HIGH-THROUGHPUT LOCAL OXIDATION NANOLITHOGRAPHIC PROCESS
    1.
    发明申请
    HIGH-THROUGHPUT LOCAL OXIDATION NANOLITHOGRAPHIC PROCESS 审中-公开
    高通量局部氧化纳米方法

    公开(公告)号:US20100243472A1

    公开(公告)日:2010-09-30

    申请号:US12732518

    申请日:2010-03-26

    Abstract: In a lithographic process suitable for use in the manufacture of electronic components, oxidative reactions are employed to reproducibly fabricate patterns having micro- or nano-scale dimensions. An electrically-conductive template is fabricated to have a nanometer-scale sharp edge and describe a pattern having a micron-scale length. The oxidative reaction is mediated by a water meniscus connecting the sharp edge of the template and an oxidizable substrate. One suitable substrate is graphene. The template can be controllably positioned using a light lever method.

    Abstract translation: 在适用于制造电子部件的光刻工艺中,使用氧化反应可重复地制造具有微尺寸或纳米级尺寸的图案。 制造导电模板以具有纳米级的锋利边缘并描述具有微米级长度的图案。 氧化反应由连接模板的锋利边缘和可氧化底物的水弯月面介导。 一个合适的基底是石墨烯。 模板可以使用轻型杠杆方式可控地定位。

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