Abstract:
The present invention provides an etching solution for etching a piezoelectric film having a thin film of a perovskite structure grown to be a columnar structure on a lower electrode formed on a substrate and having a pyrochlore layer at an interface thereof with the lower electrode, wherein the etching solution comprises at least: a hydrofluoric acid type chemical comprising at least any of buffered hydrofluoric acid (BHF), hydrogen fluoride (HF), and diluted hydrofluoric acid (DHF); and nitric acid, and has a concentration by weight of hydrochloric acid of less than 10% and a weight ratio of hydrochloric acid to nitric acid (hydrochloric acid/nitric acid) of 1/4 or less. The present invention also provides a method of manufacturing a piezoelectric element to carry out etching using the etching solution.
Abstract:
There is provided a piezoelectric laminate including, in the following order, a lower electrode layer and a piezoelectric film containing a Pb-containing perovskite-type oxide, in which the piezoelectric film contains an oxygen atom 18O having a mass number of 18 in oxygen as a constituent element in excess of a natural abundance ratio. There are also provided a piezoelectric laminate, a piezoelectric element, and a manufacturing method for a piezoelectric laminate.
Abstract:
In a method for etching a piezoelectric film and a manufacturing method thereof, a piezoelectric film is formed on a substrate on which a lower electrode is formed, a metal film having a thickness of 20 nm to 300 nm is formed, a patterned resist film is formed, the metal film is etched with a first etchant to which the piezoelectric film has etching resistance, and the piezoelectric film is etched with a second etchant to which the metal film has etching resistance.
Abstract:
A piezoelectric device includes: a substrate; a lower electrode provided on a substrate; a piezoelectric film provided by being laminated on the lower electrode, the piezoelectric film being formed of lead zirconate titanate (PZT) containing 6 at % or more in atomic composition percentage of at least one type of metal element selected from V group and VI group; an oxide electrode layer provided by being laminated on the piezoelectric film; a first metal electrode layer containing an oxidation-resistant precious metal provided by being laminated on the oxide electrode layer; a second metal electrode layer provided by being laminated on the first metal electrode layer; and a wire connected to the second metal electrode layer.