告)日：2005-10-13

申请号：US10822093

申请日：2004-04-08

申请人： Eric Blomiley ,  Nirmal Ramaswamy ,  Ross Dando ,  Joel Drewes ,  Danny Dynka

发明人： Eric Blomiley ,  Nirmal Ramaswamy ,  Ross Dando ,  Joel Drewes ,  Danny Dynka

IPC分类号： C23C8/00 ,  C23C14/50 ,  C23C14/54 ,  C23C16/00 ,  C23C16/458 ,  C23C16/48 ,  C23C16/52 ,  C30B25/02 ,  C30B29/06

CPC分类号： C23C16/481 ,  C23C14/505 ,  C23C14/541 ,  C23C16/45521 ,  C23C16/4584 ,  C23C16/52 ,  C30B25/02 ,  C30B29/06

摘要： In one implementation, a substrate susceptor for receiving a semiconductor substrate for selective epitaxial silicon-comprising depositing thereon, where the depositing comprises measuring emissivity of the susceptor from at least one susceptor location in a non-contacting manner, includes a body having a front substrate receiving side, a back side, and a peripheral edge. At least one susceptor location from which emissivity is to be measured is received on at least one of the front substrate receiving side, the back side, and the edge. Such at least one susceptor location comprises an outermost surface comprising a material upon which selective epitaxial silicon will not deposit upon during selective epitaxial silicon depositing on a semiconductor substrate received by the susceptor for at least an initial thickness of epitaxial silicon depositing on said substrate. Other aspects and implementations are contemplated.

摘要翻译： 在一个实施方案中，用于接收用于选择性外延硅的半导体衬底的衬底感受体包括沉积在其上，其中所述沉积包括以非接触方式从至少一个感受器位置测量所述基座的发射率，所述衬底基座包括具有前衬底 接收侧，后侧和周缘。 在前基板接收侧，后侧和边缘中的至少一个上接收要测量发射率的至少一个感受器位置。 这样的至少一个感受器位置包括最外表面，其包括材料，选择性外延硅将不会沉积在选择性外延硅沉积在由基座接收的半导体衬底上，以至少沉积在所述衬底上的外延硅的初始厚度。 考虑了其他方面和实现。

公开(公告)号：US20060243208A1

公开(公告)日：2006-11-02

申请号：US11444789

申请日：2006-05-31

申请人： Eric Blomiley ,  Nirmal Ramaswamy ,  Ross Dando ,  Joel Drewes ,  Danny Dynka

发明人： Eric Blomiley ,  Nirmal Ramaswamy ,  Ross Dando ,  Joel Drewes ,  Danny Dynka

IPC分类号： C23C16/00

CPC分类号： C23C16/481 ,  C23C14/505 ,  C23C14/541 ,  C23C16/45521 ,  C23C16/4584 ,  C23C16/52 ,  C30B25/02 ,  C30B29/06

摘要： In one implementation, a substrate susceptor for receiving a semiconductor substrate for selective epitaxial silicon-comprising depositing thereon, where the depositing comprises measuring emissivity of the susceptor from at least one susceptor location in a non-contacting manner, includes a body having a front substrate receiving side, a back side, and a peripheral edge. At least one susceptor location from which emissivity is to be measured is received on at least one of the front substrate receiving side, the back side, and the edge. Such at least one susceptor location comprises an outermost surface comprising a material upon which selective epitaxial silicon will not deposit upon during selective epitaxial silicon depositing on a semiconductor substrate received by the susceptor for at least an initial thickness of epitaxial silicon depositing on said substrate. Other aspects and implementations are contemplated.

公开(公告)号：US20060216945A1

公开(公告)日：2006-09-28

申请号：US11444953

申请日：2006-05-31

申请人： Eric Blomiley ,  Nirmal Ramaswamy ,  Ross Dando ,  Joel Drewes ,  Danny Dynka

发明人： Eric Blomiley ,  Nirmal Ramaswamy ,  Ross Dando ,  Joel Drewes ,  Danny Dynka

IPC分类号： H01L21/31 ,  C23C16/52 ,  H01L21/66 ,  C23C16/00

CPC分类号： C23C16/481 ,  C23C14/505 ,  C23C14/541 ,  C23C16/45521 ,  C23C16/4584 ,  C23C16/52 ,  C30B25/02 ,  C30B29/06

摘要： In one implementation, a substrate susceptor for receiving a semiconductor substrate for selective epitaxial silicon-comprising depositing thereon, where the depositing comprises measuring emissivity of the susceptor from at least one susceptor location in a non-contacting manner, includes a body having a front substrate receiving side, a back side, and a peripheral edge. At least one susceptor location from which emissivity is to be measured is received on at least one of the front substrate receiving side, the back side, and the edge. Such at least one susceptor location comprises an outermost surface comprising a material upon which selective epitaxial silicon will not deposit upon during selective epitaxial silicon depositing on a semiconductor substrate received by the susceptor for at least an initial thickness of epitaxial silicon depositing on said substrate. Other aspects and implementations are contemplated.

摘要翻译： 在一个实施方案中，用于接收用于选择性外延硅的半导体衬底的衬底感受体包括沉积在其上，其中所述沉积包括以非接触方式从至少一个感受器位置测量所述基座的发射率，所述衬底基座包括具有前衬底 接收侧，后侧和周缘。 在前基板接收侧，后侧和边缘中的至少一个上接收要测量发射率的至少一个感受器位置。 这样的至少一个感受器位置包括最外表面，其包括材料，选择性外延硅将不会沉积在选择性外延硅沉积在由基座接收的半导体衬底上，以至少沉积在所述衬底上的外延硅的初始厚度。 考虑了其他方面和实现。

公开(公告)号：US20070087576A1

公开(公告)日：2007-04-19

申请号：US11601232

申请日：2006-11-17

申请人： Eric Blomiley ,  Nirmal Ramaswamy ,  Ross Dando ,  Joel Drewes ,  Danny Dynka

发明人： Eric Blomiley ,  Nirmal Ramaswamy ,  Ross Dando ,  Joel Drewes ,  Danny Dynka

IPC分类号： C23C16/00 ,  H01L21/31

CPC分类号： C23C16/481 ,  C23C14/505 ,  C23C14/541 ,  C23C16/45521 ,  C23C16/4584 ,  C23C16/52 ,  C30B25/02 ,  C30B29/06

摘要： In one implementation, a substrate susceptor for receiving a semiconductor substrate for selective epitaxial silicon-comprising depositing thereon, where the depositing comprises measuring emissivity of the susceptor from at least one susceptor location in a non-contacting manner, includes a body having a front substrate receiving side, a back side, and a peripheral edge. At least one susceptor location from which emissivity is to be measured is received on at least one of the front substrate receiving side, the back side, and the edge. Such at least one susceptor location comprises an outermost surface comprising a material upon which selective epitaxial silicon will not deposit upon during selective epitaxial silicon depositing on a semiconductor substrate received by the susceptor for at least an initial thickness of epitaxial silicon depositing on said substrate. Other aspects and implementations are contemplated.

摘要翻译： 在一个实施方案中，用于接收用于选择性外延硅的半导体衬底的衬底感受体包括沉积在其上，其中所述沉积包括以非接触方式从至少一个感受器位置测量所述基座的发射率，所述衬底基座包括具有前衬底 接收侧，后侧和周缘。 在前基板接收侧，后侧和边缘中的至少一个上接收要测量发射率的至少一个感受器位置。 这样的至少一个感受器位置包括最外表面，其包括材料，选择性外延硅将不会沉积在选择性外延硅沉积在由基座接收的半导体衬底上，以至少沉积在所述衬底上的外延硅的初始厚度。 考虑了其他方面和实现。

公开(公告)号：US20060243209A1

公开(公告)日：2006-11-02

申请号：US11444768

申请日：2006-05-31

申请人： Eric Blomiley ,  Nirmal Ramaswamy ,  Ross Dando ,  Joel Drewes ,  Danny Dynka

发明人： Eric Blomiley ,  Nirmal Ramaswamy ,  Ross Dando ,  Joel Drewes ,  Danny Dynka

IPC分类号： C23C16/00

CPC分类号： C23C16/481 ,  C23C14/505 ,  C23C14/541 ,  C23C16/45521 ,  C23C16/4584 ,  C23C16/52 ,  C30B25/02 ,  C30B29/06

摘要： In one implementation, a substrate susceptor for receiving a semiconductor substrate for selective epitaxial silicon-comprising depositing thereon, where the depositing comprises measuring emissivity of the susceptor from at least one susceptor location in a non-contacting manner, includes a body having a front substrate receiving side, a back side, and a peripheral edge. At least one susceptor location from which emissivity is to be measured is received on at least one of the front substrate receiving side, the back side, and the edge. Such at least one susceptor location comprises an outermost surface comprising a material upon which selective epitaxial silicon will not deposit upon during selective epitaxial silicon depositing on a semiconductor substrate received by the susceptor for at least an initial thickness of epitaxial silicon depositing on said substrate. Other aspects and implementations are contemplated. In one implementation, a substrate susceptor for receiving a semiconductor substrate for selective epitaxial silicon-comprising depositing thereon, where the depositing comprises measuring emissivity of the susceptor from at least one susceptor location in a non-contacting manner, includes a body having a front substrate receiving side, a back side, and a peripheral edge. At least one susceptor location from which emissivity is to be measured is received on at least one of the front substrate receiving side, the back side, and the edge. Such at least one susceptor location comprises an outermost surface comprising a material upon which selective epitaxial silicon will not deposit upon during selective epitaxial silicon depositing on a semiconductor substrate received by the susceptor for at least an initial thickness of epitaxial silicon depositing on said substrate. Other aspects and implementations are contemplated.

摘要翻译： 在一个实施方案中，用于接收用于选择性外延硅的半导体衬底的衬底感受体包括沉积在其上，其中所述沉积包括以非接触方式从至少一个感受器位置测量所述基座的发射率，所述衬底基座包括具有前衬底 接收侧，后侧和周缘。 在前基板接收侧，后侧和边缘中的至少一个上接收要测量发射率的至少一个感受器位置。 这样的至少一个感受器位置包括最外表面，其包括材料，选择性外延硅将不会沉积在选择性外延硅沉积在由基座接收的半导体衬底上，以至少沉积在所述衬底上的外延硅的初始厚度。 考虑了其他方面和实现。 在一个实施方案中，用于接收用于选择性外延硅的半导体衬底的衬底感受体包括沉积在其上，其中所述沉积包括以非接触方式从至少一个感受器位置测量所述基座的发射率，所述衬底基座包括具有前衬底 接收侧，后侧和周缘。 在前基板接收侧，后侧和边缘中的至少一个上接收要测量发射率的至少一个感受器位置。 这样的至少一个感受器位置包括最外表面，其包括材料，选择性外延硅将不会沉积在选择性外延硅沉积在由基座接收的半导体衬底上，以至少沉积在所述衬底上的外延硅的初始厚度。 考虑了其他方面和实现。

公开(公告)号：US20060231016A1

公开(公告)日：2006-10-19

申请号：US11471106

申请日：2006-06-19

申请人： Eric Blomiley ,  Nirmal Ramaswamy ,  Ross Dando ,  Joel Drewes ,  Alan Colwell ,  Eduardo Tovar

发明人： Eric Blomiley ,  Nirmal Ramaswamy ,  Ross Dando ,  Joel Drewes ,  Alan Colwell ,  Eduardo Tovar

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： H01L21/67248 ,  C23C16/481 ,  C23C16/52 ,  C30B25/165 ,  C30B31/18

摘要： The invention includes deposition apparatuses configured to monitor the temperature of a semiconductor wafer substrate by utilizing conduits which channel radiation from the substrate to a detector/signal processor system. In particular aspects, the temperature of the substrate can be measured while the substrate is spinning within a reaction chamber. The invention also includes deposition apparatuses in which flow of mixed gases is controlled by mass flow controllers provided downstream of the location where the gases are mixed and/or where flow of gases is measured with mass flow measurement devices provided downstream of the location where the gases are mixed. Additionally, the invention encompasses deposition apparatuses in which mass flow controllers and/or mass flow measurement devices are provided upstream of a header which splits a source gas into multiple paths directed toward multiple different reaction chambers.

摘要翻译： 本发明包括沉积设备，其被配置为通过利用将辐射从衬底传送到检测器/信号处理器系统的管道来监测半导体晶片衬底的温度。 在特定方面，可以在衬底在反应室内旋转的同时测量衬底的温度。 本发明还包括沉积装置，其中混合气体的流动由设置在气体混合位置下游的质量流量控制器控制，和/或在气体流量测量时，质量流量测量装置设置在气体的位置的下游 混合 此外，本发明还包括沉积装置，其中质量流量控制器和/或质量流量测量装置设置在将源气体分成多个指向多个不同反应室的路径的集管的上游。

公开(公告)号：US20060180087A1

公开(公告)日：2006-08-17

申请号：US11399889

申请日：2006-04-07

申请人： Eric Blomiley ,  Joel Drewes ,  Nirmal Ramaswamy ,  Ross Dando

发明人： Eric Blomiley ,  Joel Drewes ,  Nirmal Ramaswamy ,  Ross Dando

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： C23C16/4586

摘要： This invention includes substrate susceptors which receive substrates to be deposited upon. In one implementation, a substrate susceptor includes a body having a substrate receiving side. The substrate receiving side has a face having a substrate receiving recess formed therein. The recess has an outer peripheral sidewall. At least three projections extend outwardly from a portion of the face. The projections respectively comprise a radially inner sidewall which extends outwardly from the recess outer peripheral sidewall to a projection upper surface. Other aspects and implementations are contemplated.

公开(公告)号：US20060180084A1

公开(公告)日：2006-08-17

申请号：US11399888

申请日：2006-04-07

申请人： Eric Blomiley ,  Joel Drewes ,  Nirmal Ramaswamy ,  Ross Dando

发明人： Eric Blomiley ,  Joel Drewes ,  Nirmal Ramaswamy ,  Ross Dando

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： C23C16/4586

摘要： This invention includes substrate susceptors which receive substrates to be deposited upon. In one implementation, a substrate susceptor includes a body having a substrate receiving side. The substrate receiving side has a face having a substrate receiving recess formed therein. The recess has an outer peripheral sidewall. At least three projections extend outwardly from a portion of the face. The projections respectively comprise a radially inner sidewall which extends outwardly from the recess outer peripheral sidewall to a projection upper surface. Other aspects and implementations are contemplated.

公开(公告)号：US20050223985A1

公开(公告)日：2005-10-13

申请号：US10822208

申请日：2004-04-08

申请人： Eric Blomiley ,  Nirmal Ramaswamy ,  Ross Dando ,  Joel Drewes ,  Alan Colwell ,  Eduardo Tovar

发明人： Eric Blomiley ,  Nirmal Ramaswamy ,  Ross Dando ,  Joel Drewes ,  Alan Colwell ,  Eduardo Tovar

IPC分类号： C23C16/00 ,  C23C16/48 ,  C23C16/52 ,  C30B25/16 ,  C30B31/18 ,  H01L21/00 ,  H01L21/66

CPC分类号： H01L21/67248 ,  C23C16/481 ,  C23C16/52 ,  C30B25/165 ,  C30B31/18

摘要： The invention includes deposition apparatuses configured to monitor the temperature of a semiconductor wafer substrate by utilizing conduits which channel radiation from the substrate to a detector/signal processor system. In particular aspects, the temperature of the substrate can be measured while the substrate is spinning within a reaction chamber. The invention also includes deposition apparatuses in which flow of mixed gases is controlled by mass flow controllers provided downstream of the location where the gases are mixed and/or where flow of gases is measured with mass flow measurement devices provided downstream of the location where the gases are mixed. Additionally, the invention encompasses deposition apparatuses in which mass flow controllers and/or mass flow measurement devices are provided upstream of a header which splits a source gas into multiple paths directed toward multiple different reaction chambers.

摘要翻译： 本发明包括沉积设备，其被配置为通过利用将辐射从衬底传送到检测器/信号处理器系统的管道来监测半导体晶片衬底的温度。 在特定方面，可以在衬底在反应室内旋转的同时测量衬底的温度。 本发明还包括沉积装置，其中混合气体的流动由设置在气体混合位置下游的质量流量控制器控制，和/或在气体流量测量时，质量流量测量装置设置在气体的位置的下游 混合 此外，本发明还包括沉积装置，其中质量流量控制器和/或质量流量测量装置设置在将源气体分成多个指向多个不同反应室的路径的集管的上游。

公开(公告)号：US20060213445A1

公开(公告)日：2006-09-28

申请号：US11444744

申请日：2006-05-31

申请人： Eric Blomiley ,  Nirmal Ramaswamy ,  Ross Dando ,  Joel Drewes

发明人： Eric Blomiley ,  Nirmal Ramaswamy ,  Ross Dando ,  Joel Drewes

IPC分类号： C23C16/00

CPC分类号： H01L21/67115 ,  C23C16/481 ,  C23C16/52

摘要： The invention includes deposition apparatuses having reflectors with rugged reflective surfaces configured to disperse light reflected therefrom, and/or having dispersers between lamps and a substrate. The invention also includes optical methods for utilization within a deposition apparatus for assessing the alignment of a substrate within the apparatus and/or for assessing the thickness of a layer of material deposited within the apparatus.

摘要翻译： 本发明包括具有反射器的沉积设备，其具有凹凸反射表面，其被配置为分散从其反射的光，和/或在灯和基板之间具有分散器。 本发明还包括用于在沉积设备中利用的光学方法，用于评估设备内的衬底的对准和/或用于评估沉积在设备内的材料层的厚度。