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公开(公告)号：US12122798B2
公开(公告)日：2024-10-22
申请号：US17304788
申请日：2021-06-25
CPC分类号： C07F7/30 , C01B33/08 , C07F7/12 , C07F7/16 , C01P2002/86
摘要： The invention provides disilenes, germasilenes and neopentatetrelanes, a method for the preparation thereof and use thereof.
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公开(公告)号：US20230048977A1
公开(公告)日：2023-02-16
申请号：US17933492
申请日：2022-09-20
摘要： A trichlorogermanide of formula (I): [R4N]/[R4P]Cl[GeCl3] (I), where R is Me, Et, iPr, nBu, or Ph, tris(trichlorosilyl)germanide of formula (II): [R4N]/[R4P][Ge(SiCl3)3] (II), where R is Me, Et, iPr, nBu, or Ph, a tris(trichlorosilyl)germanide adduct of GaCl3 of formula (III): [Ph4P][Ge(SiCl3)3*GaCl3], and a tris(trichlorosilyl)germanide adduct of BBr3 of formula (IV): [Ph4P][Ge(SiCl3)3*BBr3]. Also, methods for preparing the trichlorogermanides of formula (I), the tris(trichlorosilyl)germanide of formula (II), the tris(trichlorosilyl)germanide adduct of BBr3 of formula (IV).
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公开(公告)号：US11691996B2
公开(公告)日：2023-07-04
申请号：US17933491
申请日：2022-09-20
CPC分类号： C07F7/30 , C07F7/025 , C07F19/005
摘要： A trichlorogermanide of formula (I): [R4N]/[R4P]Cl[GeCl3] (I), where R is Me, Et, iPr, nBu, or Ph, tris(trichlorosilyl)germanide of formula (II): [R4N]/[R4P][Ge(SiCl3)3] (II), where R is Me, Et, iPr, nBu, or Ph, a tris(trichlorosilyl)germanide adduct of GaCl3 of formula (III): [Ph4p][Ge(SiCl3)3*GaCl3], and a tris(trichlorosilyl)germanide adduct of BBr3 of formula (IV): [Ph4P[]Ge(SiCl3)3*BBr3]. Also, methods for preparing the trichlorogermanides of formula (I), the tris(trichlorosilyl)germanide of formula (II), the tris(trichlorosilyl)germanide adduct of BBr3 of formula (IV).
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公开(公告)号：US20230094269A1
公开(公告)日：2023-03-30
申请号：US17933491
申请日：2022-09-20
摘要： A trichlorogermanide of formula (I): [R4N]/[R4P]Cl[GeCl3] (I), where R is Me, Et, iPr, nBu, or Ph, tris(trichlorosilyl)germanide of formula (II): [R4N]/[R4P][Ge(SiCl3)3] (II), where R is Me, Et, iPr, nBu, or Ph, a tris(trichlorosilyl)germanide adduct of GaCl3 of formula (III): [Ph4P][Ge(SiCl3)3*GaCl3], and a tris(trichlorosilyl)germanide adduct of BBr3 of formula (IV): [Ph4P][Ge(SiCl3)3*BBr3]. Also, methods for preparing the trichlorogermanides of formula (I), the tris(trichlorosilyl)germanide of formula (II), the tris(trichlorosilyl)germanide adduct of BBr3 of formula (IV).
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公开(公告)号：US11053263B2
公开(公告)日：2021-07-06
申请号：US16774682
申请日：2020-01-28
摘要： A trichlorogermanide of formula (I): [R4N]/[R4P]Cl[GeCl3] (I), where R is Me, Et, iPr, nBu, or Ph, tris(trichlorosilyl)germanide of formula (II): [R4N]/[RrP][Ge(SiCl3)3] (II), where R is Me, Et, iPr, nBu, or Ph, a tris(trichlorosilyl)germanide adduct of GaCl3 of formula (III): [Ph4P][Ge(SiCl3)3*GaCl3], and a tris(trichlorosilyl)germanide adduct of BBr3 of formula (IV): [Ph4P][Ge(SiCl3)3*BBr3]. Also, methods for preparing the trichlorogermanides of formula (I), the tris(trichlorosilyl)germanide of formula (II), the tris(trichlorosilyl)germanide adduct of BBr3 of formula (IV).
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6.发明授权公开(公告)号：US11851342B2
公开(公告)日：2023-12-26
申请号：US17309253
申请日：2019-11-07
IPC分类号： C01G17/00
CPC分类号： C01G17/006
摘要： A process can be used for the preparation of tris(trichlorosilyl)dichlorogallylgermane, which is a chlorinated, uncharged substance.
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公开(公告)号：US11555045B2
公开(公告)日：2023-01-17
申请号：US17308590
申请日：2021-05-05
摘要： A trichlorogermanide of formula (I): [R4N]/[R4P]Cl[GeCl3] (I), where R is Me, Et, iPr, nBu, or Ph, tris(trichlorosilyl)germanide of formula (II): [R4N]/[R4P][Ge(SiCl3)3] (II), where R is Me, Et, iPr, nBu, or Ph, a tris(trichlorosilyl)germanide adduct of GaCl3 of formula (III): [Ph4P][Ge(SiCl3)3*GaCl3], and a tris(trichlorosilyl)germanide adduct of BBr3 of formula (IV): [Ph4P][Ge(SiCl3)3*BBr3]. Also, methods for preparing the trichlorogermanides of formula (I), the tris(trichlorosilyl)germanide of formula (II), the tris(trichlorosilyl)germanide adduct of BBr3 of formula (IV).
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8.发明申请公开(公告)号：US20220017380A1
公开(公告)日：2022-01-20
申请号：US17309253
申请日：2019-11-07
IPC分类号： C01G17/00
摘要： A process can be used for the preparation of tris(trichlorosilyl)dichlorogallylgermane, which is a chlorinated, uncharged substance.
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公开(公告)号：US20200180966A1
公开(公告)日：2020-06-11
申请号：US16618196
申请日：2018-05-23
摘要： Triphenylgermylsilane (Ph3Ge—SiH3) is useful for the production of germanium-silicon layers (Ge—Si) or as transfer agent of silane groups (SiH3). Further, a method describes the production of triphenylgermylsilane (Ph3Ge—SiH3) by reducing trichlorosilyltriphenylgermane (Ph3Ge—SiCl3) with a hydride in solution, and another method describes the production of trichlorosilyltrichlorogermane (C3Ge—SiCl3) by reacting trichlorosilyltriphenylgermane (Ph3Ge—SiCl3) with hydrogen chloride (HCl) in the presence of AlCl3 in solution. In addition, trichlorosilyltrichlorogermane is also used for the production of germanium-silicon layers (Ge—Si).
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公开(公告)号：US11795184B2
公开(公告)日：2023-10-24
申请号：US17933492
申请日：2022-09-20
CPC分类号： C07F7/30 , C07F7/025 , C07F19/005
摘要： A trichlorogermanide of formula (I): [R4N]/[R4P]Cl[GeCl3] (I), where R is Me, Et, iPr, nBu, or Ph, tris(trichlorosilyl)germanide of formula (II): [R4N]/[R4P][Ge(SiCl3)3] (II), where R is Me, Et, iPr, nBu, or Ph, a tris(trichlorosilyl)germanide adduct of GaCl3 of formula (III): [Ph4P][Ge(SiCl3)3*GaCl3], and a tris(trichlorosilyl)germanide adduct of BBr3 of formula (IV): [Ph4P][Ge(SiCl3)3*BBr3]. Also, methods for preparing the trichlorogermanides of formula (I), the tris(trichlorosilyl)germanide of formula (II), the tris(trichlorosilyl)germanide adduct of BBr3 of formula (IV).
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