公开(公告)号：US20140141584A1

公开(公告)日：2014-05-22

申请号：US14165187

申请日：2014-01-27

申请人： FAIRCHILD KOREA SEMICONDUCTOR LTD.

发明人： Jin-myung KIM ,  Se-woong OH ,  Jae-gil LEE ,  Young-chul CHOI ,  Ho-cheol JANG

IPC分类号： H01L29/66

CPC分类号： H01L29/66712 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/4238 ,  H01L29/7395 ,  H01L29/7802

摘要： A power semiconductor device includes: a drain region of a first conductive type; a drift region of a first conductive type formed on the drain region; a first body region of a second conductive type formed below an upper surface of the drift region; a second body region of a second conductive type formed below the upper surface of the drift region and in the first body region; a third body region of a second conductive type formed by protruding downwards from a lower end of the first body region; a source region of a first conductive type formed below the upper surface of the drift region and in the first body region; and a gate insulating layer formed on channel regions of the first body region and on the drift region between the first body regions.

摘要翻译： 功率半导体器件包括：第一导电类型的漏极区域; 形成在漏区上的第一导电类型的漂移区; 形成在所述漂移区域的上表面下方的第二导电类型的第一体区; 第二导电类型的第二体区，形成在所述漂移区的上表面下方和所述第一体区中; 第二导电类型的第三体区域，从第一体区域的下端向下突出形成; 形成在所述漂移区域的上表面下方的所述第一导电类型的源极区域和所述第一体区域中; 以及栅极绝缘层，形成在第一体区的沟道区域和第一体区之间的漂移区上。