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    Method for producing a light-emitting component
    1.
    发明授权
    Method for producing a light-emitting component 有权
    发光元件的制造方法

    公开(公告)号：US06221683B1

    公开(公告)日：2001-04-24

    申请号：US09450398

    申请日：1999-11-29

    申请人： Ernst Nirschl ,  Olaf Schönfeld

    发明人： Ernst Nirschl ,  Olaf Schönfeld

    IPC分类号： H01L2100

    CPC分类号： H01L33/40 ,  H01L33/0079

    摘要： The invention relates to a method for producing a light-emitting component. A sequence of layers including at least one active layer is formed on the front face of a basic substrate consisting of semiconductor material. Subsequently, the basic substrate is at least partially removed and the sequence of layers is connected to an external substrate. The basic substrate is removed by wet-chemical etching in an etching agent that acts selectively on the material of the basic substrate. A first metallic contact layer is then applied to an end surface of the sequence of layers, and a second metallic contact layer is applied to an end surface of the external substrate. The sequence of layers is connected to the external substrate by connecting the first metallic contact layer to the second metallic contact layer using heat, by means of eutectic bonding.

    摘要翻译： 本发明涉及一种发光元件的制造方法。 包括至少一个有源层的层序列形成在由半导体材料构成的基底衬底的正面上。 随后，基本衬底被至少部分去除，并且层序连接到外部衬底。 通过湿法化学蚀刻在基体衬底的材料上有选择地作用的蚀刻剂去除基本衬底。 然后将第一金属接触层施加到该层序列的端面，并且将第二金属接触层施加到外部基板的端表面。 通过共晶接合，通过使用热将第一金属接触层连接到第二金属接触层来将层序连接到外部基板。

    Method for producing semiconductor bodies with an MOVPE layer sequence
    2.
    发明授权
    Method for producing semiconductor bodies with an MOVPE layer sequence 失效
    制造具有MOVPE层序的半导体体的方法

    公开(公告)号：US06177352B1

    公开(公告)日：2001-01-23

    申请号：US09250868

    申请日：1999-02-16

    申请人： Olaf Schönfeld ,  Ernst Nirschl

    发明人： Olaf Schönfeld ,  Ernst Nirschl

    IPC分类号： H01L21316

    CPC分类号： H01L33/0095 ,  H01L21/30621 ,  H01L21/78 ,  H01L33/0062 ,  H01L33/20 ,  H01L33/22

    摘要： A method for producing at least one semiconductor body by metal organic vapor phase epitaxy (MOVPE). The semiconductor body is formed of a layer sequence with an active zone applied to a semiconductor wafer. By dry etching, the layer sequence is provided with at least one mesa trench whose depth is at least great enough that the active zone of the layer sequence is severed. Next, the composite including the semiconductor wafer and the layer sequence is severed in such a way that the at least one semiconductor body is created with at least one mesa edge.

    摘要翻译： 一种通过金属有机气相外延（MOVPE）生产至少一个半导体主体的方法。 半导体本体由具有施加到半导体晶片的有源区的层序列形成。 通过干蚀刻，层序列设置有至少一个台面沟槽，其深度至少足以使得层序列的活性区域被切断。 接下来，包括半导体晶片和层序列的复合物被切断，使得至少一个半导体本体具有至少一个台面边缘。