Abstract:
A method and system for real-time, in-line calculations of opto-electronic properties and thickness of the layers of multi-layered transparent conductive oxide stacks of photovoltaic devices is provided. The method and system include taking measurements of each layer of the stack during deposition thereof. The measurements are then used to calculate the opto-electronic properties and thicknesses of the layers in real-time.
Abstract:
A method and apparatus for manufacturing a multi-layered structure includes forming a crystalline layer of a material by depositing an amorphous layer of the material on a heated substrate.
Abstract:
A method and system for real-time, in-line measurements of thicknesses of semiconductor layers of photovoltaic devices is provided. The method and system include taking ex-situ optical data measurements after deposition of the semiconductor layers. The measurements are then used to calculate the thicknesses of the layers in real-time using optical modeling software.
Abstract:
A method and system for real-time, in-line calculations of opto-electronic properties and thickness of the layers of multi-layered transparent conductive oxide stacks of photovoltaic devices is provided. The method and system include taking measurements of each layer of the stack during deposition thereof. The measurements are then used to calculate the opto-electronic properties and thicknesses of the layers in real-time.
Abstract:
Infrared detection is used to monitor the temperature within a vapor transport deposition processing chamber. Changes in temperature that occur when a substrate passes an infrared detector are detected and used to precisely locate a position of the substrate within the chamber. Position correction of the substrate can also be implemented.
Abstract:
Infrared detection is used to monitor the temperature within a vapor transport deposition processing chamber. Changes in temperature that occur when a substrate passes an infrared detector are detected and used to precisely locate a position of the substrate within the chamber. Position correction of the substrate can also be implemented.