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公开(公告)号：US20180188316A1
公开(公告)日：2018-07-05
申请号：US15910766
申请日：2018-03-02
发明人： Yiqiang Chen , Yunfei En , Xiaowen Zhang , Yun Huang , Yudong Lu
CPC分类号： G01R31/2642 , G01R31/2601 , G01R31/2639 , G01R31/2858
摘要： A method for predicting remaining life of electromigration failure is disclosed. The methods includes: establishing an electromigration life model of a MOS device; acquiring a normal electromigration failure lifetime τ1, based on a current density and a first environment temperature under a preset normal operating condition and the electromigration life model; acquiring a current density stress, based on a target prognostic point τ2, a second environment temperature and the electromigration life model; inputting the current density stress into a MOS device electromigration failure warning circuit based on a prognostic cell; and if the prognostic circuit of EM failure for a MOS device outputs a high level after a time τ3, acquiring a remaining life of electromigration failure corresponding to τ2′ based on τ1, τ2 and τ3. A device for remaining life prediction for electromigration failure is also disclosed.
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公开(公告)号：US10732216B2
公开(公告)日：2020-08-04
申请号：US15910766
申请日：2018-03-02
发明人： Yiqiang Chen , Yunfei En , Xiaowen Zhang , Yun Huang , Yudong Lu
摘要： A method for predicting remaining life of electromigration failure is disclosed. The methods includes: establishing an electromigration life model of a MOS device; acquiring a normal electromigration failure lifetime τ1, based on a current density and a first environment temperature under a preset normal operating condition and the electromigration life model; acquiring a current density stress, based on a target prognostic point τ2, a second environment temperature and the electromigration life model; inputting the current density stress into a MOS device electromigration failure warning circuit based on a prognostic cell; and if the prognostic circuit of EM failure for a MOS device outputs a high level after a time τ3, acquiring a remaining life of electromigration failure corresponding to τ2′ based on τ1, τ2 and τ3. A device for remaining life prediction for electromigration failure is also disclosed.
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公开(公告)号：US20140232428A1
公开(公告)日：2014-08-21
申请号：US14348849
申请日：2013-06-08
发明人： Yiqiang Chen , Yunfei En , Yun Huang , Yudong Lu , Qingzhong Xiao
IPC分类号： G01R31/28
CPC分类号： G01R31/2853 , G01R31/2856 , G01R31/30
摘要： A prognostic circuit of EM failure for IC is disclosed, which includes a current monitoring module, the current monitoring module includes a current output module electrically connected with a monitoring metal wire, and one or more conductive metals covered by an oxide layer and electrically insulated with the monitoring metal wire, the current output module includes at least one current source, the conductive metal is electrically connected with the output port of the current monitoring module, and the monitoring metal wire is surrounded by the conductive metal. The above prognostic circuit can give a warning for short-circuit failure caused by a whisker created by EM. Meanwhile, the prognostic circuit of the present disclosure can also be added a resistance warning, and it can indicate the failure of the resistance increased by EM and the short circuit caused by whisker, so as to greatly increase the warning efficiency of the EM.
摘要翻译： 公开了一种用于IC的EM故障的预测电路，其包括电流监测模块，电流监测模块包括与监测金属线电连接的电流输出模块和由氧化物层覆盖并与电绝缘的一个或多个导电金属 监视金属线，电流输出模块包括至少一个电流源，导电金属与电流监测模块的输出端口电连接，监测金属线被导电金属包围。 上述预测电路可以对由EM产生的晶须引起的短路故障发出警告。 同时，本公开的预测电路还可以增加电阻警告，并且可以指示EM增加的电阻的故障和晶须引起的短路，从而大大提高EM的警告效率。
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4.发明申请公开(公告)号：US20150051851A1
公开(公告)日：2015-02-19
申请号：US14348844
申请日：2013-06-08
发明人： Yiqiang Chen , Yunfei En , Xiaowen Zhang , Yun Huang , Yudong Lu
IPC分类号： G01R31/26
CPC分类号： G01R31/2642 , G01R31/2601 , G01R31/2639 , G01R31/2858
摘要： A method for predicting remaining life of electromigration failure is disclosed. The methods includes: establishing an electromigration life model of a MOS device; acquiring a normal electromigration failure lifetime τ1, based on a current density and a first environment temperature under a preset normal operating condition and the electromigration life model; acquiring a current density stress, based on a target prognostic point τ2, a second environment temperature and the electromigration life model; inputting the current density stress into a MOS device electromigration failure warning circuit based on a prognostic cell; and if the prognostic circuit of EM failure for a MOS device outputs a high level after a time τ3, acquiring a remaining life of electromigration failure corresponding to τ2′ based on τ1, τ2 and τ3. A device for remaining life prediction for electromigration failure is also disclosed.
摘要翻译： 公开了一种用于预测电迁移故障的剩余寿命的方法。 该方法包括：建立MOS器件的电迁移寿命模型; 在预设的正常运行条件和电迁移寿命模型的基础上，基于电流密度和第一环境温度获取正常的电迁移失效寿命τ1; 基于目标预后点τ2，第二环境温度和电迁移寿命模型获取电流密度应力; 将电流密度应力输入到基于预后单元的MOS器件电迁移故障警告电路中; 如果MOS器件的EM故障的预测电路在时间τ3之后输出高电平，则基于τ1，τ2和τ3获取对应于τ2'的电迁移故障的剩余寿命。 还公开了用于电迁移故障的剩余寿命预测的装置。
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公开(公告)号：US20190154475A1
公开(公告)日：2019-05-23
申请号：US15556702
申请日：2016-11-29
发明人： Yiqiang Chen , Yun Huang , Dengyun Lei , Yudong Lu , Yunfei En , Chunhua He , Liwei Wang
CPC分类号： G01D21/02 , G01D3/08 , G01R31/00 , G01R31/2801 , G01R31/2817
摘要： The present disclosure relates to a system and method for health monitoring and early warning for an electronic device. A sensor is used to monitor a physical parameter of a circuit board of a host electronic system of the electronic device to acquire sensor data, and transmit the acquired sensor data to an embedded control device. The sensor data includes at least one of current data, vibration data, temperature data and voltage data. The embedded control device is used to extract a feature from the sensor data to acquire feature data, and perform real-time analysis and prediction based on the feature data to obtain and display a prediction result. In this way, the user can be provided with real-time health monitoring and real-time prediction information for the host electronic system circuit board.
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公开(公告)号：US09952275B2
公开(公告)日：2018-04-24
申请号：US14348844
申请日：2013-06-08
发明人： Yiqiang Chen , Yunfei En , Xiaowen Zhang , Yun Huang , Yudong Lu
CPC分类号： G01R31/2642 , G01R31/2601 , G01R31/2639 , G01R31/2858
摘要： A method for predicting remaining life of electromigration failure is disclosed. The methods includes: establishing an electromigration life model of a MOS device; acquiring a normal electromigration failure lifetime τ1, based on a current density and a first environment temperature under a preset normal operating condition and the electromigration life model; acquiring a current density stress, based on a target prognostic point τ2, a second environment temperature and the electromigration life model; inputting the current density stress into a MOS device electromigration failure warning circuit based on a prognostic cell; and if the prognostic circuit of EM failure for a MOS device outputs a high level after a time τ3, acquiring a remaining life of electromigration failure corresponding to τ2′ based on τ1, τ2 and τ3. A device for remaining life prediction for electromigration failure is also disclosed.
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公开(公告)号：US10458823B2
公开(公告)日：2019-10-29
申请号：US15556702
申请日：2016-11-29
发明人： Yiqiang Chen , Yun Huang , Dengyun Lei , Yudong Lu , Yunfei En , Chunhua He , Liwei Wang
摘要： The present disclosure relates to a system and method for health monitoring and early warning for an electronic device. A sensor is used to monitor a physical parameter of a circuit board of a host electronic system of the electronic device to acquire sensor data, and transmit the acquired sensor data to an embedded control device. The sensor data includes at least one of current data, vibration data, temperature data and voltage data. The embedded control device is used to extract a feature from the sensor data to acquire feature data, and perform real-time analysis and prediction based on the feature data to obtain and display a prediction result. In this way, the user can be provided with real-time health monitoring and real-time prediction information for the host electronic system circuit board.
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公开(公告)号：US20190205196A1
公开(公告)日：2019-07-04
申请号：US15556751
申请日：2016-11-29
发明人： Yiqiang Chen , Dengyun Lei , Yunfei En , Wenxiao Fang , Lichao Hao , Yun Huang , Bo Hou , Yudong Lu
IPC分类号： G06F11/07 , G01R31/3177 , G06F11/30 , G06F11/34
CPC分类号： G06F11/079 , G01R31/14 , G01R31/3177 , G06F11/0736 , G06F11/0754 , G06F11/3013 , G06F11/3495
摘要： An on-chip TDDB degradation monitoring and failure early warning circuit for SoC. A control circuit module converts Q1 and Q0 signals into a switch state control signal and outputs the switch state control signal to a digital conversion module for TDDB performance degradation. A MOS transistor of a first MOS transistor circuit within the digital conversion module for TDDB performance degradation is in a stress state of a supply voltage, and a MOS transistor of a second MOS transistor circuit is in a non-stress state. The first and second MOS transistor circuits output a first frequency value and a second frequency value to the output selection module. The output selection module outputs the first frequency value from the digital conversion module to the counter B for recording, or outputs the second frequency value to the counter A for recording. The counter module determines the degradation level of TDDB performance.
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公开(公告)号：US09329228B2
公开(公告)日：2016-05-03
申请号：US14348849
申请日：2013-06-08
发明人： Yiqiang Chen , Yunfei En , Yun Huang , Yudong Lu , Qingzhong Xiao
CPC分类号： G01R31/2853 , G01R31/2856 , G01R31/30
摘要： A prognostic circuit of EM failure for IC is disclosed, which includes a current monitoring module, the current monitoring module includes a current output module electrically connected with a monitoring metal wire, and one or more conductive metals covered by an oxide layer and electrically insulated with the monitoring metal wire, the current output module includes at least one current source, the conductive metal is electrically connected with the output port of the current monitoring module, and the monitoring metal wire is surrounded by the conductive metal. The above prognostic circuit can give a warning for short-circuit failure caused by a whisker created by EM. Meanwhile, the prognostic circuit of the present disclosure can also be added a resistance warning, and it can indicate the failure of the resistance increased by EM and the short circuit caused by whisker, so as to greatly increase the warning efficiency of the EM.
摘要翻译： 公开了一种用于IC的EM故障的预测电路，其包括电流监测模块，电流监测模块包括与监测金属线电连接的电流输出模块和由氧化物层覆盖并与电绝缘的一个或多个导电金属 监视金属线，电流输出模块包括至少一个电流源，导电金属与电流监测模块的输出端口电连接，监测金属线被导电金属包围。 上述预测电路可以对由EM产生的晶须引起的短路故障发出警告。 同时，本公开的预测电路还可以增加电阻警告，并且可以指示EM增加的电阻的故障和晶须引起的短路，从而大大提高EM的警告效率。
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