公开(公告)号：US20230309416A1

公开(公告)日：2023-09-28

申请号：US18123729

申请日：2023-03-20

Applicant: Everspin Technologies, Inc.

Inventor： Sumio IKEGAWA ,  Han Kyu Lee ,  Sanjeev AGGARWAL ,  Jijun SUN ,  Syed M. ALAM ,  Tom ANDRE

IPC: H10N52/80 ,  H10B61/00 ,  H10N50/85 ,  H10N52/00 ,  H10N52/01

CPC classification number: H10N52/80 ,  H10B61/22 ,  H10N50/85 ,  H10N52/00 ,  H10N52/01

Abstract: The present disclosure is drawn to, among other things, a magnetoresistive device and a magnetoresistive memory comprising a plurality of such magnetoresistive devices. In some aspects, a magnetoresistive device may include a magnetically fixed region, a magnetically free region above or below the magnetically fixed region, and an intermediate region positioned between the magnetically fixed region and the magnetically free region, wherein the intermediate region includes a first dielectric material. The magnetoresistive device may also include encapsulation layers formed on opposing side walls of the magnetically free region, wherein the encapsulation layers include the first dielectric material.