公开(公告)号：US12132297B2

公开(公告)日：2024-10-29

申请号：US17294446

申请日：2018-09-25

Applicant: Shenzhen Raysees AI Technology Co. Ltd.

Inventor： Yang Wang ,  Yongxiang He

IPC: H01S5/00 ,  H01S5/0225 ,  H01S5/0234 ,  H01S5/042 ,  H01S5/183 ,  H01S5/42 ,  H01S5/02345

CPC classification number: H01S5/423 ,  H01S5/0225 ,  H01S5/0234 ,  H01S5/04256 ,  H01S5/18361 ,  H01S5/02345 ,  H01S5/42

Abstract: The present invention discloses a VCSEL array that can function in at least two different operational modes. In one operational mode, the VCSEL array functions as a regular-patterned array; and in the other operational mode, the VCSEL array functions as an irregular-patterned array. Thus, the same VCSEL chip may be used as an illumination light source or a structural light method light source for 3D sensing, depending on the selected operational mode.

公开(公告)号：US12126137B2

公开(公告)日：2024-10-22

申请号：US17975219

申请日：2022-10-27

Applicant: Sony Corporation

Inventor： Susumu Sato ,  Tatsushi Hamaguchi ,  Shoichiro Izumi ,  Noriyuki Futagawa ,  Masamichi Ito ,  Jugo Mitomo ,  Hiroshi Nakajima

IPC: H01S5/00 ,  H01S5/183 ,  H01S5/343 ,  H01S5/042

CPC classification number: H01S5/18388 ,  H01S5/183 ,  H01S5/18327 ,  H01S5/18361 ,  H01S5/18369 ,  H01S5/18375 ,  H01S5/18377 ,  H01S5/34333 ,  H01S5/0425 ,  H01S5/04253 ,  H01S2304/02 ,  H01S2304/04

Abstract: A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21a and a second surface 21b that is opposed to the first surface 21a, an active layer 23 that faces the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 including a first surface 22a that faces the active layer 23 and a second surface 22b that is opposed to the first surface 22a are laminated; a first light reflection layer 41 that is provided on the first surface 21a side of the first compound semiconductor layer 21; and a second light reflection layer 42 that is provided on the second surface 22b side of the second compound semiconductor layer 22. The first light reflection layer 41 includes a concave mirror portion 43, and the second light reflection layer 42 has a flat shape.

公开(公告)号：US20240332905A1

公开(公告)日：2024-10-03

申请号：US18138446

申请日：2023-04-24

Applicant: ZHEJIANG BERXEL PHOTONICS CO., LTD.

Inventor： Jonas Horst KAPRAUN ,  Yao CUI ,  Yipeng JI ,  Constance Jui-hua CHANG-HASNAIN ,  Chihchiang SHEN

IPC: H01S5/183 ,  H01S5/068

CPC classification number: H01S5/18361 ,  H01S5/06821 ,  H01S5/18355

Abstract: The present disclosure provides a vertical cavity surface emitting laser, relating to the technical field of photoelectric devices. The vertical cavity surface emitting laser includes a substrate layer, a buffer layer, a first reflector layer, a light emitting layer, a polarization selective hybrid layer and an electrode layer that are stacked. The polarization selective hybrid layer includes a second reflector layer and a near wavelength grating layer integrated above the second reflector layer, where a period of a near wavelength grating is smaller than a wavelength of light in a propagating medium and larger than a wavelength of light in a semiconductor material of the vertical cavity surface emitting laser. The vertical cavity surface emitting laser can emit highly stable and highly polarized laser light, and is simple in structure and convenient to fabricate. The second reflector layer is thinner, which reduces the production cost.

公开(公告)号：US12107385B2

公开(公告)日：2024-10-01

申请号：US17111516

申请日：2020-12-04

Applicant: FUJIFILM Business Innovation Corp.

Inventor： Daisuke Iguchi ,  Kazuhiro Sakai

IPC: H01S5/0233 ,  G01B11/24 ,  G06V40/16 ,  H01S5/183 ,  H01S5/343 ,  H01S5/42

CPC classification number: H01S5/0233 ,  G01B11/24 ,  H01S5/423 ,  G06V40/166 ,  H01S5/18313 ,  H01S5/18361 ,  H01S5/3432 ,  H01S5/34353

Abstract: A light emitting device includes a wiring board having a first wiring layer and a second wiring layer adjacent to the first wiring layer via an insulating layer, a laser having a cathode electrode and an anode electrode, mounted on the wiring board, and driven through low-side driving, and a capacitive element mounted on the wiring board and configured to supply a drive current to the laser. The first wiring layer includes a cathode wire connected to the cathode electrode, and an anode wire connected to the anode electrode. The second wiring layer includes a reference potential wire connected to a reference potential. The reference potential wire overlaps the anode wire. The anode wire surrounds the capacitive element.

公开(公告)号：US20240305063A1

公开(公告)日：2024-09-12

申请号：US18423005

申请日：2024-01-25

Applicant: Apple Inc.

Inventor： Pengfei Qiao ,  James J. Dudley ,  Tong Chen

IPC: H01S5/183 ,  H01S5/11

CPC classification number: H01S5/18361 ,  H01S5/11 ,  H01S5/18313

Abstract: An optoelectronic device may include a first set of distributed Bragg reflective (DBR) layers, a second set of DBR layers, a gain region, and an enclosure layer between the gain region and the second set of DBR layers. In some cases, the enclosure layer defines a non-limiting mode oxide aperture. The optoelectronic device may also include a high contrast grating (HCG) mirror element disposed on a side of the second set of DBR layers. In some cases, the HCG mirror element has a first reflection coefficient that is greater than a second reflection coefficient of the second set of DBR layers. Another optoelectronic device may include a photonic crystal (PhC) mirror layer and a gain region disposed between the PhC mirror layer and a set of DBR layers.

公开(公告)号：US12068575B2

公开(公告)日：2024-08-20

申请号：US17241584

申请日：2021-04-27

Applicant: PHOSERTEK CORPORATION

Inventor： Yu-Chen Chen ,  Chien-Hung Lin ,  Bo-Tsun Chou ,  Chih-Yuan Weng ,  Kuo-Jui Lin

IPC: H01S5/026 ,  H01S5/042 ,  H01S5/11 ,  H01S5/183 ,  H01S5/343

CPC classification number: H01S5/026 ,  H01S5/04256 ,  H01S5/11 ,  H01S5/18361 ,  H01S5/343

Abstract: A laser device includes a substrate, a first waveguiding layer, an active layer, a second waveguiding layer, a contact layer, an insulating layer, a light-transmissive conducting layer, a first electrode, and a second electrode. The first waveguiding layer, the active layer, the second waveguiding layer, and the contact layer form an epitaxy structure having a first platform and a second platform. The first platform has multiple holes to form a photonic crystal structure. The insulating layer is over an upper surface and a sidewall surface of the first platform, and over an upper surface of the second platform. The sidewall surface passes through the contact layer, the second waveguiding layer, and the active layer. The light-transmissive conducting layer connects to the photonic crystal structure through an aperture of the insulating layer. The first electrode has an opening corresponding to the aperture. The second electrode is under the substrate.

公开(公告)号：US12057677B2

公开(公告)日：2024-08-06

申请号：US17138907

申请日：2020-12-31

Applicant: FUJIFILM Business Innovation Corp.

Inventor： Daisuke Iguchi

IPC: H01S5/042 ,  G06V20/64 ,  G06V40/16 ,  H01L31/12 ,  H01S5/02345 ,  H01S5/024 ,  H01S5/183 ,  H01S5/343 ,  H01S5/42

CPC classification number: H01S5/0428 ,  G06V20/64 ,  G06V40/166 ,  H01L31/12 ,  H01S5/02345 ,  H01S5/02469 ,  H01S5/18311 ,  H01S5/18361 ,  H01S5/34313 ,  H01S5/423

Abstract: A light-emitting device includes an insulating base member having thermal conductivity of 10 W/m·K or more; a light-emitting element provided on a front surface side of the base member; a first rear surface wire that is provided on a rear surface side of the base member and is connected to one of a cathode electrode and an anode electrode of the light-emitting element; a second rear surface wire that is provided on the rear surface side of the base member and is connected to the other one of the cathode electrode and the anode electrode; and a reference potential wire that is provided on the rear surface side of the base member and is connected to an external reference potential.

公开(公告)号：US12057675B1

公开(公告)日：2024-08-06

申请号：US18501534

申请日：2023-11-03

Applicant: DeUVe Photonics, Inc.

Inventor： Chris Hessenius ,  Mahmoud Fallahi

IPC: H01S5/00 ,  H01S5/0225 ,  H01S5/042 ,  H01S5/183 ,  H01S5/42

CPC classification number: H01S5/005 ,  H01S5/0225 ,  H01S5/0421 ,  H01S5/18361 ,  H01S5/423

Abstract: An electrical pumping vertical external-cavity surface-emitting laser (EP-VECSEL) device. The device may comprise a bottom contact, a first distributed Bragg reflector (DBR) disposed on the bottom contact, and an active region comprising a plurality of emitters, disposed on the first DBR configured to accept an electrical current at multiple emitters on the active region such that the multiple emitters produce a plurality of lasers. The multiple emitters may be configured to form a desired Hermite Gaussian (HG) mode shape. The device may further comprise a second DBR disposed on the active region and a top contact disposed on the second DBR. The top contact may be shaped such that the plurality of lasers are directed through the top contact. The device may further comprise an array output coupler disposed optically in line with the top contact such that the plurality of lasers are directed into the array output coupler.

公开(公告)号：US20240243551A1

公开(公告)日：2024-07-18

申请号：US18412144

申请日：2024-01-12

Applicant: BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM

Inventor： Weidong Zhou ,  Mingsen Pan

IPC: H01S5/183 ,  H01S5/11 ,  H01S5/343

CPC classification number: H01S5/18319 ,  H01S5/11 ,  H01S5/18361 ,  H01S5/3432

Abstract: An apparatus for a photonic crystal surface emitting laser (PCSEL) device includes a PC cavity comprising a photonic crystal (PC) lattice comprising first nanoholes in a core region of the PC cavity, a plurality of lateral distributed Bragg reflector gratings (DBRs) that are truncated around the PC lattice, and opening regions between adjacent and truncated lateral DBRs around the PC lattice. The PCSEL devise also includes a multiple quantum well (MQW) layer coupled to the PC cavity in a vertical direction. The PCSEL device is configured to emit light in the vertical direction.

公开(公告)号：US20240146026A1

公开(公告)日：2024-05-02

申请号：US18278269

申请日：2022-01-21

Applicant: SONY GROUP CORPORATION

Inventor： Mikihiro YOKOZEKI ,  Hiroshi NAKAJIMA ,  Tomomasa WATANABE ,  Michinori SHIOMI

IPC: H01S5/183

CPC classification number: H01S5/18347 ,  H01S5/18341 ,  H01S5/18361

Abstract: The present technology provides a surface emitting laser capable of improving flatness of a surface of a buried layer while reducing diffraction loss of light in the buried layer.
The surface emitting laser according to present technology includes a first structure including a first multilayer film reflector, a second structure including a second multilayer film reflector, and a resonator disposed between the first and second structures, in which the resonator includes an active layer, a tunnel junction layer disposed between the first structure and the active layer and having a mesa and an adjacent region adjacent to the mesa, and a buried layer that buries a periphery of the mesa and a periphery of the adjacent region, and an interval between the mesa and the adjacent region is less than or equal to 30 μm.