公开(公告)号：US20100193003A1

公开(公告)日：2010-08-05

申请号：US12501582

申请日：2009-07-13

Applicant: Eun-kyung LEE ,  Byoung-Iyong CHOI ,  Sang-jin LEE

Inventor： Eun-kyung LEE ,  Byoung-Iyong CHOI ,  Sang-jin LEE

IPC: H01L35/20 ,  H01R43/00 ,  H01L35/00 ,  H01L35/34

CPC classification number: H01L35/26 ,  H01L35/32 ,  Y10T29/49002

Abstract: A thermoelectric device and a method of manufacturing the same are provided. The thermoelectric device may include a nanowire having nanoparticles which are disposed on one of an exterior surface of the nanowire and an interior of the nanowire.

Abstract translation: 提供了热电装置及其制造方法。 热电装置可以包括具有纳米线的纳米线，纳米线设置在纳米线的外表面和纳米线的内部之一上。

公开(公告)号：US20090197416A1

公开(公告)日：2009-08-06

申请号：US12421662

申请日：2009-04-10

Applicant: Eun-kyung LEE ,  Byoung-Iyong CHOI

Inventor： Eun-kyung LEE ,  Byoung-Iyong CHOI

IPC: H01L21/306

CPC classification number: C30B29/06 ,  B82Y30/00 ,  C30B11/12 ,  C30B25/00 ,  C30B29/60 ,  Y10T428/2933

Abstract: Silicon nano wires having silicon nitride shells and a method of manufacturing the same are provided. Each silicon nano wire has a core portion formed of silicon, and a shell portion formed of silicon nitride surrounding the core portion. The method includes removing silicon oxide formed on the shell of the silicon nano wire and forming a silicon nitride shell.

Abstract translation: 提供了具有氮化硅壳的硅纳米线及其制造方法。 每个硅纳米线具有由硅形成的芯部分和由围绕芯部分的氮化硅形成的壳部分。 该方法包括去除形成在硅纳米线的外壳上并形成氮化硅壳的氧化硅。