公开(公告)号：US09871107B2

公开(公告)日：2018-01-16

申请号：US14719999

申请日：2015-05-22

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： Bruce M. Green ,  Jenn Hwa Huang ,  Vikas S. Shilimkar

IPC: H01L23/48 ,  H01L21/768 ,  H01L21/70 ,  H01L29/778 ,  H01L29/20 ,  H01L23/66 ,  H01L23/522 ,  H01L29/66 ,  H01L21/306 ,  H01L21/762 ,  H01L29/417 ,  H01L49/02 ,  H01L29/06

CPC classification number: H01L29/2003 ,  H01L21/30621 ,  H01L21/76224 ,  H01L23/481 ,  H01L23/5227 ,  H01L23/66 ,  H01L28/10 ,  H01L29/0657 ,  H01L29/4175 ,  H01L29/66462 ,  H01L29/7787 ,  H01L2223/6605

Abstract: An embodiment of a device includes a semiconductor substrate, a transistor formed at the first substrate surface, a first conductive feature formed over the first substrate surface and electrically coupled to the transistor, and a second conductive feature covering only a portion of the second substrate surface to define a first conductor-less region. A cavity vertically aligned with the first conductive feature within the first conductor-less region extends into the semiconductor substrate. A dielectric medium may be disposed within the cavity and have a dielectric constant less than a dielectric constant of the semiconductor substrate. A method for forming the device may include forming a semiconductor substrate, forming a transistor on the semiconductor substrate, forming the first conductive feature, forming the second conductive feature, forming the conductor-less region, forming the cavity, and filling the cavity with the dielectric medium.