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1.
公开(公告)号:US10818582B2
公开(公告)日:2020-10-27
申请号:US16680649
申请日:2019-11-12
IPC分类号: H01L23/49 , H01L23/495 , H01L23/492 , H01L21/56 , H01L21/48 , H01L23/31
摘要: In a general aspect, a method for producing a packaged semiconductor device can include coupling a semiconductor device to a leadframe structure having a signal lead that is electrically coupled with the semiconductor device. The method can also include forming, with a laser, a groove in the signal lead, the groove having a first sidewall and a second sidewall, and applying solder plating to the signal lead, including the first sidewall and the second sidewall of the groove. The method can further include separating, at the groove, the signal lead into a first portion and a second portion, such that the second portion of the signal lead is separated from the metal leadframe structure.
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2.
公开(公告)号:US10483192B2
公开(公告)日:2019-11-19
申请号:US15982616
申请日:2018-05-17
IPC分类号: H01L23/49 , H01L23/495 , H01L23/492 , H01L21/56 , H01L21/48 , H01L23/31
摘要: In a general aspect, a method for producing a packaged semiconductor device can include coupling a semiconductor device to a leadframe structure having a signal lead that is electrically coupled with the semiconductor device. The method can also include encapsulating at least a portion of the semiconductor device and at least a portion of the leadframe structure in a molding compound. At least a segment of the signal lead can be exposed outside the molding compound. A surface of the molding compound can define a primary plane of the packaged semiconductor device. The method can further include forming, with a laser, a groove in the segment, applying solder plating to the segment, including the groove, and separating, at the groove, the segment into a first portion and a second portion, such that the second portion of the segment is separated from the leadframe structure.
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3.
公开(公告)号:US09978668B1
公开(公告)日:2018-05-22
申请号:US15407918
申请日:2017-01-17
IPC分类号: H01L23/495 , H01L23/31 , H01L23/492 , H01L21/48
CPC分类号: H01L23/492 , H01L21/4821 , H01L21/561 , H01L23/3107 , H01L23/49548 , H01L23/49582
摘要: In a general aspect, a packaged semiconductor device can include a semiconductor device and a metal leadframe structure having a signal lead that is electrically coupled with the semiconductor device. The device can also include a molding compound encapsulating at least a portion of the metal leadframe structure. At least a portion of the signal lead can be exposed outside the molding compound. The device can further include a solder plating disposed on exposed portions of the metal leadframe structure. In the device, a flank of the signal lead can have a surface area. At first portion of the surface area of the flank can be defined by the solder plating, and a second portion of the surface area of the flank can be defined by exposed metal of the metal leadframe structure. A perimeter of a surface of the exposed metal can have at least one curved edge.
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