公开(公告)号：US20100193003A1

公开(公告)日：2010-08-05

申请号：US12501582

申请日：2009-07-13

Applicant: Eun-kyung LEE ,  Byoung-Iyong CHOI ,  Sang-jin LEE

Inventor： Eun-kyung LEE ,  Byoung-Iyong CHOI ,  Sang-jin LEE

IPC: H01L35/20 ,  H01R43/00 ,  H01L35/00 ,  H01L35/34

CPC classification number: H01L35/26 ,  H01L35/32 ,  Y10T29/49002

Abstract: A thermoelectric device and a method of manufacturing the same are provided. The thermoelectric device may include a nanowire having nanoparticles which are disposed on one of an exterior surface of the nanowire and an interior of the nanowire.

Abstract translation: 提供了热电装置及其制造方法。 热电装置可以包括具有纳米线的纳米线，纳米线设置在纳米线的外表面和纳米线的内部之一上。

公开(公告)号：US20090197416A1

公开(公告)日：2009-08-06

申请号：US12421662

申请日：2009-04-10

Applicant: Eun-kyung LEE ,  Byoung-Iyong CHOI

Inventor： Eun-kyung LEE ,  Byoung-Iyong CHOI

IPC: H01L21/306

CPC classification number: C30B29/06 ,  B82Y30/00 ,  C30B11/12 ,  C30B25/00 ,  C30B29/60 ,  Y10T428/2933

Abstract: Silicon nano wires having silicon nitride shells and a method of manufacturing the same are provided. Each silicon nano wire has a core portion formed of silicon, and a shell portion formed of silicon nitride surrounding the core portion. The method includes removing silicon oxide formed on the shell of the silicon nano wire and forming a silicon nitride shell.

Abstract translation: 提供了具有氮化硅壳的硅纳米线及其制造方法。 每个硅纳米线具有由硅形成的芯部分和由围绕芯部分的氮化硅形成的壳部分。 该方法包括去除形成在硅纳米线的外壳上并形成氮化硅壳的氧化硅。

公开(公告)号：US20110132002A1

公开(公告)日：2011-06-09

申请号：US12957075

申请日：2010-11-30

Applicant: Eun-kyung LEE ,  Byoung-lyong CHOI ,  Dongmok WHANG ,  Sang-jin LEE ,  Jong-woon LEE

Inventor： Eun-kyung LEE ,  Byoung-lyong CHOI ,  Dongmok WHANG ,  Sang-jin LEE ,  Jong-woon LEE

IPC: F25B21/02 ,  H01L35/32 ,  H01L35/34

CPC classification number: H01L35/32 ,  B82Y10/00 ,  H01L29/0665 ,  H01L35/26

Abstract: A core-shell nanowire with an uneven surface structure can be advantageously used in thermoelectric devices. The core-shell nanowire with the uneven surface structure includes a core region and a shell region, wherein the uneven surface structure is formed in the shell region.

Abstract translation: 具有不均匀表面结构的核 - 壳纳米线可有利地用于热电装置。 具有不均匀表面结构的核 - 壳纳米线包括芯区域和壳区域，其中不均匀表面结构形成在壳区域中。

公开(公告)号：US20100213438A1

公开(公告)日：2010-08-26

申请号：US12708664

申请日：2010-02-19

Applicant: Kyung-sang CHO ,  Byoung-lyong CHOI ,  Eun-kyung LEE ,  Tae-ho KIM ,  Sang-jin LEE

Inventor： Kyung-sang CHO ,  Byoung-lyong CHOI ,  Eun-kyung LEE ,  Tae-ho KIM ,  Sang-jin LEE

IPC: H01L33/06

CPC classification number: H01L51/502 ,  B82Y20/00 ,  B82Y30/00 ,  H01L33/14 ,  H01L51/0003 ,  H01L51/0007 ,  H01L51/5036 ,  H01L51/5048 ,  H01L51/5096

Abstract: A quantum dot light emitting device includes; a substrate, a first electrode disposed on the substrate, a second electrode disposed substantially opposite to the first electrode, a first charge transport layer disposed between the first electrode and the second electrode, a quantum dot light emitting layer disposed between the first charge transport layer and one of the first electrode and the second electrode, and at least one quantum dot including layer disposed between the quantum dot light emitting layer and the first charge transport layer, wherein the at least one quantum dot including layer has an energy band level different from an energy band level of the quantum dot light emitting layer.

Abstract translation: 量子点发光器件包括： 衬底，设置在衬底上的第一电极，与第一电极基本相对设置的第二电极，设置在第一电极和第二电极之间的第一电荷传输层，设置在第一电荷传输层之间的量子点发光层 和第一电极和第二电极中的一个以及设置在量子点发光层和第一电荷传输层之间的至少一个量子点包括层，其中所述至少一个量子点包含层具有与 量子点发光层的能带水平。

公开(公告)号：US20110220165A1

公开(公告)日：2011-09-15

申请号：US13044878

申请日：2011-03-10

Applicant: Eun-kyung LEE ,  Byoung-lyong CHOI ,  Gyeong S. HWANG

Inventor： Eun-kyung LEE ,  Byoung-lyong CHOI ,  Gyeong S. HWANG

IPC: H01L35/12 ,  H01L35/34

CPC classification number: H01L35/32 ,  H01L35/22

Abstract: A thermoelectric device includes: a first region; a second region; and a thermoelectric body disposed between the first region and the second region, where the thermoelectric body includes a vacancy.

Abstract translation: 热电装置包括：第一区域; 第二区域 以及设置在所述第一区域和所述第二区域之间的热电体，其中所述热电体包括空位。

公开(公告)号：US20100208493A1

公开(公告)日：2010-08-19

申请号：US12687290

申请日：2010-01-14

Applicant: Byoung-lyong CHOI ,  Hong-seok LEE ,  Jong-min KIM ,  Eun-kyung LEE

Inventor： Byoung-lyong CHOI ,  Hong-seok LEE ,  Jong-min KIM ,  Eun-kyung LEE

IPC: F21V7/04 ,  H01L33/00

CPC classification number: G02B6/0035 ,  G02B6/0038

Abstract: A light guide plate includes a plurality of quantum dots on at least one of a surface of the light guide plate and inside the light guide plate, wherein the plurality of quantum dots emit light having a different wavelength than a light incident thereto.

Abstract translation: 导光板在导光板的表面和导光板的至少一个上包括多个量子点，其中多个量子点发射具有与入射到其上的光不同的波长的光。

公开(公告)号：US20110244662A1

公开(公告)日：2011-10-06

申请号：US12976874

申请日：2010-12-22

Applicant: Eun-kyung LEE ,  Byoung-lyong CHOI ,  Dong-mok WHANG ,  Jae-hyun LEE

Inventor： Eun-kyung LEE ,  Byoung-lyong CHOI ,  Dong-mok WHANG ,  Jae-hyun LEE

IPC: H01L21/20

CPC classification number: H01L21/02527 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  C01B2204/04 ,  C23C16/0272 ,  C23C16/26 ,  C30B25/02 ,  C30B29/08 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/0262

Abstract: A method of manufacturing graphene includes forming a germanium layer on a surface of a substrate, and forming the graphene directly on the germanium layer by supplying carbon-containing gas into a chamber in which the substrate is disposed.

Abstract translation: 制造石墨烯的方法包括在基板的表面上形成锗层，并且通过将含碳气体供给到其中设置基板的室中，直接在锗层上形成石墨烯。

公开(公告)号：US20110133153A1

公开(公告)日：2011-06-09

申请号：US12959501

申请日：2010-12-03

Applicant: Eun-kyung LEE ,  Dong-mok WHANG ,  Byoung-lyong CHOI ,  Sun-hwak WOO

Inventor： Eun-kyung LEE ,  Dong-mok WHANG ,  Byoung-lyong CHOI ,  Sun-hwak WOO

IPC: H01L29/06 ,  H01L21/02 ,  B82Y99/00 ,  B82Y40/00

CPC classification number: B82Y40/00 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/0665 ,  H01L31/035209 ,  H01L31/035227

Abstract: Provided are a porous nanostructure and a method of manufacturing the same. The porous nanostructure includes a plurality of pores disposed on an exterior surface of a nanostructure, wherein at least a portion of the plurality of pores extend inside the nanostructure.

Abstract translation: 提供一种多孔纳米结构及其制造方法。 多孔纳米结构包括设置在纳米结构的外表面上的多个孔，其中多个孔的至少一部分在纳米结构内部延伸。

公开(公告)号：US20100213434A1

公开(公告)日：2010-08-26

申请号：US12560768

申请日：2009-09-16

Applicant: Eun-kyung LEE ,  Dong-mok WHANG ,  Byoung-lyong CHOI ,  Byung-sung KIM

Inventor： Eun-kyung LEE ,  Dong-mok WHANG ,  Byoung-lyong CHOI ,  Byung-sung KIM

IPC: H01L29/16 ,  H01L21/205

CPC classification number: H01L21/02532 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639

Abstract: A method of synthesizing a nanowire. The method includes disposing a first oxide layer including germanium (Ge) on a substrate, forming a second oxide layer including a nucleus by annealing the first oxide layer, and growing a nanowire including Ge from the nucleus by a chemical vapor deposition (“CVD”) method.

Abstract translation: 一种合成纳米线的方法。 该方法包括在基板上设置包括锗（Ge）的第一氧化物层，通过退火第一氧化物层形成包括核的第二氧化物层，并通过化学气相沉积（“CVD”）从核中生长包括锗的纳米线 ） 方法。

公开(公告)号：US20120141700A1

公开(公告)日：2012-06-07

申请号：US13229183

申请日：2011-09-09

Applicant: Byoung-lyong CHOI ,  Eun-kyung LEE ,  Dong-mok WHANG

Inventor： Byoung-lyong CHOI ,  Eun-kyung LEE ,  Dong-mok WHANG

IPC: B32B1/08 ,  C23C16/56 ,  B05D3/00 ,  B32B3/00 ,  B32B3/10 ,  C23C16/26 ,  C23F1/00 ,  B82Y40/00

CPC classification number: H01L21/02381 ,  C01B32/182 ,  H01L21/02428 ,  H01L21/02444 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/02527 ,  H01L21/0259 ,  H01L21/02606 ,  H01L21/02664 ,  Y10T428/13 ,  Y10T428/24273 ,  Y10T428/24479 ,  Y10T428/30

Abstract: A graphene structure and a method of forming the same may include a graphene formed in a three-dimensional (3D) shape, e.g., a column shape, a stacking structure, and a three-dimensionally connected structure. The graphene structure can be formed by using Ge.

Abstract translation: 石墨烯结构及其形成方法可以包括以三维（3D）形状形成的石墨烯，例如柱状，堆叠结构和三维连接的结构。 可以使用Ge形成石墨烯结构。