公开(公告)号：US20240250501A1

公开(公告)日：2024-07-25

申请号：US18494309

申请日：2023-10-25

Applicant: FUJIFILM BUSINESS INNOVATION CORP. ,  FUJIFILM CORPORATION

Inventor： Naoya SEKITA ,  Takeshi MINAMIRU ,  Yuto IWANE ,  Koga MIZUNO ,  Kazutaka TAKEDA ,  Atsushi MUKAI

IPC: H01S5/183

CPC classification number: H01S5/18311 ,  H01S5/18347 ,  H01S5/1835 ,  H01S5/18361 ,  H01S5/18394

Abstract: A surface-emitting type semiconductor laser includes a substrate, and a structure that includes a first multilayer-film reflective mirror of a first conductivity type formed on the substrate, an active layer formed on the first multilayer-film reflective mirror, and a second multilayer-film reflective mirror of a second conductivity type that is formed on the active layer and includes a current confinement layer, and that is a structure in which a shape of an aperture formed in the current confinement layer to represent a part not subjected to oxide confinement is a shape not including an axially symmetrical or point symmetrical part.