公开(公告)号：US09243330B2

公开(公告)日：2016-01-26

申请号：US12993562

申请日：2009-05-20

申请人： Ernst H. A. Granneman ,  Sebastiaan E. van Nooten

发明人： Ernst H. A. Granneman ,  Sebastiaan E. van Nooten

IPC分类号： C30B25/14 ,  C30B29/20 ,  C30B25/00 ,  C23C16/455 ,  C23C16/54 ,  H01L21/677 ,  C30B35/00

CPC分类号： C23C16/45544 ,  C23C16/45551 ,  C23C16/458 ,  C23C16/54 ,  C30B25/14 ,  C30B29/20 ,  C30B35/005 ,  H01L21/67784

摘要： Atomic layer deposition apparatus for depositing a film in a continuous fashion. The apparatus includes a process tunnel, extending in a transport direction and bounded by at least a first and a second wall. The walls are mutually parallel and allow a flat substrate to be accommodated there between. The apparatus further includes a transport system for moving a train of substrates or a continuous substrate in tape form, through the tunnel. At least the first wall of the process tunnel is provided with a plurality of gas injection channels that, viewed in the transport direction, are connected successively to a first precursor gas source, a purge gas source, a second precursor gas source and a purge gas source respectively, so as to create a tunnel segment that—in use—comprises successive zones containing a first precursor gas, a purge gas, a second precursor gas and a purge gas, respectively.

摘要翻译： 用于以连续方式沉积膜的原子层沉积装置。 该装置包括一个在输送方向上延伸并由至少第一和第二壁限定的加工隧道。 这些壁是相互平行的，并且允许在其间容纳平坦的基底。 该装置还包括用于通过隧道移动一列衬底或带状连续衬底的传送系统。 至少过程隧道的第一壁设置有多个气体注入通道，从输送方向看，连续连接到第一前体气体源，吹扫气体源，第二前体气体源和吹扫气体 源，以便产生在使用中的隧道段，其包括分别包含第一前体气体，吹扫气体，第二前体气体和吹扫气体的连续区域。

公开(公告)号：US20110124199A1

公开(公告)日：2011-05-26

申请号：US12993562

申请日：2009-05-20

申请人： Ernst H. A. Granneman ,  Sebastiaan E. van Nooten

发明人： Ernst H. A. Granneman ,  Sebastiaan E. van Nooten

IPC分类号： H01L21/18 ,  C23C16/455 ,  C23C16/458

CPC分类号： C23C16/45544 ,  C23C16/45551 ,  C23C16/458 ,  C23C16/54 ,  C30B25/14 ,  C30B29/20 ,  C30B35/005 ,  H01L21/67784

摘要： Atomic layer deposition apparatus for depositing a film in a continuous fashion. The apparatus includes a process tunnel, extending in a transport direction and bounded by at least a first and a second wall. The walls are mutually parallel and allow a flat substrate to be accommodated there between. The apparatus further includes a transport system for moving a train of substrates or a continuous substrate in tape form, through the tunnel. At least the first wall of the process tunnel is provided with a plurality of gas injection channels that, viewed in the transport direction, are connected successively to a first precursor gas source, a purgegas source, a second precursor gas source and a purge gas source respectively, so as to create a tunnel segment that—in use—comprises successive zones containing a first precursor gas, a purge gas, a second precursor gas and a purge gas, respectively.

摘要翻译： 用于以连续方式沉积膜的原子层沉积装置。 该装置包括一个在输送方向上延伸并由至少第一和第二壁限定的加工隧道。 这些壁是相互平行的，并且允许在其间容纳平坦的基底。 该装置还包括用于通过隧道移动一列衬底或带状连续衬底的传送系统。 至少过程隧道的第一壁设置有多个气体注入通道，从输送方向看，连续连接到第一前体气体源，净化气体源，第二前体气体源和吹扫气体源 以便产生在使用中的隧道段，其包括分别包含第一前体气体，吹扫气体，第二前体气体和吹扫气体的连续区域。

公开(公告)号：US20090291209A1

公开(公告)日：2009-11-26

申请号：US12123745

申请日：2008-05-20

申请人： Ernst H.A. Granneman ,  Sebastiaan E. van Nooten

发明人： Ernst H.A. Granneman ,  Sebastiaan E. van Nooten

IPC分类号： C23C16/455 ,  C23C16/54

CPC分类号： C23C16/45544 ,  C23C16/45551 ,  C23C16/458 ,  C23C16/54 ,  C30B25/14 ,  C30B29/20 ,  C30B35/005 ,  H01L21/67784

摘要： Atomic layer deposition apparatus for depositing a film in a continuous fashion. The apparatus includes a process tunnel, extending in a transport direction and bounded by at least a first and a second wall. The walls are mutually parallel and allow a flat substrate to be accommodated there between. The apparatus further includes a transport system for moving a train of substrates or a continuous substrate in tape form, through the tunnel. At least the first wall of the process tunnel is provided with a plurality of gas injection channels that, viewed in the transport direction, are connected successively to a first precursor gas source, a purge gas source, a second precursor gas source and a purge gas source respectively, so as to create a tunnel segment that—in use—comprises successive zones containing a first precursor gas, a purge gas, a second precursor gas and a purge gas, respectively.

摘要翻译： 用于以连续方式沉积薄膜的原子层沉积装置。 该装置包括一个在输送方向上延伸并由至少第一和第二壁限定的加工隧道。 这些壁是相互平行的，并且允许在其间容纳平坦的基底。 该装置还包括用于通过隧道移动一列衬底或带状连续衬底的传送系统。 至少过程隧道的第一壁设置有多个气体注入通道，从输送方向看，连续连接到第一前体气体源，吹扫气体源，第二前体气体源和吹扫气体 源，以便产生在使用中的隧道段，其包括分别包含第一前体气体，吹扫气体，第二前体气体和吹扫气体的连续区域。