公开(公告)号：US20190148576A1

公开(公告)日：2019-05-16

申请号：US16300132

申请日：2017-05-03

Applicant: FLISOM AG

Inventor： Thomas NETTER

IPC: H01L31/048 ,  H01L31/02 ,  H02S40/34 ,  H02S20/00

Abstract: A photovoltaic apparatus (1000) is provided including a front sheet (250) having a first portion (2501) and a second portion (2502). The photovoltaic apparatus further includes a back sheet (210) having a first portion (2101), a second portion (2102), and a first folded portion (2103), where the second portion of the front sheet is disposed between the second portion of the back sheet and the first folded portion of the back sheet. The photovoltaic apparatus further includes one or more photovoltaic devices (100) disposed between the first portion of the front sheet and the first portion of the back sheet, where each of the one or more photovoltaic devices includes an array of photovoltaic cells (105).

公开(公告)号：US20180358505A1

公开(公告)日：2018-12-13

申请号：US16060087

申请日：2016-12-13

Applicant: FLISOM AG

Inventor： Louis SCHAR ,  Thomas NETTER

IPC: H01L31/18 ,  H01L31/0465 ,  H01L31/02 ,  H01L31/048 ,  H01L31/054 ,  B32B37/26

Abstract: A photovoltaic apparatus (200) is provided including a back sheet (210) and a photovoltaic device (100) disposed over the back sheet. The photovoltaic device includes an array of photovoltaic cells (101-104) extending in a first direction; and a plurality of serial interconnects (191) having a length that extends in a second direction, wherein each serial interconnect is disposed between and electrically connects consecutive photovoltaic cells of the array. The photovoltaic apparatus further includes a front sheet (250) disposed over the photovoltaic device, the front sheet having a plurality of structures (220), wherein each structure has one or more edges (221) aligned with one of the serial interconnects.

公开(公告)号：US20190157482A1

公开(公告)日：2019-05-23

申请号：US16154709

申请日：2018-10-08

Applicant: FLISOM AG

Inventor： Roger ZILTENER ,  Thomas NETTER

IPC: H01L31/0463 ,  H01L31/0749 ,  H01L31/18

Abstract: A method for vias and monolithic interconnects in thin-film optoelectronic devices in which at least one line segment via hole is formed by laser drilling and passes through front-contact layers and semiconductive active layer, and in which laser drilling causes forming a CIGS-type wall of electrically conductive permanently metalized copper-rich CIGS-type alloy at the inner surface of the via hole, forming a conductive path between at least a portion of front-contact and a portion of back-contact layers, forming a bump-shaped raised portion at the surface of the front-contact layer, forming a raised portion of the back-contact layer, and optionally forming a raised portion of copper-rich CIGS-type alloy covering a portion of the front-contact layer. A thin-film CIGS device includes at least one line segment via hole obtainable by the method.

公开(公告)号：US20190081592A1

公开(公告)日：2019-03-14

申请号：US16082893

申请日：2017-02-23

Applicant: FLISOM AG

Inventor： John OLDRIDGE ,  Thomas NETTER ,  Roland KERN

IPC: H02S40/36 ,  H01L31/048 ,  H01L31/049 ,  H02S20/23

Abstract: A photovoltaic apparatus is provided including a first portion having a first surface facing a first direction; a second portion located in a different position in the first direction from the first portion; and a third portion located in a different position in the first direction from the first portion; a front sheet and a back sheet each extending at least partially through each of the first portion, the second portion, and the third portion. The photovoltaic apparatus further includes a first rigid folded portion connecting the first portion to the second portion, the first rigid folded portion including portions of the front sheet and the back sheet; and a second rigid folded portion connecting the first portion to the third portion, the second rigid folded portion including portions of the front sheet and the back sheet.

公开(公告)号：US20210242356A1

公开(公告)日：2021-08-05

申请号：US17189041

申请日：2021-03-01

Applicant: FLISOM AG

Inventor： Thomas NETTER

IPC: H01L31/048 ,  H02S40/36 ,  H02S30/10 ,  H02S20/23 ,  H01L31/05 ,  H02S40/34 ,  H01L31/02 ,  H02S20/00

Abstract: A photo photovoltaic apparatus (1000) is provided including a front sheet (250) having a first portion (2501) and a second portion (2502). The photovoltaic apparatus further includes a back sheet (210) having a first portion (2101), a second portion (2102), and a first folded portion (2103) where the second portion of the front sheet is disposed between the second portion of the back sheet and the first folded portion of the back sheet. The photovoltaic apparatus further deludes one or more photovoltaic devices (100) disposed between the first portion of the front sheet and the first portion of the back sheet, where each of the one or more photovoltaic devices includes an array of photovoltaic ceils (105).

公开(公告)号：US20200343396A1

公开(公告)日：2020-10-29

申请号：US16926581

申请日：2020-07-10

Applicant: FLISOM AG

Inventor： Louis SCHAR ,  Thomas NETTER

IPC: H01L31/0465 ,  B32B37/26 ,  H01L31/048 ,  H01L31/054 ,  H01L31/042 ,  H01L31/02 ,  H01L31/18

Abstract: A photovoltaic apparatus is provided including a back sheet and a photovoltaic device disposed over the back sheet. The photovoltaic device includes an array of photovoltaic cells extending in a first direction; and a plurality of serial interconnects having a length that extends in a second direction, wherein each serial interconnect is disposed between and electrically connects consecutive photovoltaic cells of the array. The photovoltaic apparatus further includes a front sheet disposed over the photovoltaic device, the front sheet having a plurality of structures, wherein each structure has one or more edges aligned with one of the serial interconnects.

公开(公告)号：US20180226527A1

公开(公告)日：2018-08-09

申请号：US15887595

申请日：2018-02-02

Applicant: FLISOM AG

Inventor： Reto PFEIFFER ,  Roger ZILTENER ,  Thomas NETTER

IPC: H01L31/05 ,  H01L31/02 ,  H01L31/0352 ,  H01L31/0224 ,  H01L31/046 ,  G06F17/50 ,  H01L31/0465 ,  H01L31/0463

CPC classification number: H01L31/0516 ,  G06F17/5077 ,  H01L31/0201 ,  H01L31/022433 ,  H01L31/035272 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0465 ,  H01L31/0508 ,  Y02E10/50

Abstract: A thin-film optoelectronic module device (100) and design method comprising at least three monolithically-interconnected cells (104, 106, 108) where at least one monolithically-interconnecting line (250) depicts a spatial periodic or quasi-periodic wave and wherein the optoelectronic surface of said thin-film optoelectronic module device (100) presents at least one set of at least three zones (210, 220, 230) having curves of substantially parallel monolithic interconnect lines. Border zones (210, 230) have a lower front-contact sheet resistance than that of internal zone (220). Said curves of substantially parallel interconnecting lines may comprise peaks of triangular or rounded shape, additional spatial periods that are smaller than a baseline period, and mappings from one curve to the adjacent curve such as in the case of non-rectangular module devices (100). The device (100) and design method are advantageous to reduce costs and materials to manufacture thin-film optoelectronic module devices (100) while increasing production yield, reliability, aesthetic appearance, and range of applications.

公开(公告)号：US20160359065A1

公开(公告)日：2016-12-08

申请号：US15111975

申请日：2015-01-26

Applicant: FLISOM AG

Inventor： Roger ZILTENER ,  Thomas NETTER

IPC: H01L31/0463 ,  H01L31/18 ,  H01L31/0749

CPC classification number: H01L31/0463 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

Abstract: A method for vias and monolithic interconnects in thin-film optoelectronic devices (100, 200) wherein at least one line segment via hole (163, 165, 165′, 167) is formed by laser drilling and passes through front-contact layers (150, 152, 154, 156, 158) and semiconductive active layer (130), and wherein laser drilling causes forming a CIGS-type wall (132, 134, 136, 138) of electrically conductive permanently metalized copper-rich CIGS-type alloy at the inner surface (135) of the via hole, thereby forming a conductive path between at least a portion of front-contact and a portion of back-contact layers (120, 124, 126, 128, 129), forming a bump-shaped raised portion (155) at the surface of the front-contact layer, forming a raised portion (125, 127, 127′) of the back-contact layer, and optionally forming a raised portion of copper-rich CIGS-type alloy (155′) covering a portion of the front-contact layer (150). A thin-film CIGS device comprises at least one line segment via hole obtainable by the method.

Abstract translation: 一种用于薄膜光电子器件（100,200）中的通孔和单片互连的方法，其中至少一个线段通孔（163,165,165'，167）通过激光钻孔形成并穿过前接触层（150） ，152,154,156,158）和半导体活性层（130），并且其中激光钻孔导致形成导电永久金属化的富铜CIGS型合金的CIGS型壁（132,134,136,138） 通孔的内表面（135），从而在前接触层的至少一部分和一部分后接触层（120,124,126,128,129）之间形成导电路径，形成凸起状 在前接触层的表面处形成凸起部分（155），形成背接触层的凸起部分（125,127,127'），并且可选地形成富铜CIGS型合金（155 '）覆盖前接触层（150）的一部分。 薄膜CIGS器件包括至少一个可通过该方法获得的线段通孔。